tft active matrix lcd panel free sample

Full-color (262K) 800x480 RGB display module consists of a TFT panel, a driver IC, an FFC/FPC flexible cable, and an LED backlight. This TFT LCD display module does not include an on-board LCD controller.

A thin-film-transistor liquid-crystal display (TFT LCD) is a variant of a liquid-crystal display that uses thin-film-transistor technologyactive matrix LCD, in contrast to passive matrix LCDs or simple, direct-driven (i.e. with segments directly connected to electronics outside the LCD) LCDs with a few segments.

In February 1957, John Wallmark of RCA filed a patent for a thin film MOSFET. Paul K. Weimer, also of RCA implemented Wallmark"s ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET. It was made with thin films of cadmium selenide and cadmium sulfide. The idea of a TFT-based liquid-crystal display (LCD) was conceived by Bernard Lechner of RCA Laboratories in 1968. In 1971, Lechner, F. J. Marlowe, E. O. Nester and J. Tults demonstrated a 2-by-18 matrix display driven by a hybrid circuit using the dynamic scattering mode of LCDs.T. Peter Brody, J. A. Asars and G. D. Dixon at Westinghouse Research Laboratories developed a CdSe (cadmium selenide) TFT, which they used to demonstrate the first CdSe thin-film-transistor liquid-crystal display (TFT LCD).active-matrix liquid-crystal display (AM LCD) using CdSe TFTs in 1974, and then Brody coined the term "active matrix" in 1975.high-resolution and high-quality electronic visual display devices use TFT-based active matrix displays.

The circuit layout process of a TFT-LCD is very similar to that of semiconductor products. However, rather than fabricating the transistors from silicon, that is formed into a crystalline silicon wafer, they are made from a thin film of amorphous silicon that is deposited on a glass panel. The silicon layer for TFT-LCDs is typically deposited using the PECVD process.

Polycrystalline silicon is sometimes used in displays requiring higher TFT performance. Examples include small high-resolution displays such as those found in projectors or viewfinders. Amorphous silicon-based TFTs are by far the most common, due to their lower production cost, whereas polycrystalline silicon TFTs are more costly and much more difficult to produce.

The twisted nematic display is one of the oldest and frequently cheapest kind of LCD display technologies available. TN displays benefit from fast pixel response times and less smearing than other LCD display technology, but suffer from poor color reproduction and limited viewing angles, especially in the vertical direction. Colors will shift, potentially to the point of completely inverting, when viewed at an angle that is not perpendicular to the display. Modern, high end consumer products have developed methods to overcome the technology"s shortcomings, such as RTC (Response Time Compensation / Overdrive) technologies. Modern TN displays can look significantly better than older TN displays from decades earlier, but overall TN has inferior viewing angles and poor color in comparison to other technology.

Most TN panels can represent colors using only six bits per RGB channel, or 18 bit in total, and are unable to display the 16.7 million color shades (24-bit truecolor) that are available using 24-bit color. Instead, these panels display interpolated 24-bit color using a dithering method that combines adjacent pixels to simulate the desired shade. They can also use a form of temporal dithering called Frame Rate Control (FRC), which cycles between different shades with each new frame to simulate an intermediate shade. Such 18 bit panels with dithering are sometimes advertised as having "16.2 million colors". These color simulation methods are noticeable to many people and highly bothersome to some.gamut (often referred to as a percentage of the NTSC 1953 color gamut) are also due to backlighting technology. It is not uncommon for older displays to range from 10% to 26% of the NTSC color gamut, whereas other kind of displays, utilizing more complicated CCFL or LED phosphor formulations or RGB LED backlights, may extend past 100% of the NTSC color gamut, a difference quite perceivable by the human eye.

The transmittance of a pixel of an LCD panel typically does not change linearly with the applied voltage,sRGB standard for computer monitors requires a specific nonlinear dependence of the amount of emitted light as a function of the RGB value.

In-plane switching was developed by Hitachi Ltd. in 1996 to improve on the poor viewing angle and the poor color reproduction of TN panels at that time.

Most panels also support true 8-bit per channel color. These improvements came at the cost of a higher response time, initially about 50 ms. IPS panels were also extremely expensive.

In 2004, Hydis Technologies Co., Ltd licensed its AFFS patent to Japan"s Hitachi Displays. Hitachi is using AFFS to manufacture high end panels in their product line. In 2006, Hydis also licensed its AFFS to Sanyo Epson Imaging Devices Corporation.

