lcd panel with transistors on the back brands

A thin-film-transistor liquid-crystal display (TFT LCD) is a variant of a liquid-crystal display that uses thin-film-transistor technologyactive matrix LCD, in contrast to passive matrix LCDs or simple, direct-driven (i.e. with segments directly connected to electronics outside the LCD) LCDs with a few segments.

In February 1957, John Wallmark of RCA filed a patent for a thin film MOSFET. Paul K. Weimer, also of RCA implemented Wallmark"s ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET. It was made with thin films of cadmium selenide and cadmium sulfide. The idea of a TFT-based liquid-crystal display (LCD) was conceived by Bernard Lechner of RCA Laboratories in 1968. In 1971, Lechner, F. J. Marlowe, E. O. Nester and J. Tults demonstrated a 2-by-18 matrix display driven by a hybrid circuit using the dynamic scattering mode of LCDs.T. Peter Brody, J. A. Asars and G. D. Dixon at Westinghouse Research Laboratories developed a CdSe (cadmium selenide) TFT, which they used to demonstrate the first CdSe thin-film-transistor liquid-crystal display (TFT LCD).active-matrix liquid-crystal display (AM LCD) using CdSe TFTs in 1974, and then Brody coined the term "active matrix" in 1975.high-resolution and high-quality electronic visual display devices use TFT-based active matrix displays.

The liquid crystal displays used in calculators and other devices with similarly simple displays have direct-driven image elements, and therefore a voltage can be easily applied across just one segment of these types of displays without interfering with the other segments. This would be impractical for a large display, because it would have a large number of (color) picture elements (pixels), and thus it would require millions of connections, both top and bottom for each one of the three colors (red, green and blue) of every pixel. To avoid this issue, the pixels are addressed in rows and columns, reducing the connection count from millions down to thousands. The column and row wires attach to transistor switches, one for each pixel. The one-way current passing characteristic of the transistor prevents the charge that is being applied to each pixel from being drained between refreshes to a display"s image. Each pixel is a small capacitor with a layer of insulating liquid crystal sandwiched between transparent conductive ITO layers.

The circuit layout process of a TFT-LCD is very similar to that of semiconductor products. However, rather than fabricating the transistors from silicon, that is formed into a crystalline silicon wafer, they are made from a thin film of amorphous silicon that is deposited on a glass panel. The silicon layer for TFT-LCDs is typically deposited using the PECVD process.

Polycrystalline silicon is sometimes used in displays requiring higher TFT performance. Examples include small high-resolution displays such as those found in projectors or viewfinders. Amorphous silicon-based TFTs are by far the most common, due to their lower production cost, whereas polycrystalline silicon TFTs are more costly and much more difficult to produce.

The twisted nematic display is one of the oldest and frequently cheapest kind of LCD display technologies available. TN displays benefit from fast pixel response times and less smearing than other LCD display technology, but suffer from poor color reproduction and limited viewing angles, especially in the vertical direction. Colors will shift, potentially to the point of completely inverting, when viewed at an angle that is not perpendicular to the display. Modern, high end consumer products have developed methods to overcome the technology"s shortcomings, such as RTC (Response Time Compensation / Overdrive) technologies. Modern TN displays can look significantly better than older TN displays from decades earlier, but overall TN has inferior viewing angles and poor color in comparison to other technology.

Most TN panels can represent colors using only six bits per RGB channel, or 18 bit in total, and are unable to display the 16.7 million color shades (24-bit truecolor) that are available using 24-bit color. Instead, these panels display interpolated 24-bit color using a dithering method that combines adjacent pixels to simulate the desired shade. They can also use a form of temporal dithering called Frame Rate Control (FRC), which cycles between different shades with each new frame to simulate an intermediate shade. Such 18 bit panels with dithering are sometimes advertised as having "16.2 million colors". These color simulation methods are noticeable to many people and highly bothersome to some.gamut (often referred to as a percentage of the NTSC 1953 color gamut) are also due to backlighting technology. It is not uncommon for older displays to range from 10% to 26% of the NTSC color gamut, whereas other kind of displays, utilizing more complicated CCFL or LED phosphor formulations or RGB LED backlights, may extend past 100% of the NTSC color gamut, a difference quite perceivable by the human eye.

The transmittance of a pixel of an LCD panel typically does not change linearly with the applied voltage,sRGB standard for computer monitors requires a specific nonlinear dependence of the amount of emitted light as a function of the RGB value.

In-plane switching was developed by Hitachi Ltd. in 1996 to improve on the poor viewing angle and the poor color reproduction of TN panels at that time.

Initial iterations of IPS technology were characterised by slow response time and a low contrast ratio but later revisions have made marked improvements to these shortcomings. Because of its wide viewing angle and accurate color reproduction (with almost no off-angle color shift), IPS is widely employed in high-end monitors aimed at professional graphic artists, although with the recent fall in price it has been seen in the mainstream market as well. IPS technology was sold to Panasonic by Hitachi.

Most panels also support true 8-bit per channel color. These improvements came at the cost of a higher response time, initially about 50 ms. IPS panels were also extremely expensive.

IPS has since been superseded by S-IPS (Super-IPS, Hitachi Ltd. in 1998), which has all the benefits of IPS technology with the addition of improved pixel refresh timing.

In 2004, Hydis Technologies Co., Ltd licensed its AFFS patent to Japan"s Hitachi Displays. Hitachi is using AFFS to manufacture high end panels in their product line. In 2006, Hydis also licensed its AFFS to Sanyo Epson Imaging Devices Corporation.

It achieved pixel response which was fast for its time, wide viewing angles, and high contrast at the cost of brightness and color reproduction.Response Time Compensation) technologies.

Less expensive PVA panels often use dithering and FRC, whereas super-PVA (S-PVA) panels all use at least 8 bits per color component and do not use color simulation methods.BRAVIA LCD TVs offer 10-bit and xvYCC color support, for example, the Bravia X4500 series. S-PVA also offers fast response times using modern RTC technologies.

When the field is on, the liquid crystal molecules start to tilt towards the center of the sub-pixels because of the electric field; as a result, a continuous pinwheel alignment (CPA) is formed; the azimuthal angle rotates 360 degrees continuously resulting in an excellent viewing angle. The ASV mode is also called CPA mode.

