a-si active matrix tft lcd h-ips for sale

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4DLCD-35480320-CTP-IPS is a color active matrix LCD module incorporating amorphous silicon TFT (Thin Film Transistor). It is composed of a color IPS TFT-LCD panel, driver IC, FPC and a backlight unit.

This is a Raw TFT Display, it features no processor and cannot be programmed directly. It needs to be coupled with a Processor and circuitry capable of driving this type of display. For complete modules ready to go, please refer to our Intelligent Display Module products.

4DLCD-28320240-CTP-IPS is a color active matrix LCD module incorporating amorphous silicon TFT (Thin Film Transistor). It is composed of a color IPSTFT-LCD panel, driver IC, FPC and a backlight unit.

This is a Raw TFT Display, it features no processor and cannot be programmed directly. It needs to be coupled with a Processor and circuitry capable of driving this type of display. For complete modules ready to go, please refer to our Intelligent Display Module products.

From the MOSFET, the TFT was born. The TFT varies from standard MOSFETs, or bulk MOSFETs, because, as the name implies, it uses thin films. The TFT began a new era of electronics. In 1968, just six years after the first TFT development, Bernard J. Lechner of RCA shared his idea of the TFT Liquid Crystal Display (LCD), something that would boom in popularity in our modern times. The TFT LCD was then first created in 1973 at the Westinghouse Research Laboratories. These LCDs were composed of pixels controlled by transistors. In FETs, substrates were just the semiconductor material, but in manufacturing TFT LCDs, glass substrates were used so that the pixels could be displayed.

But that was not the end of TFT developments. Soon after, in 1974, T. Peter Brody, one of the developers of the TFT LCD, and Fang-Chen Luo created the first active-matrix LCD (AM LCD). An active matrix controls each pixel individually, meaning that each pixel’s respective TFT had its signal actively preserved. This opened doors to better performance and speed as displays became more complex.

Though TFTs can use a variety of materials for their semiconductor layers, silicon has become the most popular, creating the silicon-based TFT, abbreviated as Si TFT. As a semiconductor device, the TFT, as well as all FETs, use solid-state electronics, meaning that electricity flows through the structure of the semiconductor layer rather than vacuum tubes.

Due to the variety in silicon’s possible structures, the Si TFT’s characteristics can vary as well. The most common form is amorphous silicon (A-Si), which is deposited during the first step of the semiconductor fabrication process onto the substrate in low temperatures. It is most usable when hydrogenated into the form A-Si:H. This then significantly alters the properties of A-Si; without the hydrogen, the material struggles with doping (the introduction of impurities to increase mobility of charges); in the form A-Si:H, however, the semiconductor layer becomes much more photoconductive and dopable. The A-Si:H TFT was first developed in 1979 which is stable at room temperature and became the best option for AM LCDs which consequently began rising in popularity after this breakthrough.

A second potential form of silicon is the microcrystalline silicon. Though it retains a similar form to A-Si, this type of silicon also has grains of what is known as crystalline structures. Amorphous structures have a more random, less geometric shape to their network-like structures, but crystalline, on the other hand, is more structured and organized. If grown correctly, microcrystalline silicon has better electron mobility than A-Si:H and greater stability too, as it has less hydrogen within its structure. It is deposited in a similar fashion to A-Si’s deposition.

And lastly, there is polycrystalline silicon, also known as polysilicon and poly-Si. Microcrystalline silicon is the middle between A-Si and poly-Si since poly-Si’s structure is composed of many crystallites. This specific form is made by annealing the silicon material which means adding heat to alter the properties of the structure. With poly-Si, the atoms in the crystal lattice shift and move when heated, and when cooled, the structure recrystallizes.

The biggest difference between these forms, notably A-Si and poly-Si, is that charge carriers are much more mobile and the material is much more stable when it comes to using poly-Si over A-Si. When creating complicated and high-speed TFT-based displays, poly-Si’s characteristics allow for this. Yet, A-Si is still very important due to its low-leakage nature, meaning that leakage current is not lost as heavily when a dielectric insulator is not totally non-conductive.

As TFTs began to increase their presence in display technology, transparent semiconductors and electrodes became more appealing to the manufacturers. Indium tin oxide (ITO) is an example of a popular transparent oxide used for its appearance, good conductivity, and ease of deposition.