Less expensive PVA panels often use dithering and FRC, whereas super-PVA (S-PVA) panels all use at least 8 bits per color component and do not use color simulation methods.BRAVIA LCD TVs offer 10-bit and xvYCC color support, for example, the Bravia X4500 series. S-PVA also offers fast response times using modern RTC technologies.

A technology developed by Samsung is Super PLS, which bears similarities to IPS panels, has wider viewing angles, better image quality, increased brightness, and lower production costs. PLS technology debuted in the PC display market with the release of the Samsung S27A850 and S24A850 monitors in September 2011.

TFT dual-transistor pixel or cell technology is a reflective-display technology for use in very-low-power-consumption applications such as electronic shelf labels (ESL), digital watches, or metering. DTP involves adding a secondary transistor gate in the single TFT cell to maintain the display of a pixel during a period of 1s without loss of image or without degrading the TFT transistors over time. By slowing the refresh rate of the standard frequency from 60 Hz to 1 Hz, DTP claims to increase the power efficiency by multiple orders of magnitude.

Due to the very high cost of building TFT factories, there are few major OEM panel vendors for large display panels. The glass panel suppliers are as follows:

External consumer display devices like a TFT LCD feature one or more analog VGA, DVI, HDMI, or DisplayPort interface, with many featuring a selection of these interfaces. Inside external display devices there is a controller board that will convert the video signal using color mapping and image scaling usually employing the discrete cosine transform (DCT) in order to convert any video source like CVBS, VGA, DVI, HDMI, etc. into digital RGB at the native resolution of the display panel. In a laptop the graphics chip will directly produce a signal suitable for connection to the built-in TFT display. A control mechanism for the backlight is usually included on the same controller board.

The low level interface of STN, DSTN, or TFT display panels use either single ended TTL 5 V signal for older displays or TTL 3.3 V for slightly newer displays that transmits the pixel clock, horizontal sync, vertical sync, digital red, digital green, digital blue in parallel. Some models (for example the AT070TN92) also feature input/display enable, horizontal scan direction and vertical scan direction signals.

New and large (>15") TFT displays often use LVDS signaling that transmits the same contents as the parallel interface (Hsync, Vsync, RGB) but will put control and RGB bits into a number of serial transmission lines synchronized to a clock whose rate is equal to the pixel rate. LVDS transmits seven bits per clock per data line, with six bits being data and one bit used to signal if the other six bits need to be inverted in order to maintain DC balance. Low-cost TFT displays often have three data lines and therefore only directly support 18 bits per pixel. Upscale displays have four or five data lines to support 24 bits per pixel (truecolor) or 30 bits per pixel respectively. Panel manufacturers are slowly replacing LVDS with Internal DisplayPort and Embedded DisplayPort, which allow sixfold reduction of the number of differential pairs.

Backlight intensity is usually controlled by varying a few volts DC, or generating a PWM signal, or adjusting a potentiometer or simply fixed. This in turn controls a high-voltage (1.3 kV) DC-AC inverter or a matrix of LEDs. The method to control the intensity of LED is to pulse them with PWM which can be source of harmonic flicker.

The bare display panel will only accept a digital video signal at the resolution determined by the panel pixel matrix designed at manufacture. Some screen panels will ignore the LSB bits of the color information to present a consistent interface (8 bit -> 6 bit/color x3).

With analogue signals like VGA, the display controller also needs to perform a high speed analog to digital conversion. With digital input signals like DVI or HDMI some simple reordering of the bits is needed before feeding it to the rescaler if the input resolution doesn"t match the display panel resolution.

Kawamoto, H. (2012). "The Inventors of TFT Active-Matrix LCD Receive the 2011 IEEE Nishizawa Medal". Journal of Display Technology. 8 (1): 3–4. Bibcode:2012JDisT...8....3K. doi:10.1109/JDT.2011.2177740. ISSN 1551-319X.

Brody, T. Peter; Asars, J. A.; Dixon, G. D. (November 1973). "A 6 × 6 inch 20 lines-per-inch liquid-crystal display panel". 20 (11): 995–1001. Bibcode:1973ITED...20..995B. doi:10.1109/T-ED.1973.17780. ISSN 0018-9383.

K. H. Lee; H. Y. Kim; K. H. Park; S. J. Jang; I. C. Park & J. Y. Lee (June 2006). "A Novel Outdoor Readability of Portable TFT-LCD with AFFS Technology". SID Symposium Digest of Technical Papers. AIP. 37 (1): 1079–82. doi:10.1889/1.2433159. S2CID 129569963.

