tft display structure quotation

A thin-film-transistor liquid-crystal display (TFT LCD) is a variant of a liquid-crystal display that uses thin-film-transistor technologyactive matrix LCD, in contrast to passive matrix LCDs or simple, direct-driven (i.e. with segments directly connected to electronics outside the LCD) LCDs with a few segments.

In February 1957, John Wallmark of RCA filed a patent for a thin film MOSFET. Paul K. Weimer, also of RCA implemented Wallmark"s ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET. It was made with thin films of cadmium selenide and cadmium sulfide. The idea of a TFT-based liquid-crystal display (LCD) was conceived by Bernard Lechner of RCA Laboratories in 1968. In 1971, Lechner, F. J. Marlowe, E. O. Nester and J. Tults demonstrated a 2-by-18 matrix display driven by a hybrid circuit using the dynamic scattering mode of LCDs.T. Peter Brody, J. A. Asars and G. D. Dixon at Westinghouse Research Laboratories developed a CdSe (cadmium selenide) TFT, which they used to demonstrate the first CdSe thin-film-transistor liquid-crystal display (TFT LCD).active-matrix liquid-crystal display (AM LCD) using CdSe TFTs in 1974, and then Brody coined the term "active matrix" in 1975.high-resolution and high-quality electronic visual display devices use TFT-based active matrix displays.

The liquid crystal displays used in calculators and other devices with similarly simple displays have direct-driven image elements, and therefore a voltage can be easily applied across just one segment of these types of displays without interfering with the other segments. This would be impractical for a large display, because it would have a large number of (color) picture elements (pixels), and thus it would require millions of connections, both top and bottom for each one of the three colors (red, green and blue) of every pixel. To avoid this issue, the pixels are addressed in rows and columns, reducing the connection count from millions down to thousands. The column and row wires attach to transistor switches, one for each pixel. The one-way current passing characteristic of the transistor prevents the charge that is being applied to each pixel from being drained between refreshes to a display"s image. Each pixel is a small capacitor with a layer of insulating liquid crystal sandwiched between transparent conductive ITO layers.

The circuit layout process of a TFT-LCD is very similar to that of semiconductor products. However, rather than fabricating the transistors from silicon, that is formed into a crystalline silicon wafer, they are made from a thin film of amorphous silicon that is deposited on a glass panel. The silicon layer for TFT-LCDs is typically deposited using the PECVD process.

Polycrystalline silicon is sometimes used in displays requiring higher TFT performance. Examples include small high-resolution displays such as those found in projectors or viewfinders. Amorphous silicon-based TFTs are by far the most common, due to their lower production cost, whereas polycrystalline silicon TFTs are more costly and much more difficult to produce.

The twisted nematic display is one of the oldest and frequently cheapest kind of LCD display technologies available. TN displays benefit from fast pixel response times and less smearing than other LCD display technology, but suffer from poor color reproduction and limited viewing angles, especially in the vertical direction. Colors will shift, potentially to the point of completely inverting, when viewed at an angle that is not perpendicular to the display. Modern, high end consumer products have developed methods to overcome the technology"s shortcomings, such as RTC (Response Time Compensation / Overdrive) technologies. Modern TN displays can look significantly better than older TN displays from decades earlier, but overall TN has inferior viewing angles and poor color in comparison to other technology.

Most TN panels can represent colors using only six bits per RGB channel, or 18 bit in total, and are unable to display the 16.7 million color shades (24-bit truecolor) that are available using 24-bit color. Instead, these panels display interpolated 24-bit color using a dithering method that combines adjacent pixels to simulate the desired shade. They can also use a form of temporal dithering called Frame Rate Control (FRC), which cycles between different shades with each new frame to simulate an intermediate shade. Such 18 bit panels with dithering are sometimes advertised as having "16.2 million colors". These color simulation methods are noticeable to many people and highly bothersome to some.gamut (often referred to as a percentage of the NTSC 1953 color gamut) are also due to backlighting technology. It is not uncommon for older displays to range from 10% to 26% of the NTSC color gamut, whereas other kind of displays, utilizing more complicated CCFL or LED phosphor formulations or RGB LED backlights, may extend past 100% of the NTSC color gamut, a difference quite perceivable by the human eye.

In 2004, Hydis Technologies Co., Ltd licensed its AFFS patent to Japan"s Hitachi Displays. Hitachi is using AFFS to manufacture high end panels in their product line. In 2006, Hydis also licensed its AFFS to Sanyo Epson Imaging Devices Corporation.