Research of the TFT with different materials has led to the application of threshold voltage, or how much voltage is needed to turn on the device. This value is greatly dependent on thickness and choice of the oxide. When it comes to the oxide, this relates back to the idea of leakage current. With thinner layers and certain types of oxide, the leakage current may be greater, but this in turn could lower threshold voltage, as leakage into the device will also increase. In order to tap into the TFT’s potential for low power consumption, the lower the threshold voltage, the better the device’s appeal.

Another branch of development that stemmed from the TFT is that of organic TFTs (OTFT). First created in 1986, OTFTs usually use solution-casting of polymers, or macromolecules. This device made people hesitant, as it tended to have a slow carrier mobility, meaning slow response times. However, researchers have carried out experimentation with the OTFT because it has potential to be applied to displays different from those that traditional TFTs are used for, such as flexible, plastic displays. This research still continues today. With its simpler processing than traditional silicon technology, the OTFT holds much potential for modern day and future technologies.

If you want to buy a new monitor, you might wonder what kind of display technologies I should choose. In today’s market, there are two main types of computer monitors: TFT LCD monitors & IPS monitors.

The word TFT means Thin Film Transistor. It is the technology that is used in LCD displays.  We have additional resources if you would like to learn more about what is a TFT Display. This type of LCDs is also categorically referred to as an active-matrix LCD.

These LCDs can hold back some pixels while using other pixels so the LCD screen will be using a very minimum amount of energy to function (to modify the liquid crystal molecules between two electrodes). TFT LCDs have capacitors and transistors. These two elements play a key part in ensuring that the TFT display monitor functions by using a very small amount of energy while still generating vibrant, consistent images.

Industry nomenclature: TFT LCD panels or TFT screens can also be referred to as TN (Twisted Nematic) Type TFT displays or TN panels, or TN screen technology.

IPS (in-plane-switching) technology is like an improvement on the traditional TFT LCD display module in the sense that it has the same basic structure, but has more enhanced features and more widespread usability.

These LCD screens offer vibrant color, high contrast, and clear images at wide viewing angles. At a premium price. This technology is often used in high definition screens such as in gaming or entertainment.

Both TFT display and IPS display are active-matrix displays, neither can’t emit light on their own like OLED displays and have to be used with a back-light of white bright light to generate the picture. Newer panels utilize LED backlight (light-emitting diodes) to generate their light hence utilizing less power and requiring less depth by design. Neither TFT display nor IPS display can produce color, there is a layer of RGB (red, green, blue) color filter in each LCD pixels to produce the color consumers see. If you use a magnifier to inspect your monitor, you will see RGB color in each pixel. With an on/off switch and different level of brightness RGB, we can get many colors.

Winner. IPS TFT screens have around 0.3 milliseconds response time while TN TFT screens responds around 10 milliseconds which makes the latter unsuitable for gaming

Winner. the images that IPS displays create are much more pristine and original than that of the TFT screen. IPS displays do this by making the pixels function in a parallel way. Because of such placing, the pixels can reflect light in a better way, and because of that, you get a better image within the display.

Winner. While the TFT LCD has around 15% more power consumption vs IPS LCD, IPS has a lower transmittance which forces IPS displays to consume more power via backlights. TFT LCD helps battery life.

Normally, high-end products, such as Apple Mac computer monitors and Samsung mobile phones, generally use IPS panels. Some high-end TV and mobile phones even use AMOLED (Active Matrix Organic Light Emitting Diodes) displays. This cutting edge technology provides even better color reproduction, clear image quality, better color gamut, less power consumption when compared to LCD technology.

This kind of touch technology was first introduced by Steve Jobs in the first-generation iPhone. Of course, a TFT LCD display can always meet the basic needs at the most efficient price. An IPS display can make your monitor standing out.

As the key component behind liquid crystal displays (LCD), these materials change light polarization to create vibrant, high-resolution images on digital screens. The growth of LCD technology has helped propel the larger display panel market enormously, with industry valuation projected to reach $178.20 billion by 2026.

A prolific variety of LCD types has been developed to best meet their exact use-cases and end-environments. Displays may be optimized for power consumption, contrast ratio, color reproduction, optimal viewing angle, temperature range, cost, and more.

Passive Matrix LCDs are addressed with common and segment electrodes. A pixel or an icon is formed at the intersection where a common and a segment electrode overlap. Common electrodes are addressed one-at-a-time in a sequence. Segment electrodes are addressed simultaneously with the information corresponding to all pixels or icons connected to the current common electrode. This method is referred to as multiplexing.