A technology developed by Samsung is Super PLS, which bears similarities to IPS panels, has wider viewing angles, better image quality, increased brightness, and lower production costs. PLS technology debuted in the PC display market with the release of the Samsung S27A850 and S24A850 monitors in September 2011.

TFT dual-transistor pixel or cell technology is a reflective-display technology for use in very-low-power-consumption applications such as electronic shelf labels (ESL), digital watches, or metering. DTP involves adding a secondary transistor gate in the single TFT cell to maintain the display of a pixel during a period of 1s without loss of image or without degrading the TFT transistors over time. By slowing the refresh rate of the standard frequency from 60 Hz to 1 Hz, DTP claims to increase the power efficiency by multiple orders of magnitude.

Due to the very high cost of building TFT factories, there are few major OEM panel vendors for large display panels. The glass panel suppliers are as follows:

External consumer display devices like a TFT LCD feature one or more analog VGA, DVI, HDMI, or DisplayPort interface, with many featuring a selection of these interfaces. Inside external display devices there is a controller board that will convert the video signal using color mapping and image scaling usually employing the discrete cosine transform (DCT) in order to convert any video source like CVBS, VGA, DVI, HDMI, etc. into digital RGB at the native resolution of the display panel. In a laptop the graphics chip will directly produce a signal suitable for connection to the built-in TFT display. A control mechanism for the backlight is usually included on the same controller board.

The low level interface of STN, DSTN, or TFT display panels use either single ended TTL 5 V signal for older displays or TTL 3.3 V for slightly newer displays that transmits the pixel clock, horizontal sync, vertical sync, digital red, digital green, digital blue in parallel. Some models (for example the AT070TN92) also feature input/display enable, horizontal scan direction and vertical scan direction signals.

New and large (>15") TFT displays often use LVDS signaling that transmits the same contents as the parallel interface (Hsync, Vsync, RGB) but will put control and RGB bits into a number of serial transmission lines synchronized to a clock whose rate is equal to the pixel rate. LVDS transmits seven bits per clock per data line, with six bits being data and one bit used to signal if the other six bits need to be inverted in order to maintain DC balance. Low-cost TFT displays often have three data lines and therefore only directly support 18 bits per pixel. Upscale displays have four or five data lines to support 24 bits per pixel (truecolor) or 30 bits per pixel respectively. Panel manufacturers are slowly replacing LVDS with Internal DisplayPort and Embedded DisplayPort, which allow sixfold reduction of the number of differential pairs.

Backlight intensity is usually controlled by varying a few volts DC, or generating a PWM signal, or adjusting a potentiometer or simply fixed. This in turn controls a high-voltage (1.3 kV) DC-AC inverter or a matrix of LEDs. The method to control the intensity of LED is to pulse them with PWM which can be source of harmonic flicker.

The bare display panel will only accept a digital video signal at the resolution determined by the panel pixel matrix designed at manufacture. Some screen panels will ignore the LSB bits of the color information to present a consistent interface (8 bit -> 6 bit/color x3).

With analogue signals like VGA, the display controller also needs to perform a high speed analog to digital conversion. With digital input signals like DVI or HDMI some simple reordering of the bits is needed before feeding it to the rescaler if the input resolution doesn"t match the display panel resolution.

The statements are applicable to Merck KGaA as well as its competitors JNC Corporation (formerly Chisso Corporation) and DIC (formerly Dainippon Ink & Chemicals). All three manufacturers have agreed not to introduce any acutely toxic or mutagenic liquid crystals to the market. They cover more than 90 percent of the global liquid crystal market. The remaining market share of liquid crystals, produced primarily in China, consists of older, patent-free substances from the three leading world producers and have already been tested for toxicity by them. As a result, they can also be considered non-toxic.

Kawamoto, H. (2012). "The Inventors of TFT Active-Matrix LCD Receive the 2011 IEEE Nishizawa Medal". Journal of Display Technology. 8 (1): 3–4. Bibcode:2012JDisT...8....3K. doi:10.1109/JDT.2011.2177740. ISSN 1551-319X.

Brody, T. Peter; Asars, J. A.; Dixon, G. D. (November 1973). "A 6 × 6 inch 20 lines-per-inch liquid-crystal display panel". 20 (11): 995–1001. Bibcode:1973ITED...20..995B. doi:10.1109/T-ED.1973.17780. ISSN 0018-9383.

Richard Ahrons (2012). "Industrial Research in Microcircuitry at RCA: The Early Years, 1953–1963". 12 (1). IEEE Annals of the History of Computing: 60–73. Cite journal requires |journal= (help)

K. H. Lee; H. Y. Kim; K. H. Park; S. J. Jang; I. C. Park & J. Y. Lee (June 2006). "A Novel Outdoor Readability of Portable TFT-LCD with AFFS Technology". SID Symposium Digest of Technical Papers. AIP. 37 (1): 1079–82. doi:10.1889/1.2433159. S2CID 129569963.

Kim, Sae-Bom; Kim, Woong-Ki; Chounlamany, Vanseng; Seo, Jaehwan; Yoo, Jisu; Jo, Hun-Je; Jung, Jinho (15 August 2012). "Identification of multi-level toxicity of liquid crystal display wastewater toward Daphnia magna and Moina macrocopa". Journal of Hazardous Materials. Seoul, Korea; Laos, Lao. 227–228: 327–333. doi:10.1016/j.jhazmat.2012.05.059. PMID 22677053.

Let us start with the basics first; refresh the knowledge about TN and LCD displays in general, later we will talk about TFTs (Thin Film Transistors), how they differ from regular monochrome LCD displays. Then we will go on to the ghosting effect, so we will not only discuss the technology behind the construction of the TFT, but also some phenomena, like the ghosting effect, or grayscale inversion, that are important to understand when using an LCD TFT display.

Next, we will look at different technologies of the TFT LCD displays like TN, IPS, VA, and of course about transmissive and transflective LCD displays, because TFT displays also can be transmissive and transflective. In the last part we will talk about backlight.

Let us start with a short review of the most basic liquid crystal cell, which is the TN (twisted nematic) display. On the picture above, we can see that the light can be transmit through the cell or blocked by the liquid crystal cell using voltage. If you want to learn more about monochrome LCD displays and the basics of LCD displays, follow this link.