A technology developed by Samsung is Super PLS, which bears similarities to IPS panels, has wider viewing angles, better image quality, increased brightness, and lower production costs. PLS technology debuted in the PC display market with the release of the Samsung S27A850 and S24A850 monitors in September 2011.

TFT dual-transistor pixel or cell technology is a reflective-display technology for use in very-low-power-consumption applications such as electronic shelf labels (ESL), digital watches, or metering. DTP involves adding a secondary transistor gate in the single TFT cell to maintain the display of a pixel during a period of 1s without loss of image or without degrading the TFT transistors over time. By slowing the refresh rate of the standard frequency from 60 Hz to 1 Hz, DTP claims to increase the power efficiency by multiple orders of magnitude.

Due to the very high cost of building TFT factories, there are few major OEM panel vendors for large display panels. The glass panel suppliers are as follows:

External consumer display devices like a TFT LCD feature one or more analog VGA, DVI, HDMI, or DisplayPort interface, with many featuring a selection of these interfaces. Inside external display devices there is a controller board that will convert the video signal using color mapping and image scaling usually employing the discrete cosine transform (DCT) in order to convert any video source like CVBS, VGA, DVI, HDMI, etc. into digital RGB at the native resolution of the display panel. In a laptop the graphics chip will directly produce a signal suitable for connection to the built-in TFT display. A control mechanism for the backlight is usually included on the same controller board.

The low level interface of STN, DSTN, or TFT display panels use either single ended TTL 5 V signal for older displays or TTL 3.3 V for slightly newer displays that transmits the pixel clock, horizontal sync, vertical sync, digital red, digital green, digital blue in parallel. Some models (for example the AT070TN92) also feature input/display enable, horizontal scan direction and vertical scan direction signals.

New and large (>15") TFT displays often use LVDS signaling that transmits the same contents as the parallel interface (Hsync, Vsync, RGB) but will put control and RGB bits into a number of serial transmission lines synchronized to a clock whose rate is equal to the pixel rate. LVDS transmits seven bits per clock per data line, with six bits being data and one bit used to signal if the other six bits need to be inverted in order to maintain DC balance. Low-cost TFT displays often have three data lines and therefore only directly support 18 bits per pixel. Upscale displays have four or five data lines to support 24 bits per pixel (truecolor) or 30 bits per pixel respectively. Panel manufacturers are slowly replacing LVDS with Internal DisplayPort and Embedded DisplayPort, which allow sixfold reduction of the number of differential pairs.

The bare display panel will only accept a digital video signal at the resolution determined by the panel pixel matrix designed at manufacture. Some screen panels will ignore the LSB bits of the color information to present a consistent interface (8 bit -> 6 bit/color x3).

With analogue signals like VGA, the display controller also needs to perform a high speed analog to digital conversion. With digital input signals like DVI or HDMI some simple reordering of the bits is needed before feeding it to the rescaler if the input resolution doesn"t match the display panel resolution.

Kawamoto, H. (2012). "The Inventors of TFT Active-Matrix LCD Receive the 2011 IEEE Nishizawa Medal". Journal of Display Technology. 8 (1): 3–4. Bibcode:2012JDisT...8....3K. doi:10.1109/JDT.2011.2177740. ISSN 1551-319X.

Brody, T. Peter; Asars, J. A.; Dixon, G. D. (November 1973). "A 6 × 6 inch 20 lines-per-inch liquid-crystal display panel". 20 (11): 995–1001. Bibcode:1973ITED...20..995B. doi:10.1109/T-ED.1973.17780. ISSN 0018-9383.

K. H. Lee; H. Y. Kim; K. H. Park; S. J. Jang; I. C. Park & J. Y. Lee (June 2006). "A Novel Outdoor Readability of Portable TFT-LCD with AFFS Technology". SID Symposium Digest of Technical Papers. AIP. 37 (1): 1079–82. doi:10.1889/1.2433159. S2CID 129569963.

Kim, Sae-Bom; Kim, Woong-Ki; Chounlamany, Vanseng; Seo, Jaehwan; Yoo, Jisu; Jo, Hun-Je; Jung, Jinho (15 August 2012). "Identification of multi-level toxicity of liquid crystal display wastewater toward Daphnia magna and Moina macrocopa". Journal of Hazardous Materials. Seoul, Korea; Laos, Lao. 227–228: 327–333. doi:10.1016/j.jhazmat.2012.05.059. PMID 22677053.