First, you need to check whether this display has On-cell or In-cell touch panel, if has, it only needs to add a cover glass on it. If not, it needs an external touch panel.

Because the shape of the cover glass depends on the design of the clients, to avoid infringement of appearance, most of the developers need different customized touch panels.

GL109RAN02A display module is a transmissive type color active matrix TFT(Thin Film Transistor) liquid crystal display(LCD) that uses amorphous silicon TFT as a switching device. This module is composed of a TFT LCD module, a driver circuit, and a backlight unit. The resolution of 1.09 inches contains 240(RGB)*240 dots and can display up to 262K colors.

If you want to buy a new monitor, you might wonder what kind of display technologies I should choose. In today’s market, there are two main types of computer monitors: TFT LCD monitors & IPS monitors.

The word TFT means Thin Film Transistor. It is the technology that is used in LCD displays.  We have additional resources if you would like to learn more about what is a TFT Display. This type of LCDs is also categorically referred to as an active-matrix LCD.

These LCDs can hold back some pixels while using other pixels so the LCD screen will be using a very minimum amount of energy to function (to modify the liquid crystal molecules between two electrodes). TFT LCDs have capacitors and transistors. These two elements play a key part in ensuring that the TFT display monitor functions by using a very small amount of energy while still generating vibrant, consistent images.

Industry nomenclature: TFT LCD panels or TFT screens can also be referred to as TN (Twisted Nematic) Type TFT displays or TN panels, or TN screen technology.

IPS (in-plane-switching) technology is like an improvement on the traditional TFT LCD display module in the sense that it has the same basic structure, but has more enhanced features and more widespread usability.

These LCD screens offer vibrant color, high contrast, and clear images at wide viewing angles. At a premium price. This technology is often used in high definition screens such as in gaming or entertainment.

Both TFT display and IPS display are active-matrix displays, neither can’t emit light on their own like OLED displays and have to be used with a back-light of white bright light to generate the picture. Newer panels utilize LED backlight (light-emitting diodes) to generate their light hence utilizing less power and requiring less depth by design. Neither TFT display nor IPS display can produce color, there is a layer of RGB (red, green, blue) color filter in each LCD pixels to produce the color consumers see. If you use a magnifier to inspect your monitor, you will see RGB color in each pixel. With an on/off switch and different level of brightness RGB, we can get many colors.

Winner. IPS TFT screens have around 0.3 milliseconds response time while TN TFT screens responds around 10 milliseconds which makes the latter unsuitable for gaming

Winner. the images that IPS displays create are much more pristine and original than that of the TFT screen. IPS displays do this by making the pixels function in a parallel way. Because of such placing, the pixels can reflect light in a better way, and because of that, you get a better image within the display.

Winner. While the TFT LCD has around 15% more power consumption vs IPS LCD, IPS has a lower transmittance which forces IPS displays to consume more power via backlights. TFT LCD helps battery life.

Normally, high-end products, such as Apple Mac computer monitors and Samsung mobile phones, generally use IPS panels. Some high-end TV and mobile phones even use AMOLED (Active Matrix Organic Light Emitting Diodes) displays. This cutting edge technology provides even better color reproduction, clear image quality, better color gamut, less power consumption when compared to LCD technology.

What you need to choose is AMOLED for your TV and mobile phones instead of PMOLED. If you have budget leftover, you can also add touch screen functionality as most of the touch nowadays uses PCAP (Projective Capacitive) touch panel.

This kind of touch technology was first introduced by Steve Jobs in the first-generation iPhone. Of course, a TFT LCD display can always meet the basic needs at the most efficient price. An IPS display can make your monitor standing out.

In market, LCD means passive matrix LCDs which increase TN (Twisted Nematic), STN (Super Twisted Nematic), or FSTN (Film Compensated STN) LCD Displays. It is a kind of earliest and lowest cost display technology.

LCD screens are still found in the market of low cost watches, calculators, clocks, utility meters etc. because of its advantages of low cost, fast response time (speed), wide temperature range,  low power consumption, sunlight readable with transflective or reflective polarizers etc.  Most of them are monochrome LCD display and belong to passive-matrix LCDs.

TFT LCDs have capacitors and transistors. These are the two elements that play a key part in ensuring that the TFT display monitor functions by using a very small amount of energy without running out of operation.

Normally, we say TFT LCD panels or TFT screens, we mean they are TN (Twisted Nematic) Type TFT displays or TN panels, or TN screen technology. TFT is active-matrix LCDs, it is a kind of LCD technologies.