Passive Matrix LCDs offer a cost advantage (both parts and tooling) and are highly customizable. The counterpart to Passive Matrix displays are Active Matrix displays.

Active-Matrix LCDs were developed to overcome some of the limitations of Passive Matrix LCDs – namely resolution, color, and size. Within an Active-Matrix LCD, an “active element” is added to each pixel location (the intersection between a horizontal row and vertical column electrode). These active elements, which can be diodes or transistors, create a threshold and allow control of the optical response of the liquid crystal structure to the applied voltage. Transistors are used as switches to charge a capacitor, which then provides the voltage to the pixel. Whenever a row is turned on, one at a time, all transistor switches in that row are closed and all pixel capacitors are charged with the appropriate voltage. The capacitor then keeps the voltage applied to the pixel after the row is switched off until the next refresh cycle.

Furthermore, the processes used for manufacturing Active-Matrix LCDs can create much finer details on the electrode structure. This allows splitting each pixel in three sub-pixels with different color. This together with the better voltage control allows full color displays.

The transistor switches used in Active Matrix Displays must not protrude significantly above the surface of the display substrates lest they might interfere with a uniform liquid crystal layer thickness. They must be implemented in thin films of suitable materials. Hence, the name Thin Film Transistors (TFT). While AM and TFT have a different meaning, they are often used interchangeably to indicate a higher performance display.

TFTs can be formed by amorphous silicon (denoted α-Si TFT), by poly-crystalline silicon (LTPS for Low Temperature Poly Silicon), or by semiconducting metal oxides (Ox-TFT or IGZO-TFT for Indium Gallium Zinc Oxide).

Currently the most common Electronics Display Technology on the market is LCD technology and among LCD technologies, TFT display technology is the most widely used across consumer applications (laptops, tablets, TVs, Mobile phones, etc.) as well as many industrial, automotive, and medical applications.

As the first commercially successful LCD technology, Passive Matrix Twisted Nematic (TN) LCDs use a 90° twist of the nematic LC fluid between two polarizers to display information. The twist of the LC fluid either blocks light from passing through the LCD cell or allows light to pass, depending on the applied voltage. The applied voltage changes the twisted nematic orientation into an orientation that does not change the polarization of tight. This is called the TN effect.

Initially, Passive TN LCDs were used in segmented, icon, or character displays where an image element was turned “on” and “off” depending on how the fluid was driven. Improvements were made along the way to address the limited viewing angle of TN technology, which can suffer from contrast loss or even inversion at shallow angles.

The numbers of rows or icons that can be addressed in a TN display without Active Matrix addressing is very limited. This is related to how strongly the liquid crystal responds to the applied voltage. Twisting the LC nematic fluid more than 180 degrees (typically between 210 and 270 degrees) causes the display to require a much smaller voltage difference between on and off pixels. This in turn allows addressing of many more rows without an active matrix. Displays with a twist between 210 and 270 degrees are called Super Twisted Nematic displays.

The birefringence of an STN display can be approximated with a stretched transparent plastic film. Adding such a film to an STN display instead of the 2nd STN display is a lot more attractive and has almost the same performance. This is referred to as a Film Compensated STN display (FSTN, or sometimes if two films are used as FFSTN).

The advantage of these technologies is a much wider and more symmetrical viewing angle along with the elimination of the contrast inversion (or color shift) seen in TN TFT LCDs when viewed from various angles. IPS and FFS displays also are less sensitive to pressure, which is a big advantage in touchscreen displays.

Throughout the development of these technologies, there were the initial type, super, advanced, pro, etc. versions, which led to a lot of acronyms like (S-IPS, AS-IPS, H-IPS, FFS-Pro)

Legacy LCDs normally have the driver ICs (integrated circuit) mounted on a printed circuit board (PCBA) which consists of a flat sheet of insulating material used to mount and connect the driver IC and electronic periphery to the LCD. PCBs can be a single-sided, double-sided or multi-layer.

Figures 3a–d show optical and SEM (scanning electron microscopy) images of the fabricated CL and CLSE pixel structures. Each structure has the same pixel size (80 μm × 240 μm) and minimum pattern size (5 μm). As shown in Fig. 3d, the white line patterns are the ITO interdigitated pixel and common electrodes. They are well connected to the source electrode and gate line via through holes, and the common electrodes at both ends cover the underlying data lines to prevent electrical noise from being applied to the LC layer. As will be shown later, this noise shield electrode (SE) is what makes the black matrix above the data line unnecessary

Optical and SEM (scanning electron microscopy) images of fabricated (a, b) CL and (c, d) CLSE pixel structures. The five white line patterns in (d) are the ITO interdigitated pixel and common electrodes. (e) Images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel. (f) The three-black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM) and (g) optical images of pixels without BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines).