What is a TFT LCD display and how it is different from a monochrome LCD display? TFT is called an active display. Active, means we have one or more transistors in every cell, in every pixel and in every subpixel. TFT stands for Thin Film Transistor, transistors that are very small and very thin and are built into the pixel, so they are not somewhere outside in a controller, but they are in the pixel itself. For example, in a 55-inch TV set, the TFT display contains millions of transistors in the pixels. We do not see them, because they are very small and hidden, if we zoom in, however, we can see them in every corner of each pixel, like on the picture below.

On the picture above we can see subpixels, that are basic RGB (Red, Green, Blue) colors and a black part, with the transistors and electronic circuits. We just need to know that we have pixels, and subpixels, and each subpixel has transistors. This makes the display active, and thus is called  the TFT display. TFT displays are usually color displays, but there are also monochrome TFT displays, that are active, and have transistors, but have no colors. The colors in the TFT LCD display are typically added by color filters on each subpixel. Usually the filters are RGB, but we also have RGBW (Red, Green, Blue, White) LCD displays with added subpixels without the filter (White) to make the display brighter.

What is interesting, the white part of the RGB and RGBW screen will look exactly the same from a distance, because the lights are mixed and generate white light, but when we come closer to the screen, we will not see white light at all.

Going a little bit deeper, into the TFT cell, there is a part inside well known to us from the monochrome LCD display Riverdi University lecture. We have a cell, liquid crystal, polarizers, an ITO (Indium Tin Oxide) layer for the electrodes, and additionally an electronic circuit. Usually, the electronic circuit consists of one transistor and some capacitors to sustain the pixel state when we switch the pixel OFF and ON. In a TFT LCD display the pixels are much more complicated because apart from building the liquid crystal part, we also need to build an electronic part.

That is why TFT LCD display technologies are very expensive to manufacture. If you are familiar with electronics, you know that the transistor is a kind of switch, and it allows us to switch the pixel ON and OFF. Because it is built into the pixel itself, it can be done very quickly and be very well controlled. We can control the exact state of every pixel not only the ON and OFF states, but also all the states in between. We can switch the light of the cells ON and OFF in several steps. Usually for TFT LCD displays it will be 8-bit steps per color, so we have 256 steps of brightness for every color, and every subpixel. Because we have three subpixels, we have a 24-bit color range, that means over 16 million combinations, we can, at least theoretically, show on our TFT LCD display over 16 million distinct colors using RGB pixels.

Now that we know how the TFT LCD display works, we can now learn some practical things one of which is LCD TFT ghosting. We know how the image is created, but what happens when we have the image on the screen for a prolonged time, and how to prevent it. In LCD displays we have something called LCD ghosting. We do not see it very often, but in some displays this phenomenon still exists.

If some elements of the picture i.e., your company logo is in the same place of the screen for a long period of time, for couple of weeks, months or a year, the crystals will memorize the state and later, when we change the image, we may see some ghosting of those elements. It really depends on many conditions like temperature and even the screen image that we display on the screen for longer periods of time. When you build your application, you can use some techniques to avoid it, like very rapid contrast change and of course to avoid the positioning the same image in the same position for a longer time.

You may have seen this phenomenon already as it is common in every display technology, and even companies like Apple put information on their websites, that users may encounter this phenomenon and how to fix it. It is called image ghosting or image persistence, and even Retina displays are not free of it.

Another issue present in TFT displays, especially TN LCD displays, is grayscale inversion. This is a phenomenon that changes the colors of the screen according to the viewing angle, and it is only one-sided. When buying a TFT LCD display, first we need to check what kind of technology it is. If it is an IPS display, like the Riverdi IPS display line, then we do not need to worry about the grayscale inversion because all the viewing angles will be the same and all of them will be very high, like 80, 85, or 89 degrees. But if you buy a more common or older display technology type, like the TN (twisted nematic) display, you need to think where it will be used, because one viewing angle will be out. It may be sometimes confusing, and you need to be careful as most factories define viewing direction of the screen and mistake this with the greyscale inversion side.

On the picture above, you can see further explanation of the grayscale inversion from Wikipedia. It says that some early panels and also nowadays TN displays, have grayscale inversion not necessary up-down, but it can be any angle, you need to check in the datasheet. The reason technologies like IPS (In-Plane Switching), used in the latest Riverdi displays, or VA, were developed, was to avoid this phenomenon. Also, we do not want to brag, but the Wikipedia definition references our website.

We know already that TN (twisted nematic) displays, suffer from grayscale inversion, which means the display has one viewing side, where the image color suddenly changes. It is tricky, and you need to be careful. On the picture above there is a part of the LCD TFT specification of a TN (twisted nematic) display, that has grayscale inversion, and if we go to this table, we can see the viewing angles. They are defined at 70, 70, 60 and 70 degrees, that is the maximum viewing angle, at which the user can see the image. Normally we may think that 70 degrees is better, so we will choose left and right side to be 70 degrees, and then up and down, and if we do not know the grayscale inversion phenomena, we may put our user on the bottom side which is also 70 degrees. The viewing direction will be then like a 6 o’clock direction, so we call it a 6 o’clock display. But you need to be careful! Looking at the specification, we can see that this display was defined as a 12 o’clock display, so it is best for it to be seen from a 12 o’clock direction. But we can find that the 12 o’clock has a lower viewing angle – 60 degrees. What does it mean? It means that on this side there will be no grayscale inversion. If we go to 40, 50, 60 degrees and even a little bit more, probably we will still see the image properly. Maybe with lower contrast, but the colors will not change. If we go from the bottom, from a 6 o’clock direction where we have the grayscale inversion, after 70 degrees or lower we will see a sudden color change, and of course this is something we want to avoid.

To summarize, when you buy older technology like TN and displays, which are still very popular, and Riverdi is selling them as well, you need to be careful where you put your display. If it is a handheld device, you will see the display from the bottom, but if you put it on a wall, you will see the display from the top, so you need to define it during the design phase, because later it is usually impossible or expensive to change the direction.

We will talk now about the other TFT technologies, that allow us to have wider viewing angles and more vivid colors. The most basic technology for monochrome and TFT LCD displays is twisted nematic (TN). As we already know, this kind of displays have a problem with grayscale inversion. On one side we have a higher retardation and will not get a clear image. That is why we have other technologies like VA (Vertical Alignment), where the liquid crystal is differently organized, and another variation of the TFT technology – IPS which is In-Plane Switching. The VA and IPS LCD displays do not have a problem with the viewing angles, you can see a clear image from all sides.