TFT has wider viewing angles, better contrast ratio than TN displays. TFT display technologies have been widely used for computer monitors, laptops, medical monitors, industrial monitors, ATM, point of sales etc.

Actually, IPS technology is a kind of TFT display with thin film transistors for individual pixels. But IPS displays have superior high contrast, wide viewing angle, color reproduction, image quality etc. IPS screens have been found in high-end applications, like Apple iPhones, iPads, Samsung mobile phones, more expensive LCD monitors etc.

Both TFT LCD displays and IPS LCD displays are active matrix displays, neither of them can produce color, there is a layer of RGB (red, green, blue) color filter in each LCD pixels to make LCD showing colors. If you use a magnifier to see your monitor, you will see RGB color. With switch on/off and different level of brightness RGB, we can get many colors.

Neither of them can’t release color themselves, they have relied on extra light source in order to display. LED backlights are usually be together with them in the display modules as the light sources. Besides, both TFT screens and IPS screens are transmissive, it will need more power or more expensive than passive matrix LCD screens to be seen under sunlight.  IPS screens transmittance is lower than TFT screens, more power is needed for IPS LCD display.

TFT LCD image retention we also call it "Burn-in". In CRT displays, this caused the phosphorus to be worn and the patterns to be burnt in to the display. But the term "burn in" is a bit misleading in LCD screen. There is no actual burning or heat involved. When you meet TFT LCD burn in problem, how do you solve it?

When driving the TFT LCD display pixels Continously, the slightly unbalanced AC will attract free ions to the pixels internal surface. Those ions act like an addition DC with the AC driving voltage.

Those burn-in fixers, screen fixer software may help. Once the Image Retention happened on a TFT, it may easy to appear again. So we need to take preventive actions to avoid burn in reappearing.

For normal white TFT LCD, white area presenting minimal drive, black area presenting maximum drive. Free ions inside the TFT may are attracted towards the black area (maximum drive area)

TFT is an active-matrix LCD along with an improved image quality where one transistor for every pixel controls the illumination of the display enabling an easy view even in bright environments. TFT"s are gaining importance in almost all the industries wherever displays are required. They find applications in several electronic goods including cell phones, portable video game devices, televisions, laptops, desktops, among others. These devices are also used in automotive industry, navigation and medical equipment, laser pointer astronomy, SLR cameras and digital photo frames which is likely to drive the TFT LCD panel market. In the recent years, LCDs have gained popularity due to their auspicious properties including less power consumption, compact size and low price in comparison to other display panels. This is one of the key aspect which is driving the growth of the TFT LCD panel market.

The rising demand for larger and 4K televisions, fuelled by rising standards of living and inflating disposable incomes, signifies another key factor for the TFT LCD panel market growth. Easy installation of LCD glass substrates, technological advancements along with a worldwide boost in gaming industry are some of the other factors which are positively influencing the TFT LCD panel growth of the market. However, the availability of alternative display panels like LED coupled with the high costs of production as well as raw materials mighty hamper the growth of the global TFT LCD panel market.

The "Global TFT LCD Panel Market Analysis to 2028" is a specialized and in-depth study of TFT LCD panel with a special focus on the global market trend analysis. The report aims to provide an overview of TFT LCD panel with detailed market segmentation by size, and application. The global TFT LCD panel market is expected to witness high growth during the forecast period. The report provides key statistics on the TFT LCD panel market and offers key trends and opportunities in TFT LCD panel market.

The TFT LCD panel market is segmented on the basis of size, and application. On the basis of size, market is segmented as Large Size TFT-LCD display panel, medium and small size TFT-LCD Display Panel. On the basis of Application, market is segmented as Television, mobile phones, mobile pcs, monitors, automotive, and others

The report provides a detailed overview of the industry including both qualitative and quantitative information. It provides overview and forecast of the global TFT LCD panel market based on various segments. It also provides market size and forecast estimates from year 2020 to 2028 with respect to five major regions, namely; North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America. The global TFT LCD panel market by each region is later sub-segmented by respective countries and segments.

The report analyzes factors affecting TFT LCD Panel market from both demand and supply side and further evaluates market dynamics effecting the market during the forecast period i.e., drivers, restraints, opportunities, and future trend. The report also provides exhaustive PEST analysis for all five regions namely; North America, Europe, APAC, MEA and South America after evaluating political, economic, social and technological effecting the TFT LCD Panel market in these regions.