Figure 3e shows images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel fabricated in our laboratory, (f) the three black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM), and (g) optical images of panel areas without the BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines). As can be seen in the image from the normal direction, the brightness and contrast of the display area with the top BM and middle BM patterns are almost the same, but the contrast of the display area without the BM is relatively lower because of the lower darkness level of the LC off pixels indicating “HITACHI”. As shown in Fig. 3g, this is due to light leaking through the aperture between the data line and adjacent common lines. Therefore, in the CL structure, the BM on the drain line is necessary to obtain a high contrast ratio by shielding light leakage. This is the same as in the conventional structure. On the contrary, there is no light leakage along the gate line through the gaps between the gate line and edges of the pixel/common electrodes, as is clearly shown in Fig. 3g. This is a unique advantage of the CL structure because the conventional structure must shield these gaps with the BM to prevent light leakage. The suppression of light leakage along the gate line in the CL structure is due to the driving scheme (see Fig. 2b,a for a comparison with the conventional structure). During the holding period (tOFF) in the conventional structure, regardless of the pixel voltage, Vp (including Vp = 0), nonzero Vgp and Vgc are always applied to keep the TFT off, and these voltages are applied to the LC layer, inducing light leakage as reported in

Figure 4a shows the gate voltage (Vg) dependence of the panel brightness, while the inset shows that of the TFT current (transfer characteristics). The gray curves are for the conventional IPS TFT-LCD with the TFT before enhancement, the common line, and the matrix BM (MBM) shown at the top of Fig. 3f. The blue curves are for the proposed CL structure with the enhanced TFT and the stripe BM (SBM) shown in the middle of Fig. 3f. In this case, enhanced TFT characteristics were obtained by using an MNOS TFT without back-channel oxidation that was enhanced by the BTS process. In both structures, the threshold voltages for panel brightness, defined by extrapolating the straight part of the brightness curves, reflect those of the TFT transfer curves defined as Vg at a drain current of 10−12 A, and they are well matched to be 4 V and 9 V, respectively. The maximum brightness for the CL structure is 137% higher than that for the conventional structure, which is due to the increase in the aperture ratio from 38 to 52% that results from the elimination of the common line and the BM covering the gate line.

(a) Dependence of panel brightness and TFT current on gate voltage for the conventional pixel structure of 38% aperture ratio (AR) with matrix black matrix (MBM) over both drain and gate lines and proposed CL pixel structure of 52% AR with strip black matrix (SBM) over only the drain lines. Transfer characteristics before and after bias temperature stress (BTS) treatment are shown in the inset. (b) Charging and (c) holding characteristics of enhanced TFT of the CL structure with gate as a common line. Vg and Vd in the TFT ON state are 30 V and +/−7 V, respectively.

To estimate the charging and holding characteristics of the MNOS-enhanced TFT in the panel, the gate TFT ON and OFF time dependences of the panel brightness were measured (Fig. 4b,c). The charging characteristics in Fig. 4b are plotted as a function of tON at tOFF = 16.6 ms, Vg = 30 V, and Vd = ± 7 V. The holding characteristics in Fig. 4c are plotted as a function of tOFF at tON = 34 μs. 95.1% charging at tON = 34 μs and 95.3% holding at tOFF = 16.6 ms indicate that the enhanced TFT has sufficient charging and holding performance to drive a standard VGA (640 × 480 pixels) panel (the number of scanning lines is estimated as tOFF/tON = 16.6/0.034 = 488).