Nowadays all TV sets, tablets and of course mobile phones are IPS or VA. You can turn them around and see the image clear from all sides. But, for monitor applications the TN technology is still widely used, because the monitor usually is in front of you and most of the time you look directly at it, from top, left or right side, but very rarely from the bottom, so the grayscale inversion viewing angle can be placed there. This technology still is very practical because it is affordable and has some advantages for gamers because it is very fast.

Apart from the different organization of the liquid crystals, we also organize subpixels a little bit differently in a VA and IPS LCD displays. When we look closer at the TN display, we will just see the subpixels with color filters. If we look at the VA or IPS display they will have subpixels of subpixels. The subpixels are divided into smaller parts. In this way we can achieve even wider viewing angles and better colors for the user, but of course, it is more complicated and more expensive to do.

The picture above presents the TN display and grayscale inversion. For IPS or VA technology there is no such effect. The picture will be the same from all the sides we look so these technologies are popular where we need wide viewing angles, and TN is popular where we don’t need that, like in monitors. Other advantages of IPS LCD displays are they give accurate colors, and wide viewing angles. What is also important in practice, in our projects, is that the IPS LCD displays are less susceptible to mechanical force. When we apply mechanical force to the screen, and have an optically bonded touch screen, we push the display as well as squeeze the cells. When we have a TN display, every push on the cell changes the image suddenly, with the IPS LCD displays with in-plane switching, different liquid crystals organization, this effect is lesser. It is not completely removed but it is much less distinct. That is another reason IPS displays are very popular for smartphones, tablets, when we have the touchscreens usually optically bonded.

If we wanted to talk about disadvantages, there is a question mark over it, as some of them may be true, some of them do not rely on real cases, what kind of display, what kind of technology is it. Sometimes the IPS displays can have higher power consumption than others, in many cases however, not. They can be more expensive, but not necessarily. The new IPS panels can cost like TN panels, but IPS panels definitely have a longer response time. Again, it is not a rule, you can make IPS panels that are very fast, faster than TN panels, but if you want the fastest possible display, probably the TN panel will be the fastest. That is why the TN technology is still popular on the gaming market. Of course, you can find a lot of discussions on the internet, which technology is better, but it really depends on what you want to achieve.

Now, let us look at the backlight types. As we see here, on the picture above, we have four distinct types of backlight possible. The most common, 95 or 99 per cent of the TFT LCD displays on the market are the transmissive LCD display type, where we need the backlight from the back. If you remember from our Monochrome LCD Displays lecture, for transmissive LCD displays you need the backlight to be always on. If you switch the backlight off, you will not see anything. The same as for monochrome LCD displays, but less popular for TFT displays, we have the transflective LCD display type. They are not popular because usually for transflective TFT displays, the colors lack in brightness, and the displays are not very practical to use. You can see the screen, but the application is limited. Some transflective LCD displays are used by military, in applications where power consumption is paramount; where you can switch the backlight off and you agree to have lower image quality but still see the image. Power consumption and saving energy is most important in some kind of applications and you can use transflective LCD displays there. The reflective type of LCD displays are almost never used in TFT. There is one technology called Low Power Reflective Displays (LPRD) that is used in TFT but it is not popular. Lastly, we have a variation of reflective displays with frontlight, where we add frontlight to the reflective display and have the image even without external light.

Just a few words about Low Power Reflective Displays (LPRD). This kind of display uses environmental light, ambient light to reflect, and produce some colors. The colors are not perfect, not perfectly clear, but this technology is becoming increasingly popular because it allows to have color displays in battery powered applications. For example, a smartwatch would be a case for that technology, or an electrical bike or scooter, where we can not only have a standard monochrome LCD display but also a TFT LCD color display without the backlight; we can see the image even in

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strong sunlight and not need backlight at all. So, this kind of TFL LCD display technology is getting more and more popular when we have outdoor LCD displays and need a low power consumption.

On the picture above, we have some examples of how transmissive and reflective LCD displays work in the sunlight. If we have a simple image, like a black and white pattern, then on a transmissive LCD display, even with 1000 candela brightness, the image probably will be lower quality than for a reflective LCD display; if we have sunlight, we have very strong light reflections on the surface of the screen. We have talked about contrast in more detail in the lecture Sunlight Readable Displays. So, reflective LCD displays are a better solution for outdoor applications than transmissive LCD displays, where you need a really strong backlight, 1000 candela or more, to be really seen outdoors.

To show you how the backlight of LCD displays is built, we took the picture above. You can see the edge backlight there, where we have LEDs here on the small PCB on the edge, and we have a diffuser that distributes the light to the whole surface of LCD screen.

In addition to the backlight, we have something that is called a frontlight. It is similar to backlight, it also uses the LEDs to put the light into it, but the frontlight needs to be transparent as we have the display behind. On the example on the picture above we can see an e-paper display. The e-paper display is also a TFT display variation, but it is not LCD (liquid crystal), it is a different technology, but the back of the display is the same and it is reflective. The example you see is the Kindle 4 eBook reader. It uses an e-paper display and a frontlight as well, so you can read eBooks even during the night.

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Figures 3a–d show optical and SEM (scanning electron microscopy) images of the fabricated CL and CLSE pixel structures. Each structure has the same pixel size (80 μm × 240 μm) and minimum pattern size (5 μm). As shown in Fig. 3d, the white line patterns are the ITO interdigitated pixel and common electrodes. They are well connected to the source electrode and gate line via through holes, and the common electrodes at both ends cover the underlying data lines to prevent electrical noise from being applied to the LC layer. As will be shown later, this noise shield electrode (SE) is what makes the black matrix above the data line unnecessary

Optical and SEM (scanning electron microscopy) images of fabricated (a, b) CL and (c, d) CLSE pixel structures. The five white line patterns in (d) are the ITO interdigitated pixel and common electrodes. (e) Images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel. (f) The three-black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM) and (g) optical images of pixels without BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines).