The reports cover key developments in the TFT LCD Panel market as organic and inorganic growth strategies. Various companies are focusing on organic growth strategies such as product launches, product approvals and others such as patents and events. Inorganic growth strategies activities witnessed in the market were acquisitions, and partnership & collaborations. These activities have paved way for expansion of business and customer base of market players. The market players from TFT LCD Panel market are anticipated to lucrative growth opportunities in the future with the rising demand for TFT LCD Panel in the global market. Below mentioned is the list of few companies engaged in the TFT LCD Panel market.

The report also includes the profiles of TFT LCD Panel market companies along with their SWOT analysis and market strategies. In addition, the report focuses on leading industry players with information such as company profiles, components and services offered, financial information of last 3 years, key development in past five years.

The V-LCD651STX-3GSDI offers a durable and lightweight design, weighing in at only 1.3 pounds. It also features our completely digital TFT-MegaPixel high resolution LCD screen with 2.4 million pixels, 4-pin XLR power jack, and optical-grade polycarbonate screen protection. Analog signals are digitized using advanced 10-bit processing with 4x oversampling and adaptive 5-line comb filter.

Marshall Electronics offers a full line of Super Transflective Outdoor Monitors, designed specifically for outdoor applications with high ambient light. Our technology minimizes surface reflection of both outdoor and indoor light, while featuring a much wider color reproduction range than typical transflective/reflective LCDs or even those with increased backlight performance.

These outdoor super-transmissive LCDs provide improved visibility by producing high-contrast images and a wider viewing angle, even under diverse and challenging lighting environments! This innovative technology dramatically boosts the efficiency of the LCD backlight"s light utilization, while maintaining extended temperature ratings and low power consumption for outdoor operation.

Focus Displays offers a wide range of standard full color TFT displays. 64 million unique colors, high brightness, sharp contrast, -30C operating temperature, and fast response time are all good descriptions of a TFT display. This is why TFT technology is one of the most popular choices for a new product.

Thin Film Transistor (TFT) display technology can be seen in products such as laptop computers, cell phones, tablets, digital cameras, and many other products that require color. TFT’s are active matrix displays which offers exceptional viewing experiences especially when compared to other passive matrix technologies. The clarity on TFT displays is outstanding; and they possess a longer half-life than some types of OLEDs and range in sizes from less than an inch to over 15 inches.

CCFL’s are still available, but are becoming a legacy (obsolete) component. TFT displays equipped with a CCFL require higher MOQs (Minimum Order Quantities) than displays with LED backlights.

The majority of TFT displays contain a touch panel, or touch screen. The touch panel is a touch-sensitive transparent overlay mounted on the front of the display glass. Allowing for interaction between the user and the LCD display.

Some touch panels require an independent driver IC; which can be included in the TFT display module or placed on the customer’s Printed Circuit Board (PCB). Touch screens make use of coordinate systems to locate where the user touched the screen.

Resistive touch panels are the lowest cost option and are standard equipment on many TFT modules. They are more common on smaller TFT displays, but can still be incorporated on larger modules.

Resistive touch panels are constructed using flexible materials with an air gap between and are coated with a resistive layer. When an object applies pressure to the top layer, it makes contact with microdots located on the bottom layer. This allows the touch screen to find the location of the touch using X and Y coordinates.

Custom resistive touch screens are an option if the customer requires a seal or gasket to be in contact with the glass and not in contact with the touch panel.

Resistive touch panels allow a single touch, although advances in new resistive technology will allow multi-touch operation in the near future. One main advantage of a resistive touch screen is the ability to be activated by the touch of any material. This includes a range of items from a bare finger, to a pencil, to even the edge of a credit card; regardless of its composition.

Capacitive touch panels have become popular with such software as Windows 8®, Android® and Apple®. Additionally it is used in products such as cell phones and tablets, where multi-touch and zoom capabilities are important.

Contrast ratio, or static contrast ratio, is one way to measure the sharpness of the TFT LCD display. This ratio is the difference between the darkest black and the brightest white the display is able to produce. The higher the number on the left, the sharper the image. A typical contrast ratio for TFT may be 300:1. This number ratio means that the white is 300 times brighter than the black.

TFT LCD displays are measured in inches; this is the measurement of the diagonal distance across the glass. Common TFT sizes include: 1.77”, 2.4”, 2.8”, 3”, 4.3”, 5”, 5.7”, 5.8”, 7”, 10.2”, 12.1 and 15”.

TFT resolution is the number of dots or pixels the display contains. It is measured by the number of dots along the horizontal (X axis) and the dots along the vertical (Y axis).