Thin-Film Transistor Liquid Crystal Displays use thin-film transistors to control the voltage applied to the liquid crystal layer at a sub-pixel level. The structure of TFT LCDs consists of a TFT “sandwich” and a BLU (Backlight Unit). A typical configuration is shown in the schematic diagram below.

Firstly, between the back and front polarizers, TFT LCD cells are made with two glass substrates – one for color filters, the other for a TFT array – and a liquid crystal layer sandwiched in between.

For normally black TFT LCDs, if we follow along a piece of light setting off from its backlight source, it will bea)guided uniformly by LGP;b)reflected and enhanced by BEF and DBEF;c)polarized by the back polarizer;d)polarization changed by twisted LC under the voltage applied by TFT arrays;e)“tinted” red/green/blue by corresponding color filter of the subpixel;f)let through the front polarizer by matched polarization; andg)finally, it will reach the surface and appears in viewer’s eyes.

For normally white panels, processd)will be the opposite – known as the polarization rotation effect, light is twisted in a voltage-off stage and can pass through the front polarizer by default, thus displaying white normally. However, when the voltage applied increases, this polarization rotation effect would be gradually diminished. And the light would not be able to pass through the front polarizer anymore without changing its polarization. In this way, certain pixels will appear in different colors.

Normally black LCDs have higher contrast and wider viewing angles without grayscale inversion phenomenon compared to their normally white relatives. And whether TFT LCDs are normally black or white depends on their LC switching mode:

2Chen, HW., Lee, JH., Lin, BY.et al.Liquid crystal display and organic light-emitting diode display: present status and future perspectives.Light Sci Appl7,17168 (2018).https://doi.org/10.1038/lsa.2017.168

As previously mentioned, TN mode functions with the polarization rotation effect. Under traditional TN/VA display mode, the liquid crystal molecules are vertically arranged, with a relatively narrow visual angle. When an external force is exerted on the screen, the liquid crystal molecular structure will sink in a herringbone pattern to slowly recover – a pattern called vertical alignment. Therefore, an evident “water ripple” usually appears when the display surface is touched and impacts the user experience. In comparison, the VA mode provides higher contrast. And MVA (multi-domain vertical alignment) is an upgraded version of VA with improved viewing angles.

This 240x320 resolution LCD TFT is a standard display with 8-bit/16-bit Parallel interface, offering 262K colors, 2.8V power supply, and a 12:00 optimal view. This Liquid Crystal Display has a built-in ILI9341 controller, hot-bar solder connection, has a 4-wire resistive touchscreen and screen printed icons featured on the touch panel. The display is RoHS compliant and has been discontinued. Purchase now while stock is still available!

Choose from a wide selection of interface options or talk to our experts to select the best one for your project. We can incorporate HDMI, USB, SPI, VGA and more into your display to achieve your design goals.

Equip your display with a custom cut cover glass to improve durability. Choose from a variety of cover glass thicknesses and get optical bonding to protect against moisture and debris.

This premium TFT LCD display has a 1024x600 resolution screen with MVA technology, which delivers higher contrast and improved viewing angles up to 75° from any direction. The 24-bit true color TFT display is RoHS compliant with RGB interface, and has a 10-point multi-touch capacitive touchscreen.

Choose from a wide selection of interface options or talk to our experts to select the best one for your project. We can incorporate HDMI, USB, SPI, VGA and more into your display to achieve your design goals.

Equip your display with a custom cut cover glass to improve durability. Choose from a variety of cover glass thicknesses and get optical bonding to protect against moisture and debris.

Figures 3a–d show optical and SEM (scanning electron microscopy) images of the fabricated CL and CLSE pixel structures. Each structure has the same pixel size (80 μm × 240 μm) and minimum pattern size (5 μm). As shown in Fig. 3d, the white line patterns are the ITO interdigitated pixel and common electrodes. They are well connected to the source electrode and gate line via through holes, and the common electrodes at both ends cover the underlying data lines to prevent electrical noise from being applied to the LC layer. As will be shown later, this noise shield electrode (SE) is what makes the black matrix above the data line unnecessary

Optical and SEM (scanning electron microscopy) images of fabricated (a, b) CL and (c, d) CLSE pixel structures. The five white line patterns in (d) are the ITO interdigitated pixel and common electrodes. (e) Images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel. (f) The three-black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM) and (g) optical images of pixels without BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines).