To confirm the driving conditions for the CL structure without the BM along the gate line (with the SBM), the tOFF dependence of the contrast ratio (CR) in the CL panel was further investigated as shown in Fig. 5a, where CR is plotted as a function of tOFF for the CL panels with the matrix BM (MBM) and the strip BM (SBM). The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. The SBM and MBM panels keep CR higher than 240 with tOFF > 16.6 ms, the frame period of a display panel without flicker being noticeable to the human eye. both panels decrease CR when tOFF is less than 16.6 ms; the CR of the SBM panel decreases faster than the CR of the MBM panel. As shown in the inset, the decrease in CR was due to the increase in dark-state brightness with decreasing tOFF as light leakage increases along the gate line. This light leakage is induced by the voltage Vgp = Vgc = VgON = 30 V applied only for 34 μs during the TFT ON (charging) state, which is 1/488th the duration, tOFF = 16.6 ms, of the TFT OFF (holding) state with Vgp = Vgc = VgOFF = 0 V, but the ratio increases with decreasing tOFF and becomes effective enough to switch on LC layer and induce light leakage. However, it should be stressed again that the CL panel with the normal holding (TFT OFF) time of 16.6 ms does not suffer from the light leakage along the gate line, so the aperture ratio can be increased by removing the BM along the gate line.

(a) Contrast ratio (CR) for CL panels with matrix BM (MBM) and stripe BM (SBM) plotted as a function of tOFF. The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. Vd (= VLC) dependence of (b) brightness and (c) contrast ratio of the CLSE panel. Insets of (b): optical images indicating the elimination of the BM from the CLSE structure (upper left) and the MBM in the conventional structure (lower right). Insets of (c): CLSE panel composed of different areas with three different pixel structures and aperture ratios (ARs), i.e., CLSE structure without BM (60%), CL structure with SBM (52%), and conventional structure with MBM (38%).

Figure 6 indicates the effect of bias temperature stress (BTS) on the TFT characteristics. As the stressing time, tS, of the positive gate stress voltage, Vst =  + 77 V, increases from 0 to 3600 s, the transfer (Id-Vg) curve shifts in the positive direction (Fig. 6a). Vth is defined as Vg at which Id = 10−12 A and ΔVth is defined as the Vth shift from the initial value via BTS. As shown in Fig. 6b, ΔVth increases logarithmically with increasing tS: ΔVth = 2.17 + 4.93 × log (tS). The mechanism behind the gate-stress-induced Vth shift is electron tunnel injection from the a-Si:H semiconductor into the SiOx gate insulator. For confirmation, ΔVth of MNOS TFTs with different SiOx thicknesses is plotted as a function of the electric field applied to the SiOx layer in Fig. 6c. Here, the thickness of the SiOx was varied (5, 10, 20, 50 nm), while the SiN thickness was fixed at 200 nm. The electric field applied to SiOx, Eox, was calculated using the following equation,

Effect of bias temperature stress (BTS) on TFT characteristics. (a) The transfer (Id–Vg) curve shifts in the positive direction with positive gate bias stress of Vst =  + 77 V over the duration of 0–3600 s. (b) ΔVth, defined as the Vth shift from the initial value via BTS, increases logarithmically with increasing tS, following ΔVth = 2.17 + 4.93 × log (tS). (c) ΔVth of MNOS TFTs with different SiOx thicknesses from 5 to 50 nm as a function of the electric field applied to the SiOx layer.

Figure 7a shows the effect of back-channel oxidation (BCO) and passivation (PAS) on the Id-Vg characteristics of the MNOS TFT. The Id-Vg curve with Vth = 5.1 V is further enhanced to Vth = 10.9 V after BCO, although there is a slight degradation of the slope of the current increase in the sub-threshold region. The slope recovers after PAS without any change to the enhanced characteristics

(a) Effect of back-channel oxidation (BCO) and passivation (PAS) on Id–Vg characteristics of MNOS TFT. (b) Vth and Vth standard deviation, σVth, after BTS and after BCO without BTS treatments and (c) SiOX thickness as a function of position along gate-line, x.

The advantage of BCO over BTS is the uniformity of the enhanced characteristics; Fig. 7b shows the distribution of the enhanced Vth as a function of position along gate-line, x, for the MNOS TFTs connected with a 90-mm-long gate line in the TFT substrate after BTS and BCO treatments. The average value of Vth and the standard deviation, σVth, for pristine TFTs before BTS or BCO, are 5.1 V and 0.35 V, respectively. After BCO, Vth is uniformly enhanced, with an average Vth = 11 V and σVth = 0.4 V without increasing σVth. On the other hand, after BTS, Vth is nonuniformly enhanced with an average Vth = 9.3 V and σVth of 1.4 V. In particular, Vth increases linearly as a function of position along gate-line, x. As the gate SiOx thickness linearly decreases, from (54 nm) to (47 nm) with increasing x as shown in Fig. 7c, the increase in ΔVth after BTS with x is due to increase in the electric field applied to SiOx as shown in Fig. 6c and Eq. 1.