Certain combinations of width and height are standardized and typically given a name and a letter representation that is descriptive of its dimensions. Popular names given to the TFT LCD displays resolution include:

Transmissive displays must have the backlight on at all times to read the display, but are not the best option in direct sunlight unless the backlight is 750 Nits or higher. A majority of TFT displays are Transmissive, but they will require more power to operate with a brighter backlight.

A primary job of the driver is to refresh each pixel. In passive TFT displays, the pixel is refreshed and then allowed to slowly fade (aka decay) until refreshed again. The higher the refresh frequency, the sharper the displays contrast.

The TFT display (minus touch screen/backlight) alone will contain one controller/driver combination. These are built into the display so the design engineer does not need to locate the correct hardware.

If you do not see a Thin Film Transistor (TFT) Display module that meets your specifications, or you need a replacement TFT, we can build a custom TFT displays to meet your requirements. Custom TFTs require a one-time tooling fee and may require higher MOQs.

Ready to order samples for your TFT design? Contact one of our US-based technical support people today concerning your design requirements. Note: We can provide smaller quantities for samples and prototyping.

Figures 3a–d show optical and SEM (scanning electron microscopy) images of the fabricated CL and CLSE pixel structures. Each structure has the same pixel size (80 μm × 240 μm) and minimum pattern size (5 μm). As shown in Fig. 3d, the white line patterns are the ITO interdigitated pixel and common electrodes. They are well connected to the source electrode and gate line via through holes, and the common electrodes at both ends cover the underlying data lines to prevent electrical noise from being applied to the LC layer. As will be shown later, this noise shield electrode (SE) is what makes the black matrix above the data line unnecessary

Optical and SEM (scanning electron microscopy) images of fabricated (a, b) CL and (c, d) CLSE pixel structures. The five white line patterns in (d) are the ITO interdigitated pixel and common electrodes. (e) Images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel. (f) The three-black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM) and (g) optical images of pixels without BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines).

Figure 3e shows images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel fabricated in our laboratory, (f) the three black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM), and (g) optical images of panel areas without the BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines). As can be seen in the image from the normal direction, the brightness and contrast of the display area with the top BM and middle BM patterns are almost the same, but the contrast of the display area without the BM is relatively lower because of the lower darkness level of the LC off pixels indicating “HITACHI”. As shown in Fig. 3g, this is due to light leaking through the aperture between the data line and adjacent common lines. Therefore, in the CL structure, the BM on the drain line is necessary to obtain a high contrast ratio by shielding light leakage. This is the same as in the conventional structure. On the contrary, there is no light leakage along the gate line through the gaps between the gate line and edges of the pixel/common electrodes, as is clearly shown in Fig. 3g. This is a unique advantage of the CL structure because the conventional structure must shield these gaps with the BM to prevent light leakage. The suppression of light leakage along the gate line in the CL structure is due to the driving scheme (see Fig. 2b,a for a comparison with the conventional structure). During the holding period (tOFF) in the conventional structure, regardless of the pixel voltage, Vp (including Vp = 0), nonzero Vgp and Vgc are always applied to keep the TFT off, and these voltages are applied to the LC layer, inducing light leakage as reported in

Figure 4a shows the gate voltage (Vg) dependence of the panel brightness, while the inset shows that of the TFT current (transfer characteristics). The gray curves are for the conventional IPS TFT-LCD with the TFT before enhancement, the common line, and the matrix BM (MBM) shown at the top of Fig. 3f. The blue curves are for the proposed CL structure with the enhanced TFT and the stripe BM (SBM) shown in the middle of Fig. 3f. In this case, enhanced TFT characteristics were obtained by using an MNOS TFT without back-channel oxidation that was enhanced by the BTS process. In both structures, the threshold voltages for panel brightness, defined by extrapolating the straight part of the brightness curves, reflect those of the TFT transfer curves defined as Vg at a drain current of 10−12 A, and they are well matched to be 4 V and 9 V, respectively. The maximum brightness for the CL structure is 137% higher than that for the conventional structure, which is due to the increase in the aperture ratio from 38 to 52% that results from the elimination of the common line and the BM covering the gate line.

(a) Dependence of panel brightness and TFT current on gate voltage for the conventional pixel structure of 38% aperture ratio (AR) with matrix black matrix (MBM) over both drain and gate lines and proposed CL pixel structure of 52% AR with strip black matrix (SBM) over only the drain lines. Transfer characteristics before and after bias temperature stress (BTS) treatment are shown in the inset. (b) Charging and (c) holding characteristics of enhanced TFT of the CL structure with gate as a common line. Vg and Vd in the TFT ON state are 30 V and +/−7 V, respectively.