Figure 3e shows images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel fabricated in our laboratory, (f) the three black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM), and (g) optical images of panel areas without the BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines). As can be seen in the image from the normal direction, the brightness and contrast of the display area with the top BM and middle BM patterns are almost the same, but the contrast of the display area without the BM is relatively lower because of the lower darkness level of the LC off pixels indicating “HITACHI”. As shown in Fig. 3g, this is due to light leaking through the aperture between the data line and adjacent common lines. Therefore, in the CL structure, the BM on the drain line is necessary to obtain a high contrast ratio by shielding light leakage. This is the same as in the conventional structure. On the contrary, there is no light leakage along the gate line through the gaps between the gate line and edges of the pixel/common electrodes, as is clearly shown in Fig. 3g. This is a unique advantage of the CL structure because the conventional structure must shield these gaps with the BM to prevent light leakage. The suppression of light leakage along the gate line in the CL structure is due to the driving scheme (see Fig. 2b,a for a comparison with the conventional structure). During the holding period (tOFF) in the conventional structure, regardless of the pixel voltage, Vp (including Vp = 0), nonzero Vgp and Vgc are always applied to keep the TFT off, and these voltages are applied to the LC layer, inducing light leakage as reported in

Figure 4a shows the gate voltage (Vg) dependence of the panel brightness, while the inset shows that of the TFT current (transfer characteristics). The gray curves are for the conventional IPS TFT-LCD with the TFT before enhancement, the common line, and the matrix BM (MBM) shown at the top of Fig. 3f. The blue curves are for the proposed CL structure with the enhanced TFT and the stripe BM (SBM) shown in the middle of Fig. 3f. In this case, enhanced TFT characteristics were obtained by using an MNOS TFT without back-channel oxidation that was enhanced by the BTS process. In both structures, the threshold voltages for panel brightness, defined by extrapolating the straight part of the brightness curves, reflect those of the TFT transfer curves defined as Vg at a drain current of 10−12 A, and they are well matched to be 4 V and 9 V, respectively. The maximum brightness for the CL structure is 137% higher than that for the conventional structure, which is due to the increase in the aperture ratio from 38 to 52% that results from the elimination of the common line and the BM covering the gate line.

(a) Dependence of panel brightness and TFT current on gate voltage for the conventional pixel structure of 38% aperture ratio (AR) with matrix black matrix (MBM) over both drain and gate lines and proposed CL pixel structure of 52% AR with strip black matrix (SBM) over only the drain lines. Transfer characteristics before and after bias temperature stress (BTS) treatment are shown in the inset. (b) Charging and (c) holding characteristics of enhanced TFT of the CL structure with gate as a common line. Vg and Vd in the TFT ON state are 30 V and +/−7 V, respectively.

To estimate the charging and holding characteristics of the MNOS-enhanced TFT in the panel, the gate TFT ON and OFF time dependences of the panel brightness were measured (Fig. 4b,c). The charging characteristics in Fig. 4b are plotted as a function of tON at tOFF = 16.6 ms, Vg = 30 V, and Vd = ± 7 V. The holding characteristics in Fig. 4c are plotted as a function of tOFF at tON = 34 μs. 95.1% charging at tON = 34 μs and 95.3% holding at tOFF = 16.6 ms indicate that the enhanced TFT has sufficient charging and holding performance to drive a standard VGA (640 × 480 pixels) panel (the number of scanning lines is estimated as tOFF/tON = 16.6/0.034 = 488).

To confirm the driving conditions for the CL structure without the BM along the gate line (with the SBM), the tOFF dependence of the contrast ratio (CR) in the CL panel was further investigated as shown in Fig. 5a, where CR is plotted as a function of tOFF for the CL panels with the matrix BM (MBM) and the strip BM (SBM). The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. The SBM and MBM panels keep CR higher than 240 with tOFF > 16.6 ms, the frame period of a display panel without flicker being noticeable to the human eye. both panels decrease CR when tOFF is less than 16.6 ms; the CR of the SBM panel decreases faster than the CR of the MBM panel. As shown in the inset, the decrease in CR was due to the increase in dark-state brightness with decreasing tOFF as light leakage increases along the gate line. This light leakage is induced by the voltage Vgp = Vgc = VgON = 30 V applied only for 34 μs during the TFT ON (charging) state, which is 1/488th the duration, tOFF = 16.6 ms, of the TFT OFF (holding) state with Vgp = Vgc = VgOFF = 0 V, but the ratio increases with decreasing tOFF and becomes effective enough to switch on LC layer and induce light leakage. However, it should be stressed again that the CL panel with the normal holding (TFT OFF) time of 16.6 ms does not suffer from the light leakage along the gate line, so the aperture ratio can be increased by removing the BM along the gate line.

(a) Contrast ratio (CR) for CL panels with matrix BM (MBM) and stripe BM (SBM) plotted as a function of tOFF. The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. Vd (= VLC) dependence of (b) brightness and (c) contrast ratio of the CLSE panel. Insets of (b): optical images indicating the elimination of the BM from the CLSE structure (upper left) and the MBM in the conventional structure (lower right). Insets of (c): CLSE panel composed of different areas with three different pixel structures and aperture ratios (ARs), i.e., CLSE structure without BM (60%), CL structure with SBM (52%), and conventional structure with MBM (38%).

Figure 5b,c shows the Vd (= VLC) dependence of the brightness and contrast ratio of the CLSE panel without a BM along the drain line and along the gate line. As shown in the optical images in the insets of Fig. 5c, the CLSE panel has different areas with three different pixel structures and aperture ratios (ARs), i.e., the CLSE structure without the BM (60%), the CL structure with the SBM (52%), and the conventional structure with the MBM (38%). The optical images in the inset of Fig. 5b clearly indicate the elimination of the BM from the CLSE structure and the MBM in the conventional structure. The ratios of the bright area in the CLSE and conventional pixels shown in the red dotted square appear higher than the aperture ratios because the pixel and common electrodes are invisible due to the brightness. The brightness and contrast ratio in each area increase with increasing Vd; the ratios for the CLSE structure without the BM are approximately 160% those of the conventional structure with the MBM, reflecting the difference in aperture ratio.