It has been shown that the Vth of the MNOS TFT is independent of the gate SiOx thickness when the thickness is more than 5 nm8a, Vth of the MNOS TFT with the BCO treatment becomes almost independent of the BCO SiOx thickness. As shown in the inset, the thickness of BCO SiOx composed of oxidized a-Si:H linearly increases with BCO processing time, and the Vth increase almost saturates at a BCO SiOx thickness greater than 5 nm. Therefore, the enhanced MNOS TFT after BCO has a uniformly high Vth that is robust to thickness fluctuations of the gate and BCO SiOx layers. BCO also has an advantage over BTS in terms of the stability of Vth as shown in Fig. 8b, which plots the annealing time dependence of Vth for BCO and BTS. In this experiment, the stoichiometry (x) of the gate SiOx was 1.78 for BTS and 1.78 and 1.9 for BCO. The annealing temperature in the N2 atmosphere was 200 °C. In the case of BTS, Vth decreased to the pristine value after approximately 5 h of annealing, while Vth decreased more slowly in the case of BCO. In particular, the annealing time required for Vth to fall to 7 V was 7.5 times longer than that of BTS. Increasing the stoichiometry (x) of the gate SiOx dramatically improved the BCO-enhanced Vth to as much as 11 V, which was stably maintained after 24 h of annealing at 200 °C.

(a) Dependence of Vth on thickness of back-channel oxidized (BCO) SiOX. The inset shows the SiOx thickness dependence on the BCO process time for RF powers of 200 W and 500 W. (b) Stability of Vth as a function of annealing time for three different TFTs with gate SiOx stoichiometry, x = 1.78 and bias temperature stress (BTS), x = 1.78 and BCO, and x = 1.9 and BCO. The temperature of annealing in the N2 atmosphere was 200 °C. (c) Band diagram of back-channel oxidized MNOS TFT. The red arrows show the electric dipoles at the SiOX/a-Si:H and a-Si:H/BCO SiOX interfaces.

A schematic band model for the MNOS TFT with the BCO treatment and the sectional structure of the interface between the a-Si:H and gate and BCO SiOx are shown in Fig. 8c. The uniformly high Vth that is independent of SiOx thickness is due to the dipoles generated at the channel and back-channel interfaces between a-Si:H and SiOx8 of reference

T. Arai, H. Iiyori, Y. Hiromasu, M. Atsumi, S. Ioku, and K. Furuta,“Aluminium-Based Gate Structure for Active Matrix Liquid Crystal Displays,” IBM Journal of research and Development, Vol. 42, No. 3/4, pp. 491–499,1998.

N. Fisekovic, T. Nauta, N.J. Cornelissen, and J. Bruinink, “Improved Motion- Picture Quality of AM-LCDs Using Scanning Backlight,” Proceedings of International Display Workshops, pp. 1637–1640, 2001.

K. Fujimori, Y. Narutaki, and N. Kimura, “High-Transmissive Advanced TFT LCD Technology,” Sharp Technical Journal, No. 4, 2003. (sharpworld.com/corporate/info/rd/index.html).

H. Gleskova and S. Wagner, “DC-Bias Stressing of a-Si:H TFTs Fabricated at 150°C on Polyimide Foil,” IEEE Transactions on Electron Devices, Vol. 48, No. 8, p. 1667, 2001.

J. Hirakata, A. Shingai, Y. Tanaka, K. Ono, and T. Furuhashi, “Super-TFT-LCD for Moving Picture Images with the Blink Backlight System,” SID Digest, Vol. 32, No. 1, pp. 990–993, 2001.

M.D. Jacunski, M.S. Shur, and M. Hack, “Threshold Voltage, Field Effect Mobility and Gate-to-Channel Capacitance in Polysilicon TFT’s,” IEEE Transactions on Electron Devices, Vol. 43, No. 9, pp. 1433–1440, 1996.

Y. Kanemori, M. Katayama, N. Nakazawa, H. Kato, K. Yano, and Y. Fukuoka, “10.4 in.-Diagonal Color TFT-LCDs without Residual Images,” SID Digest, pp. 408–411, 1990.

K. Karim, A. Nathan, M. Hack, and W. Milne, “Drain Bias Dependence of Threshold Voltage Stability of Amorphous Silicon TFTs,” IEEE Electron Device Letters, Vol. 25, No. 4, pp. 188–190, 2004.