To estimate the charging and holding characteristics of the MNOS-enhanced TFT in the panel, the gate TFT ON and OFF time dependences of the panel brightness were measured (Fig. 4b,c). The charging characteristics in Fig. 4b are plotted as a function of tON at tOFF = 16.6 ms, Vg = 30 V, and Vd = ± 7 V. The holding characteristics in Fig. 4c are plotted as a function of tOFF at tON = 34 μs. 95.1% charging at tON = 34 μs and 95.3% holding at tOFF = 16.6 ms indicate that the enhanced TFT has sufficient charging and holding performance to drive a standard VGA (640 × 480 pixels) panel (the number of scanning lines is estimated as tOFF/tON = 16.6/0.034 = 488).

To confirm the driving conditions for the CL structure without the BM along the gate line (with the SBM), the tOFF dependence of the contrast ratio (CR) in the CL panel was further investigated as shown in Fig. 5a, where CR is plotted as a function of tOFF for the CL panels with the matrix BM (MBM) and the strip BM (SBM). The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. The SBM and MBM panels keep CR higher than 240 with tOFF > 16.6 ms, the frame period of a display panel without flicker being noticeable to the human eye. both panels decrease CR when tOFF is less than 16.6 ms; the CR of the SBM panel decreases faster than the CR of the MBM panel. As shown in the inset, the decrease in CR was due to the increase in dark-state brightness with decreasing tOFF as light leakage increases along the gate line. This light leakage is induced by the voltage Vgp = Vgc = VgON = 30 V applied only for 34 μs during the TFT ON (charging) state, which is 1/488th the duration, tOFF = 16.6 ms, of the TFT OFF (holding) state with Vgp = Vgc = VgOFF = 0 V, but the ratio increases with decreasing tOFF and becomes effective enough to switch on LC layer and induce light leakage. However, it should be stressed again that the CL panel with the normal holding (TFT OFF) time of 16.6 ms does not suffer from the light leakage along the gate line, so the aperture ratio can be increased by removing the BM along the gate line.

(a) Contrast ratio (CR) for CL panels with matrix BM (MBM) and stripe BM (SBM) plotted as a function of tOFF. The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. Vd (= VLC) dependence of (b) brightness and (c) contrast ratio of the CLSE panel. Insets of (b): optical images indicating the elimination of the BM from the CLSE structure (upper left) and the MBM in the conventional structure (lower right). Insets of (c): CLSE panel composed of different areas with three different pixel structures and aperture ratios (ARs), i.e., CLSE structure without BM (60%), CL structure with SBM (52%), and conventional structure with MBM (38%).

Figure 5b,c shows the Vd (= VLC) dependence of the brightness and contrast ratio of the CLSE panel without a BM along the drain line and along the gate line. As shown in the optical images in the insets of Fig. 5c, the CLSE panel has different areas with three different pixel structures and aperture ratios (ARs), i.e., the CLSE structure without the BM (60%), the CL structure with the SBM (52%), and the conventional structure with the MBM (38%). The optical images in the inset of Fig. 5b clearly indicate the elimination of the BM from the CLSE structure and the MBM in the conventional structure. The ratios of the bright area in the CLSE and conventional pixels shown in the red dotted square appear higher than the aperture ratios because the pixel and common electrodes are invisible due to the brightness. The brightness and contrast ratio in each area increase with increasing Vd; the ratios for the CLSE structure without the BM are approximately 160% those of the conventional structure with the MBM, reflecting the difference in aperture ratio.

Figure 6 indicates the effect of bias temperature stress (BTS) on the TFT characteristics. As the stressing time, tS, of the positive gate stress voltage, Vst =  + 77 V, increases from 0 to 3600 s, the transfer (Id-Vg) curve shifts in the positive direction (Fig. 6a). Vth is defined as Vg at which Id = 10−12 A and ΔVth is defined as the Vth shift from the initial value via BTS. As shown in Fig. 6b, ΔVth increases logarithmically with increasing tS: ΔVth = 2.17 + 4.93 × log (tS). The mechanism behind the gate-stress-induced Vth shift is electron tunnel injection from the a-Si:H semiconductor into the SiOx gate insulator. For confirmation, ΔVth of MNOS TFTs with different SiOx thicknesses is plotted as a function of the electric field applied to the SiOx layer in Fig. 6c. Here, the thickness of the SiOx was varied (5, 10, 20, 50 nm), while the SiN thickness was fixed at 200 nm. The electric field applied to SiOx, Eox, was calculated using the following equation,

Effect of bias temperature stress (BTS) on TFT characteristics. (a) The transfer (Id–Vg) curve shifts in the positive direction with positive gate bias stress of Vst =  + 77 V over the duration of 0–3600 s. (b) ΔVth, defined as the Vth shift from the initial value via BTS, increases logarithmically with increasing tS, following ΔVth = 2.17 + 4.93 × log (tS). (c) ΔVth of MNOS TFTs with different SiOx thicknesses from 5 to 50 nm as a function of the electric field applied to the SiOx layer.