Figure 6 indicates the effect of bias temperature stress (BTS) on the TFT characteristics. As the stressing time, tS, of the positive gate stress voltage, Vst =  + 77 V, increases from 0 to 3600 s, the transfer (Id-Vg) curve shifts in the positive direction (Fig. 6a). Vth is defined as Vg at which Id = 10−12 A and ΔVth is defined as the Vth shift from the initial value via BTS. As shown in Fig. 6b, ΔVth increases logarithmically with increasing tS: ΔVth = 2.17 + 4.93 × log (tS). The mechanism behind the gate-stress-induced Vth shift is electron tunnel injection from the a-Si:H semiconductor into the SiOx gate insulator. For confirmation, ΔVth of MNOS TFTs with different SiOx thicknesses is plotted as a function of the electric field applied to the SiOx layer in Fig. 6c. Here, the thickness of the SiOx was varied (5, 10, 20, 50 nm), while the SiN thickness was fixed at 200 nm. The electric field applied to SiOx, Eox, was calculated using the following equation,

Effect of bias temperature stress (BTS) on TFT characteristics. (a) The transfer (Id–Vg) curve shifts in the positive direction with positive gate bias stress of Vst =  + 77 V over the duration of 0–3600 s. (b) ΔVth, defined as the Vth shift from the initial value via BTS, increases logarithmically with increasing tS, following ΔVth = 2.17 + 4.93 × log (tS). (c) ΔVth of MNOS TFTs with different SiOx thicknesses from 5 to 50 nm as a function of the electric field applied to the SiOx layer.

where εo = 3.5 and do are the electrical permittivity and thicknesses of SiOx and εn = 7 and dn = 200 nm are those of SiN. ΔVth linearly increases at a threshold electric field at 4.6 MV/cm on the same straight line regardless of the thickness of SiOx. From these results, we concluded that the Vst-induced Vth shift mechanism is Fowler–Nordheim type tunneling injection

Figure 7a shows the effect of back-channel oxidation (BCO) and passivation (PAS) on the Id-Vg characteristics of the MNOS TFT. The Id-Vg curve with Vth = 5.1 V is further enhanced to Vth = 10.9 V after BCO, although there is a slight degradation of the slope of the current increase in the sub-threshold region. The slope recovers after PAS without any change to the enhanced characteristics

(a) Effect of back-channel oxidation (BCO) and passivation (PAS) on Id–Vg characteristics of MNOS TFT. (b) Vth and Vth standard deviation, σVth, after BTS and after BCO without BTS treatments and (c) SiOX thickness as a function of position along gate-line, x.

The advantage of BCO over BTS is the uniformity of the enhanced characteristics; Fig. 7b shows the distribution of the enhanced Vth as a function of position along gate-line, x, for the MNOS TFTs connected with a 90-mm-long gate line in the TFT substrate after BTS and BCO treatments. The average value of Vth and the standard deviation, σVth, for pristine TFTs before BTS or BCO, are 5.1 V and 0.35 V, respectively. After BCO, Vth is uniformly enhanced, with an average Vth = 11 V and σVth = 0.4 V without increasing σVth. On the other hand, after BTS, Vth is nonuniformly enhanced with an average Vth = 9.3 V and σVth of 1.4 V. In particular, Vth increases linearly as a function of position along gate-line, x. As the gate SiOx thickness linearly decreases, from (54 nm) to (47 nm) with increasing x as shown in Fig. 7c, the increase in ΔVth after BTS with x is due to increase in the electric field applied to SiOx as shown in Fig. 6c and Eq. 1.

It has been shown that the Vth of the MNOS TFT is independent of the gate SiOx thickness when the thickness is more than 5 nm8a, Vth of the MNOS TFT with the BCO treatment becomes almost independent of the BCO SiOx thickness. As shown in the inset, the thickness of BCO SiOx composed of oxidized a-Si:H linearly increases with BCO processing time, and the Vth increase almost saturates at a BCO SiOx thickness greater than 5 nm. Therefore, the enhanced MNOS TFT after BCO has a uniformly high Vth that is robust to thickness fluctuations of the gate and BCO SiOx layers. BCO also has an advantage over BTS in terms of the stability of Vth as shown in Fig. 8b, which plots the annealing time dependence of Vth for BCO and BTS. In this experiment, the stoichiometry (x) of the gate SiOx was 1.78 for BTS and 1.78 and 1.9 for BCO. The annealing temperature in the N2 atmosphere was 200 °C. In the case of BTS, Vth decreased to the pristine value after approximately 5 h of annealing, while Vth decreased more slowly in the case of BCO. In particular, the annealing time required for Vth to fall to 7 V was 7.5 times longer than that of BTS. Increasing the stoichiometry (x) of the gate SiOx dramatically improved the BCO-enhanced Vth to as much as 11 V, which was stably maintained after 24 h of annealing at 200 °C.

(a) Dependence of Vth on thickness of back-channel oxidized (BCO) SiOX. The inset shows the SiOx thickness dependence on the BCO process time for RF powers of 200 W and 500 W. (b) Stability of Vth as a function of annealing time for three different TFTs with gate SiOx stoichiometry, x = 1.78 and bias temperature stress (BTS), x = 1.78 and BCO, and x = 1.9 and BCO. The temperature of annealing in the N2 atmosphere was 200 °C. (c) Band diagram of back-channel oxidized MNOS TFT. The red arrows show the electric dipoles at the SiOX/a-Si:H and a-Si:H/BCO SiOX interfaces.

A schematic band model for the MNOS TFT with the BCO treatment and the sectional structure of the interface between the a-Si:H and gate and BCO SiOx are shown in Fig. 8c. The uniformly high Vth that is independent of SiOx thickness is due to the dipoles generated at the channel and back-channel interfaces between a-Si:H and SiOx8 of reference

Monochrome character, graphic and static displays require different input voltages. All the different LCD voltage symbols can be confusing, but believe it or not, there is a system to the madness.

The voltages VCC, VDD, VSS and VEE are used in describing voltages at various common power supply terminals. The differences between these voltages stem from their origins in the transistor circuits they were originally used for.

This LCD voltage terminology originated from the terminals of each type of transistor and their common connections in logic circuits. In other words, VCC is often applied to BJT (Bipolar Junction Transistor) collectors, VEE to BJT emitters, VDD to FET (Field-Effect Transistor) drains and VSS to FET sources. Most CMOS (Complementary metal–oxide–semiconductor) IC data sheets now use VCC and GND to designate the positive and negative supply pins.

In the Pleistocene era (1960’s or earlier), logic was implemented with bipolar transistors. NPN (Negative-Positive-Negative) were used because they were faster. It made sense to call positive supply voltage VCC where the “C” stands for collector. The negative supply was called VEE where “E” stands for emitter.