Figure 3e shows images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel fabricated in our laboratory, (f) the three black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM), and (g) optical images of panel areas without the BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines). As can be seen in the image from the normal direction, the brightness and contrast of the display area with the top BM and middle BM patterns are almost the same, but the contrast of the display area without the BM is relatively lower because of the lower darkness level of the LC off pixels indicating “HITACHI”. As shown in Fig. 3g, this is due to light leaking through the aperture between the data line and adjacent common lines. Therefore, in the CL structure, the BM on the drain line is necessary to obtain a high contrast ratio by shielding light leakage. This is the same as in the conventional structure. On the contrary, there is no light leakage along the gate line through the gaps between the gate line and edges of the pixel/common electrodes, as is clearly shown in Fig. 3g. This is a unique advantage of the CL structure because the conventional structure must shield these gaps with the BM to prevent light leakage. The suppression of light leakage along the gate line in the CL structure is due to the driving scheme (see Fig. 2b,a for a comparison with the conventional structure). During the holding period (tOFF) in the conventional structure, regardless of the pixel voltage, Vp (including Vp = 0), nonzero Vgp and Vgc are always applied to keep the TFT off, and these voltages are applied to the LC layer, inducing light leakage as reported in

Figure 4a shows the gate voltage (Vg) dependence of the panel brightness, while the inset shows that of the TFT current (transfer characteristics). The gray curves are for the conventional IPS TFT-LCD with the TFT before enhancement, the common line, and the matrix BM (MBM) shown at the top of Fig. 3f. The blue curves are for the proposed CL structure with the enhanced TFT and the stripe BM (SBM) shown in the middle of Fig. 3f. In this case, enhanced TFT characteristics were obtained by using an MNOS TFT without back-channel oxidation that was enhanced by the BTS process. In both structures, the threshold voltages for panel brightness, defined by extrapolating the straight part of the brightness curves, reflect those of the TFT transfer curves defined as Vg at a drain current of 10−12 A, and they are well matched to be 4 V and 9 V, respectively. The maximum brightness for the CL structure is 137% higher than that for the conventional structure, which is due to the increase in the aperture ratio from 38 to 52% that results from the elimination of the common line and the BM covering the gate line.

(a) Dependence of panel brightness and TFT current on gate voltage for the conventional pixel structure of 38% aperture ratio (AR) with matrix black matrix (MBM) over both drain and gate lines and proposed CL pixel structure of 52% AR with strip black matrix (SBM) over only the drain lines. Transfer characteristics before and after bias temperature stress (BTS) treatment are shown in the inset. (b) Charging and (c) holding characteristics of enhanced TFT of the CL structure with gate as a common line. Vg and Vd in the TFT ON state are 30 V and +/−7 V, respectively.

To estimate the charging and holding characteristics of the MNOS-enhanced TFT in the panel, the gate TFT ON and OFF time dependences of the panel brightness were measured (Fig. 4b,c). The charging characteristics in Fig. 4b are plotted as a function of tON at tOFF = 16.6 ms, Vg = 30 V, and Vd = ± 7 V. The holding characteristics in Fig. 4c are plotted as a function of tOFF at tON = 34 μs. 95.1% charging at tON = 34 μs and 95.3% holding at tOFF = 16.6 ms indicate that the enhanced TFT has sufficient charging and holding performance to drive a standard VGA (640 × 480 pixels) panel (the number of scanning lines is estimated as tOFF/tON = 16.6/0.034 = 488).

To confirm the driving conditions for the CL structure without the BM along the gate line (with the SBM), the tOFF dependence of the contrast ratio (CR) in the CL panel was further investigated as shown in Fig. 5a, where CR is plotted as a function of tOFF for the CL panels with the matrix BM (MBM) and the strip BM (SBM). The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. The SBM and MBM panels keep CR higher than 240 with tOFF > 16.6 ms, the frame period of a display panel without flicker being noticeable to the human eye. both panels decrease CR when tOFF is less than 16.6 ms; the CR of the SBM panel decreases faster than the CR of the MBM panel. As shown in the inset, the decrease in CR was due to the increase in dark-state brightness with decreasing tOFF as light leakage increases along the gate line. This light leakage is induced by the voltage Vgp = Vgc = VgON = 30 V applied only for 34 μs during the TFT ON (charging) state, which is 1/488th the duration, tOFF = 16.6 ms, of the TFT OFF (holding) state with Vgp = Vgc = VgOFF = 0 V, but the ratio increases with decreasing tOFF and becomes effective enough to switch on LC layer and induce light leakage. However, it should be stressed again that the CL panel with the normal holding (TFT OFF) time of 16.6 ms does not suffer from the light leakage along the gate line, so the aperture ratio can be increased by removing the BM along the gate line.