Figure 7a shows the effect of back-channel oxidation (BCO) and passivation (PAS) on the Id-Vg characteristics of the MNOS TFT. The Id-Vg curve with Vth = 5.1 V is further enhanced to Vth = 10.9 V after BCO, although there is a slight degradation of the slope of the current increase in the sub-threshold region. The slope recovers after PAS without any change to the enhanced characteristics

(a) Effect of back-channel oxidation (BCO) and passivation (PAS) on Id–Vg characteristics of MNOS TFT. (b) Vth and Vth standard deviation, σVth, after BTS and after BCO without BTS treatments and (c) SiOX thickness as a function of position along gate-line, x.

The advantage of BCO over BTS is the uniformity of the enhanced characteristics; Fig. 7b shows the distribution of the enhanced Vth as a function of position along gate-line, x, for the MNOS TFTs connected with a 90-mm-long gate line in the TFT substrate after BTS and BCO treatments. The average value of Vth and the standard deviation, σVth, for pristine TFTs before BTS or BCO, are 5.1 V and 0.35 V, respectively. After BCO, Vth is uniformly enhanced, with an average Vth = 11 V and σVth = 0.4 V without increasing σVth. On the other hand, after BTS, Vth is nonuniformly enhanced with an average Vth = 9.3 V and σVth of 1.4 V. In particular, Vth increases linearly as a function of position along gate-line, x. As the gate SiOx thickness linearly decreases, from (54 nm) to (47 nm) with increasing x as shown in Fig. 7c, the increase in ΔVth after BTS with x is due to increase in the electric field applied to SiOx as shown in Fig. 6c and Eq.

It has been shown that the Vth of the MNOS TFT is independent of the gate SiOx thickness when the thickness is more than 5 nm8a, Vth of the MNOS TFT with the BCO treatment becomes almost independent of the BCO SiOx thickness. As shown in the inset, the thickness of BCO SiOx composed of oxidized a-Si:H linearly increases with BCO processing time, and the Vth increase almost saturates at a BCO SiOx thickness greater than 5 nm. Therefore, the enhanced MNOS TFT after BCO has a uniformly high Vth that is robust to thickness fluctuations of the gate and BCO SiOx layers. BCO also has an advantage over BTS in terms of the stability of Vth as shown in Fig. 8b, which plots the annealing time dependence of Vth for BCO and BTS. In this experiment, the stoichiometry (x) of the gate SiOx was 1.78 for BTS and 1.78 and 1.9 for BCO. The annealing temperature in the N2 atmosphere was 200 °C. In the case of BTS, Vth decreased to the pristine value after approximately 5 h of annealing, while Vth decreased more slowly in the case of BCO. In particular, the annealing time required for Vth to fall to 7 V was 7.5 times longer than that of BTS. Increasing the stoichiometry (x) of the gate SiOx dramatically improved the BCO-enhanced Vth to as much as 11 V, which was stably maintained after 24 h of annealing at 200 °C.

(a) Dependence of Vth on thickness of back-channel oxidized (BCO) SiOX. The inset shows the SiOx thickness dependence on the BCO process time for RF powers of 200 W and 500 W. (b) Stability of Vth as a function of annealing time for three different TFTs with gate SiOx stoichiometry, x = 1.78 and bias temperature stress (BTS), x = 1.78 and BCO, and x = 1.9 and BCO. The temperature of annealing in the N2 atmosphere was 200 °C. (c) Band diagram of back-channel oxidized MNOS TFT. The red arrows show the electric dipoles at the SiOX/a-Si:H and a-Si:H/BCO SiOX interfaces.

A schematic band model for the MNOS TFT with the BCO treatment and the sectional structure of the interface between the a-Si:H and gate and BCO SiOx are shown in Fig. 8c. The uniformly high Vth that is independent of SiOx thickness is due to the dipoles generated at the channel and back-channel interfaces between a-Si:H and SiOx8 of reference