S.-J. Kim, Y.-C. Sung, and O.-K. Kwon, “Pre-Emphasis Driving Method for Large Size and High Resolution TFT-LCDs,” SID Digest, Vol. 34, No. 1, pp. 1354–1357, 2003.

A.G. Lewis, D.D. Lee, and R.H. Bruce “Polysilicon TFT Circuit Design and Performance,” IEEE Journal of Solid-State Circuits, Vol. 27, No. 12, pp. 1833–1842, 1992.

B.-W. Lee, K. Song, D.-J. Park, Y. Yang, U. Min, S. Hong, C. Park, M. Hong, and K. Chung, “Mastering the Moving Image: Refreshing TFT-LCDs at 120 Hz,” SID Digest, Vol. 36, No. 1, pp. 1583–1585, 2005.

Z. Li, S. Venugopal, R. Shringarpure, D.R. Allee, and L.T. Clark, “An Analytical Lifetime Model for Digital a-Si:H Circuits,” SID Digest, Vol. 37, No.1, pp. 270–273, 2006.

K. Ono, Y. Imajo, I. Mori, R. Oke, S. Kato, K. Endo, H. Ishino, and Y. Ooishi, “New IPS Technology Suitable for LCD-TVs,” SID Digest, Vol. 36, No. 1, pp. 1848–1851, 2005.

K. Suzuki, “Compensative Addressing for Switching Distortion in a-Si TFTLCD,” Proceedings of 7th International Display Research Conference, pp. 107–110, 1987.

K.H. Shin, J.Y. Ahn, K.D. Kim, H.H. Shin, and I.J. Chung, “Acceptable Motion Blur Levels of a LCD TV Based on Human Visual System,” SID Digest, Vol. 37, No. 1, pp. 287–290, 2006.

Y.-C. Sung and O.-K. Kwon, “Low-Cost TFT-LCDs with Pre-Emphasis Driving Method for Large-Size and High-Definition TVs,” IEEE Transactions on Consumer Electronics, Vol. 53, No. 4, pp. 1674–1681, 2007.

Y. Son, J. Kim, H. Cho, J. Hong, J. Na, D. Kim, D. Han, J. Hong, Y. Jeon, and G. Cho, “A Column Driver with Low-Power Area-Efficient Push-Pull Buffer Amplifiers for Active-Matrix LCDs,” Proceedings of IEEE International Solid- State Circuits Conference, pp. 142–143, 2007.

J.H. Souk and J. Lee, “Recent Picture Quality Enhancement Technology Based on Human Visual Perception in LCD TVs,” IEEE Journal of Display Technology, Vol. 3, No. 4, pp. 371–376, 2007.

J.H. Stessen and J.G.R. vanMourik, “Algorithm for Contrast Reserve, Backlight Dimming, and Backlight Boosting on LCD,” SID Digest, Vol. 37, No. 1, pp. 1249–1252, 2006.

E. Takeda, “Simplified Method of Capacitively Coupled Driving for TFTLCD,” Proceedings of 9th International Display Research Conference, pp. 580–583, 1989.

W.-C. Tsai, J.-Y. Lai, K.-Y. Tu, H.-T. Lin, and F.-Y. Gan, “A Novel Barrierless Cu Gate for TFT-LCD,” SID Digest, Vol. 37, No. 1, pp. 1181–1184, 2006.

E. Takeda, Y. Nan-no, Y. Mino, A. Otsuka, S. Ishihara, and S. Nagata, “Capacitively Coupled TFT-LCD Driving Method,” SID Digest, Vol. 31, No. 2, pp. 87–94, 1990.

J.-S. Yoo, “A Novel Polysilicon TFT with Lateral Body Terminal for Driving Circuit Application of AMLCDs,” ITE Technical Report, Vol. 23, No. 67, p. 27, 1999.

Y.-S. Son, H.-H. Son, Y.-S. Kim, H.-S. Oh, and G.-H. Cho, “A Gray-Level Dependent Pre-Emphasis Column Driver with Fast Settling for Active-Matrix LCD Applications,” IEEE Transactions on Circuits and Systems - Part II, pp. 1057–1061, 2007.

The M140NWF5 R3 is a Color Active Matrix Liquid Crystal Display with a back light system. The matrix uses a-Si Thin Film Transistor as a switching device. This TFT LCD has a 14.0 inch diagonally measured active display area with FHD resolution (1,920 horizontal by 1,080 vertical pixels array).