When FET transistor logic came around a similar naming convention was used, but now positive supply was VDD where “D” stands for drain. The negative supply was called VSS where “S” stands for source. Now that CMOS is the most common logic this makes no sense. The “C” in CMOS is for “complementary” but the naming convention still persists. In practice today VCC/VDD means positive power supply voltage and VEE/VSS is for negative supply or ground.

The convention of VAB means the voltage potential between VA and VB. The convention of using 3 letters was used to show power supply and ground reference voltages as well. In some cases a processor may have both an analog and digital power supply. In this case VCCA/VCCD and VSSA/VSSD are used. Another reason for the 3 letters is in an NPN circuit with a load resister between the collector and VCC. VC would be the collector voltage. In this case VCC is the positive power supply voltage and would be higher than VC.

Note: Most Segment, Character and Graphic displays will operate with a VDD of 5V or 3.3V. It may be possible to drive the display with as little as 3.0V, but the module may not perform very well in colder temperatures. The colder the ambient temperature, the more power is required to drive the segments.

Pin three (3) is Vo and is the difference in voltage between VDD and VSS. This LCD voltage is adjusted to provide the sharpest contrast. The adjustment can be accomplished through a fixed resistor or a variable potentiometer. Many products have firmware that monitor the temperature and automatically adjust the contrast voltage.

In a Liquid Crystal Display (LCD), V0 is used to vary the screen brightness or contrast. Contrast, simply put is the ratio of the light areas to the dark areas in a LCD. This is usually done in a production setting with values which are optimized for most users. Temperature can have an undesirable effect on the display brightness and for this reason a varying resister or potentiometer is used to accommodate the desires of the user.

Below is a data sheet of a 16x2 Character LCD module that shows various recommended driving voltages. The LCD voltage can range from MIN (minimum) to TYP (Typical) to Max (maximum).

If the supplied LCD voltage drops too low, the display is ‘under-driven’ and will produce segments that are ‘grey’. The lower the LCD voltage falls below the acceptable threshold, the lower the contrast will be.

If the LCD is over-driven, you may see ghosting. This is where segments that should not be ‘on’ are gray. They are not as dark as the segments that should be on, but they can be seen and may cause confusion for the end user.

There are times when a customer needs to replace a display that has been discontinued or EOL (End-Of -Life) by their previous LCD supplier. The previous LCD’s pin-outs may be different than Focus’ standard, off-the-shelf display. This is not a large problem to overcome.

Focus Displays will redesign the PCB to match the customer’s old pin out. This will save the customer time and cost so that they will not need to redesign their PCB.

LED backlights are DC (Direct Current) driven and can be supplied from any one of three locations. The most popular is from pins 15 and 16. The second most popular option is to draw power from the ‘A’ and ‘K’ connections on the right side of the PCB.

The third option is to pull power from pins one and two. This is the same location from which the LCD is pulling its power. Focus does not recommend this option and can modify the PCB for the customer to connect the backlight from a different location.

Many LCD Modules will require more than one internal voltage/current. This may make it necessary for the customer to supply the needed inputs. They may need to supply 3V, 5V, 9V, -12V etc.

The solution for this is to integrate a charge pump (or booster circuit) into the LCD circuitry. This solution works in most applications, but if the product will be operating in an intrinsic environment, care must be taken with layout of the circuit board.

Intrinsically-safe LCDs are Liquid Crystal Displays that are designed to operate in conditions where an arc or spark can cause an explosion. In these cases, charge pumps cannot be employed. In fact, the total capacitive value of the display needs to be kept to a minimum.

Focus Display Solutions does not build a display that is labeled ‘Intrinsically safe’ but we do design the LCD to meet the requirements of the engineer. In meeting the design engineer’s requirements, the display may need to contain two or three independent inputs. Focus can redesign the PCB and lay out the traces to allow for these additional inputs.

TFT-LCD was invented in 1960 and successfully commercialized as a notebook computer panel in 1991 after continuous improvement, thus entering the TFT-LCD generation.

Simply put, the basic structure of the TFT-LCD panel is a layer of liquid crystal sandwiched between two glass substrates. The front TFT display panel is coated with a color filter, and the back TFT display panel is coated with a thin film transistor (TFT). When a voltage is applied to the transistor, the liquid crystal turns and light passes through the liquid crystal to create a pixel on the front panel. The backlight module is responsible for providing the light source after the TFT-Array panel. Color filters give each pigment a specific color. The combination of each different color pixel gives you an image of the front of the panel.

The TFT panel is composed of millions of TFT devices and ITO (In TI Oxide, a transparent conductive metal) regions arranged like a matrix, and the so-called Array refers to the region of millions of TFT devices arranged neatly, which is the panel display area. The figure below shows the structure of a TFT pixel.

No matter how the design of TFT display board changes or how the manufacturing process is simplified, its structure must have a TFT device and control liquid crystal region (if the light source is penetration-type LCD, the control liquid crystal region is ITO; but for reflective LCD, the metal with high reflection rate is used, such as Al).

The TFT device is a switch, whose function is to control the number of electrons flowing into the ITO region. When the number of electrons flowing into the ITO region reaches the desired value, the TFT device is turned off. At this time, the entire electrons are kept in the ITO region.

The figure above shows the time changes specified at each pixel point. G1 is continuously selected to be turned on by the driver IC from T1 to TN so that the source-driven IC charges TFT pixels on G1 in the order of D1, D2, and Dn. When TN +1, gATE-driven IC is selected G2 again, and source-driven IC is selected sequentially from D1.

The more vertical the Angle at which the LIQUID crystal stands, the more light will not be guided by the LIQUID crystal. Different liquid crystal standing angles will direct different amounts of light. From the above examples, the larger the angle at which the liquid crystal stands, the weaker the light that can be penetrated. (The direction of the upper and lower polarizer will determine the intensity of penetration, so as long as you understand the Angle of the liquid crystal standing will guide the intensity of light).

Undirected light is absorbed by the upper polarizer. Natural light is polarized in any direction. The function of the polarizer is to filter out most of the light oscillating in different directions and only allow light in a specific direction to pass through.

Many people don’t understand the differences between generations of TFT-LCD plants, but the principle is quite simple. The main difference between generations of plants is in the size of glass substrates, which are products cut from large glass substrates. Newer plants have larger glass substrates that can be cut to increase productivity and reduce costs, or to produce larger panels (such as TFT display LCD TV panels).