(a) Contrast ratio (CR) for CL panels with matrix BM (MBM) and stripe BM (SBM) plotted as a function of tOFF. The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. Vd (= VLC) dependence of (b) brightness and (c) contrast ratio of the CLSE panel. Insets of (b): optical images indicating the elimination of the BM from the CLSE structure (upper left) and the MBM in the conventional structure (lower right). Insets of (c): CLSE panel composed of different areas with three different pixel structures and aperture ratios (ARs), i.e., CLSE structure without BM (60%), CL structure with SBM (52%), and conventional structure with MBM (38%).

Figure 5b,c shows the Vd (= VLC) dependence of the brightness and contrast ratio of the CLSE panel without a BM along the drain line and along the gate line. As shown in the optical images in the insets of Fig. 5c, the CLSE panel has different areas with three different pixel structures and aperture ratios (ARs), i.e., the CLSE structure without the BM (60%), the CL structure with the SBM (52%), and the conventional structure with the MBM (38%). The optical images in the inset of Fig. 5b clearly indicate the elimination of the BM from the CLSE structure and the MBM in the conventional structure. The ratios of the bright area in the CLSE and conventional pixels shown in the red dotted square appear higher than the aperture ratios because the pixel and common electrodes are invisible due to the brightness. The brightness and contrast ratio in each area increase with increasing Vd; the ratios for the CLSE structure without the BM are approximately 160% those of the conventional structure with the MBM, reflecting the difference in aperture ratio.

Figure 6 indicates the effect of bias temperature stress (BTS) on the TFT characteristics. As the stressing time, tS, of the positive gate stress voltage, Vst =  + 77 V, increases from 0 to 3600 s, the transfer (Id-Vg) curve shifts in the positive direction (Fig. 6a). Vth is defined as Vg at which Id = 10−12 A and ΔVth is defined as the Vth shift from the initial value via BTS. As shown in Fig. 6b, ΔVth increases logarithmically with increasing tS: ΔVth = 2.17 + 4.93 × log (tS). The mechanism behind the gate-stress-induced Vth shift is electron tunnel injection from the a-Si:H semiconductor into the SiOx gate insulator. For confirmation, ΔVth of MNOS TFTs with different SiOx thicknesses is plotted as a function of the electric field applied to the SiOx layer in Fig. 6c. Here, the thickness of the SiOx was varied (5, 10, 20, 50 nm), while the SiN thickness was fixed at 200 nm. The electric field applied to SiOx, Eox, was calculated using the following equation,

Effect of bias temperature stress (BTS) on TFT characteristics. (a) The transfer (Id–Vg) curve shifts in the positive direction with positive gate bias stress of Vst =  + 77 V over the duration of 0–3600 s. (b) ΔVth, defined as the Vth shift from the initial value via BTS, increases logarithmically with increasing tS, following ΔVth = 2.17 + 4.93 × log (tS). (c) ΔVth of MNOS TFTs with different SiOx thicknesses from 5 to 50 nm as a function of the electric field applied to the SiOx layer.

Figure 7a shows the effect of back-channel oxidation (BCO) and passivation (PAS) on the Id-Vg characteristics of the MNOS TFT. The Id-Vg curve with Vth = 5.1 V is further enhanced to Vth = 10.9 V after BCO, although there is a slight degradation of the slope of the current increase in the sub-threshold region. The slope recovers after PAS without any change to the enhanced characteristics

(a) Effect of back-channel oxidation (BCO) and passivation (PAS) on Id–Vg characteristics of MNOS TFT. (b) Vth and Vth standard deviation, σVth, after BTS and after BCO without BTS treatments and (c) SiOX thickness as a function of position along gate-line, x.

The advantage of BCO over BTS is the uniformity of the enhanced characteristics; Fig. 7b shows the distribution of the enhanced Vth as a function of position along gate-line, x, for the MNOS TFTs connected with a 90-mm-long gate line in the TFT substrate after BTS and BCO treatments. The average value of Vth and the standard deviation, σVth, for pristine TFTs before BTS or BCO, are 5.1 V and 0.35 V, respectively. After BCO, Vth is uniformly enhanced, with an average Vth = 11 V and σVth = 0.4 V without increasing σVth. On the other hand, after BTS, Vth is nonuniformly enhanced with an average Vth = 9.3 V and σVth of 1.4 V. In particular, Vth increases linearly as a function of position along gate-line, x. As the gate SiOx thickness linearly decreases, from (54 nm) to (47 nm) with increasing x as shown in Fig. 7c, the increase in ΔVth after BTS with x is due to increase in the electric field applied to SiOx as shown in Fig. 6c and Eq. 1.

It has been shown that the Vth of the MNOS TFT is independent of the gate SiOx thickness when the thickness is more than 5 nm8a, Vth of the MNOS TFT with the BCO treatment becomes almost independent of the BCO SiOx thickness. As shown in the inset, the thickness of BCO SiOx composed of oxidized a-Si:H linearly increases with BCO processing time, and the Vth increase almost saturates at a BCO SiOx thickness greater than 5 nm. Therefore, the enhanced MNOS TFT after BCO has a uniformly high Vth that is robust to thickness fluctuations of the gate and BCO SiOx layers. BCO also has an advantage over BTS in terms of the stability of Vth as shown in Fig. 8b, which plots the annealing time dependence of Vth for BCO and BTS. In this experiment, the stoichiometry (x) of the gate SiOx was 1.78 for BTS and 1.78 and 1.9 for BCO. The annealing temperature in the N2 atmosphere was 200 °C. In the case of BTS, Vth decreased to the pristine value after approximately 5 h of annealing, while Vth decreased more slowly in the case of BCO. In particular, the annealing time required for Vth to fall to 7 V was 7.5 times longer than that of BTS. Increasing the stoichiometry (x) of the gate SiOx dramatically improved the BCO-enhanced Vth to as much as 11 V, which was stably maintained after 24 h of annealing at 200 °C.

(a) Dependence of Vth on thickness of back-channel oxidized (BCO) SiOX. The inset shows the SiOx thickness dependence on the BCO process time for RF powers of 200 W and 500 W. (b) Stability of Vth as a function of annealing time for three different TFTs with gate SiOx stoichiometry, x = 1.78 and bias temperature stress (BTS), x = 1.78 and BCO, and x = 1.9 and BCO. The temperature of annealing in the N2 atmosphere was 200 °C. (c) Band diagram of back-channel oxidized MNOS TFT. The red arrows show the electric dipoles at the SiOX/a-Si:H and a-Si:H/BCO SiOX interfaces.

A schematic band model for the MNOS TFT with the BCO treatment and the sectional structure of the interface between the a-Si:H and gate and BCO SiOx are shown in Fig. 8c. The uniformly high Vth that is independent of SiOx thickness is due to the dipoles generated at the channel and back-channel interfaces between a-Si:H and SiOx8 of reference

TFT-LCD technology is based on semiconductor IC manufacturing processes, and is unique in that it uses glass substrates rather than traditional silicon wafers. For the TFT manufacturing process, thin film formation, such as CVD and PVD processes, is a very important part. The ODF process has been developed for the assembly of color filters and TFT substrates, and is used in large size LCDs.

First of all, the movement and arrangement of liquid crystal molecules need electrons to drive, so in the carrier of liquid crystal – TFT glass, there must be able to conduct the part to control the movement of liquid crystal, here will use ITO (Indium TIn Oxide, transparent conductive metal) to do this thing. ITO is transparent, also known as thin film conductive crystal so that it will not block the backlight.

The different arrangement of liquid crystal molecules and the rapid movement changes to ensure that each pixel accurately display the corresponding color, and the image changes precisely and quickly, which requires precision control of the liquid crystal molecules. ITO film requires special processing, as if printed circuitry on a PCB board, drawing conductive lines throughout the LCD board.

For array panels with back-channel etched TFT structure.The main process can be divided into 5 steps (5 lightings) according to the sequence of the layers to be made and the interrelationship between the layers.