The TFT-LCD industry first emerged in Japan in the 1990s, when a process was designed and built in the country. The first-generation glass substrate is about 30 X 40 cm in size, about the size of a full-size magazine, and can be made into a 15-inch panel. By the time Acer Technology (which was later merged with Unioptronics to become AU Optronics) entered the industry in 1996, the technology had advanced to A 3.5 generation plant (G3.5) with glass substrate size of about 60 X 72 cm.Au Optronics has evolved to a sixth-generation factory (G6) process where the G6 glass substrate measures 150 X 185 cm, the size of a double bed. One G6 glass substrate can cut 30 15-inch panels, compared with the G3.5 which can cut 4 panels and G1 which can only cut one 15-inch panel, the production capacity of the sixth generation factory is enlarged, and the relative cost is reduced. In addition, the large size of the G6 glass substrate can be cut into large-sized panels, which can produce eight 32-inch LCD TV panels, increasing the diversity of panel applications. Therefore, the global TFT LCD manufacturers are all invested in the new generation of plant manufacturing technology.

The TRANSISTor-LCD is an acronym for thin-film TFT Display. Simply put, TFT-LCD panels can be seen as two glass substrates sandwiched between a layer of liquid crystal. The upper glass substrate is connected to a Color Filter, while the lower glass has transistors embedded in it. When the electric field changes through the transistor, the liquid crystal molecules deflect, so as to change the polarization of the light, and the polarizing film is used to determine the light and shade state of the Pixel. In addition, the upper glass is fitted to the color filter, so that each Pixel contains three colors of red, blue and green, which make up the image on the panel.

– The Array process in the front segment is similar to the semiconductor process, except that thin-film transistors are made on glass rather than silicon wafers.

– The middle Cell is based on the glass substrate of the front segment Array, which is combined with the glass substrate of the color filter, and liquid crystal (LC) is injected between the two glass substrates.

-The rear module assembly process is the production operation of assembling the glass after the Cell process with other components such as backlight plate, circuit, frame, etc.

The luminescence principle is tied to the vapor electroplating organic film between the transparent anode and the metal cathode. The electron and electric hole are injected, and the energy is converted into visible light by the composite between the organic film. And can match different organic materials, emit different colors of light, to achieve the requirements of the full-color display.

The organic light display can be divided into Passive Matrix (PMOLED) and Active Matrix (AMOLED) according to the driving mode. The so-called active driven OLED(AMOLED) can be visualized in the Thin Film Transistor (TFT) as a capacitor that stores signals to provide the ability to visualize the light in a grayscale.

Although the production cost and technical barriers of passive OLED are low, it is limited by the driving mode and the resolution cannot be improved. Therefore, the application product size is limited to about 5″, and the product will be limited to the market of low resolution and small size. For high precision and large picture, the active drive is mainly used. The so-called active drive is capacitive to store the signal, so when the scanning line is swept, the pixel can still maintain its original brightness. In the case of passive drive, only the pixels selected by the scan line are lit. Therefore, in an active-drive mode, OLED does not need to be driven to very high brightness, thus achieving better life performance and high resolution.OLED combined with TFT technology can realize active driving OLED, which can meet the current display market for the smoothness of screen playback, as well as higher and higher resolution requirements, fully display the above superior characteristics of OLED.

The technology to grow The TFT on the glass substrate can be amorphous Silicon (A-SI) manufacturing process and Low-Temperature Poly-Silicon (LTPS). The biggest difference between LTPS TFT and A-SI TFT is the difference between its electrical properties and the complicated manufacturing process. LTPS TFT has a higher carrier mobility rate, which means that TFT can provide more current, but its process is complicated.A-si TFT, on the other hand, although a-Si’s carrier movement rate is not as good as LTPS’s, it has a better competitive advantage in cost due to its simple and mature process.Au Optronics is the only company in the world that has successfully combined OLED with LTPS and A-SI TFT at the same time, making it a leader in active OLED technology.

Polysilicon is a silicon-based material about 0.1 to several um in size, composed of many silicon particles. In the semiconductor manufacturing industry, polysilicon should normally be treated by Low-Pressure Chemical Vapor Deposition. If the annealing process is higher than 900C, this method is known as SPC. Solid Phase Deposition. However, this method does not work in the flat display industry because the maximum temperature of the glass is only 650C. Therefore, LTPS technology is specifically applied to the manufacture of flat displays.

Let me suppose that it belongs to the SPC method. However, compared with traditional SPC, this method can produce polysilicon at low temperatures (about 500~600 C). This is because the thin layer of metal is coated before the formation of crystallization, and the metal composition plays an active role in reducing crystallization.

A method for direct deposition of Poly-film without vapor extraction. The sedimentation temperature may be below 300C. Growth mechanisms contain catalytic cracking reactions of SiH4-H2 mixtures.

This method is currently the most widely used. The Excimer laser is used for heating and melting A-SI. It contains low amounts of hydrogen and recrystallizes to Poly-film.

The LTPS membrane is much more complex than a-SI, yet the LTPS TFT is 100 times more mobile than A-SI TFT. And CMOS program can be carried out directly on a glass substrate. Here are some of the features that p-SI has over A-SI:

2. Vehicle for OLED: High mobility means that the OLED Device can provide a large driving current, so it is more suitable for an active OLED display substrate.

3. Compact module: As part of the drive circuit can be made on the glass substrate, the circuit on the PCB is relatively simple, thus saving the PCB area.

MVA technology not only improves the panel view but also solves most of the problems of gray-scale inversion due to the special arrangement mode of liquid crystals.

LCD screens are backlit to project images through color filters before they are reflected in our eye Windows. This mode of carrying backlit LCD screens, known as “penetrating” LCD screens, consumes most of the power through backlit devices. The brighter the backlight, the brighter it will appear in front of the screen, but the more power it will consume.

The “reflective” architecture USES an external light source to display the image via a reflector, which saves electricity but is harder to see in the absence of an external light source.

“Half penetration and half reflection” is the compromise between the two. The device USES a half mirror instead of the reflector, which can not only pass through the backlight but also use the reflection from the external light source to achieve the effect of saving electricity, increasing brightness, and reducing weight.

Different from the traditional manufacturing process, COG technology