Photolithography is the process of copying Mask graphic structures onto the glass substrate to be etched. There are three main processes: photoresist coating, exposure, and development

The process includes: PECVD triple layer continuous film formation, island lithography, island dry lithography and other processes. After these processes, the final amorphous silicon island for TFT is formed on the glass substrate. The graphics obtained after the process is completed are shown in the following figure.

Specific processes include: S/D metal layer sputtering into a film, S/D lithography, S/D wet lithography, channel dry lithography and other processes. After these processes, the source, drain, channel and data lines of the TFT are finally formed on the glass substrate. At this point, the TFT has been produced. The graphics obtained after the process is completed are shown in the following figure.

The process includes PECVD, photolithography, and dry lithography of vias. After these processes, the final TFT channel protective insulation layer and guide through the hole are formed on the glass substrate. The graphics obtained after the process is completed are shown in the following figure.

Pre-Tilt Angle (Pre-TIlt Angle or TBA: Tilt Bias Angle) characteristic refers to the arrangement of liquid crystal molecules on the mating film is not parallel to the film surface, but one end of the molecule in the friction direction relative to the film surface has a certain warp, the stilt angle is called pre-tilt angle. If there is no pre-tilt angle, under the external electric field, the liquid crystal molecules can stand up randomly from two directions, which will cause poor display.

Assembly is the combination of backlight, screen, control circuit board, and touch screen and other components together to form a complete display module. Assembly is generally done by hand, and skilled workers are very important here.

Compared with ordinary LCDs, TFT LCDs provide very clear images/text with shorter response times. TFT LCDs are increasingly being used to bring better visual effects to products.

TFT stands for “thin film transistor”. The transistor of a color TFT LCD is composed of a thin film of amorphous silicon deposited on glass. It acts as a control valve to provide the appropriate voltage to the liquid crystal for each sub-pixel. This is why TFT LCDs are also known as active matrix displays.

TFT LCDs have a liquid crystal layer between a glass substrate formed by the TFT and transparent pixel electrodes and another glass substrate with a color filter (RGB) and a transparent counter electrode. Each pixel in the active matrix is paired with a transistor that includes a capacitor, which gives each sub-pixel the ability to retain its charge without sending a charge every time it needs to be replaced. This means that TFT LCDs are more responsive.

To understand how a TFT LCD works, we must first grasp the concept of a field effect transistor (FET), which is a transistor that uses an electric field to control the flow of current. It is a component with three terminals: source, gate and drain. fet controls the flow of current by applying a voltage to the gate, thereby changing the conductivity between the drain and source.

Using the FET, we can build a circuit as follows. The data bus sends a signal to the source of the FET, and when SEL SIGNAL applies a voltage to the gate, a drive voltage is generated on the TFT LCD panel. A sub-pixel is lit. A TFT LCD display contains thousands or millions of such driver circuits.

Color TFT LCD from 1.8 inch ~ 15 inch, there are different resolutions and interfaces. How to choose the right TFT LCD, you can refer to the previous article “LCD | How to choose a liquid crystal display module

This bar-type EVE TFT development kit includes everything to get started prototyping and building with the 480x128 accelerated display module. This development kit includes the bar-type display module with the accelerator board connected to an EVE Breakout Board connected to a Seeeduino loaded with demo code. Once you receive the development kit, all you need to do to get the demo kit running is check the connections and plug in the included USB cable.

This paper proposes a new driving structure of the thin-film transistor liquid crystal display (TFT-LCD) that can yield a high image quality with a reduction in the number of source driver ICs for use in narrow-bezel notebook displays with ultra-high definition (UHD) and a high frame rate. The proposed driving structure improves the pixel charging ratio by reducing the RC loadings of TFTs of de-multiplexers on data lines and extending the available row-line time for pixel charging. A new gate driver circuit that generates two output waveforms in a single stage is presented to reduce the cost and occupied layout area of gate driver ICs, enabling the realization of high-resolution displays with a narrow bezel. To verify the feasibility of the proposed driving structure, a 12.3-inch panel with UHD (3840 × 2160) and a frame rate of 120 Hz is fabricated. Experimental results demonstrate that the proposed driving structure yields a measured pixel charging ratio of more than 97.09% for a heavy loading pattern with a gray level of 255. Following an accelerated lifetime test, the measured waveforms of the proposed gate driver circuit are stable without any malfunction, demonstrating its high reliability. Therefore, the proposed driving structure and the gate driver circuit are highly suitable for use in UHD TFT-LCD notebook applications.

Organic Light-Emitting Diodes, or OLEDs is a technology that has been around for several decades. In the early days of OLED technology, the focus was on developing simple, low-cost displays....

Organic Light-Emitting Diodes, or OLEDs is a technology that has been around for several decades. In the early days of OLED technology, the focus was on developing simple, low-cost displays....

OLEDs(Organic Light-Emitting Diodes) are becoming increasingly popular in the world of displays and lighting. The reason for their popularity is simple: the basic structure of an OLED is relatively simple,...

OLEDs(Organic Light-Emitting Diodes) are becoming increasingly popular in the world of displays and lighting. The reason for their popularity is simple: the basic structure of an OLED is relatively simple,...

Organic Light Emitting Diodes (OLEDs) are a type of technology that is taking the display and lighting industry by storm. They are increasingly being used in the latest smartphones, televisions,...

Organic Light Emitting Diodes (OLEDs) are a type of technology that is taking the display and lighting industry by storm. They are increasingly being used in the latest smartphones, televisions,...

Color LCD module PS302-04043-00 is composed of the amorphous silicon thin film transistor liquid crystal display (a-Si TFT LCD) panel structure with driver LSIs for driving the TFT (Thin Film Transistor) array and a dual mode backlight. The a-Si TFT LCD panel structure is injected liquid crystal material into a narrow gap between the TFT array glass substrate and a color-filter glass substrate. Color (Red, Green, Blue) data signals from a host system (e.g. signal generator, etc.) are modulated into best form for active matrix system by a signal processing board, and sent to the driver LSIs which drive the individual TFT arrays. The TFT array as an electro-optical switch regulates the amount of transmitted light from the backlight assembly, when it is controlled by data signals. Color images are created by regulating the amount of transmitted light through the TFT array of red, green and blue dots.

A TN or Twisted Nematic TFT LCD is a cost-effective high performance LCD. It offers good brightness performance and fast response times. However, it suffers in one key area and that is its viewing cone. TN LCD’s typically have three good viewing angle directions. In these directions the image is typically clear and colors are consistent up to 80 degrees from the center of the LCD. The remaining viewing direction is usually good through 40-50 degrees from center. Afterwards, the image is likely to invert, almost appearing like an x-ray.

Liquid crystal refers to the intermediate status of a substance between solid (crystal) and liquid. When crystals with a high level of order in molecular sequence are melted, they generally turn liquid, which has fluidity but no such order at all. However, thin bar-shaped organic molecules, when they are melted, keep their order in a molecular direction although they lose it in molecular positions. In the state in which molecules are in a uniform direction, they also have refractive indices, dielectric constants and other physical characteristics similar to those of crystals, depending on their direction, even though they are liquid. This is why they are called liquid crystal. The diagram below shows the structure of 5CB (4-pentyl-4’-Cyanobiphenyl) as an example of liquid crystal molecules.

A liquid crystal display (LCD) has liquid crystal material sandwiched between two sheets of glass. Without any voltage applied between transparent electrodes, liquid crystal molecules are aligned in parallel with the glass surface. When voltage is applied, they change their direction and they turn vertical to the glass surface. They vary in optical characteristics, depending on their orientation. Therefore, the quantity of light transmission can be controlled by combining the motion of liquid crystal molecules and the direction of polarization of two polarizing plates attached to the both outer sides of the glass sheets. LCDs utilize these characteristics to display images.

An LCD consists of many pixels. A pixel consists of three sub-pixels (Red/Green/Blue, RGB). In the case of Full-HD resolution, which is widely used for smartphones, there are more than six million (1,080 x 1,920 x 3 = 6,220,800) sub-pixels. To activate these millions of sub-pixels a TFT is required in each sub-pixel. TFT is an abbreviation for "Thin Film Transistor". A TFT is a kind of semiconductor device. It serves as a control valve to provide an appropriate voltage onto liquid crystals for individual sub-pixels. A TFT LCD has a liquid crystal layer between a glass substrate formed with TFTs and transparent pixel electrodes and another glass substrate with a color filter (RGB) and transparent counter electrodes. In addition, polarizers are placed on the outer side of each glass substrate and a backlight source on the back side. A change in voltage applied to liquid crystals changes the transmittance of the panel including the two polarizing plates, and thus changes the quantity of light that passes from the backlight to the front surface of the display. This principle allows the TFT LCD to produce full-color images.