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EarthLCD is a division of Earth Computer Technologies, Inc. originally founded in 1984. A full line of products plus custom engineered solutions are available. We source LCD displays direct from major manufacturers world wide allowing for a cost advantage over our competitors. EarthLCD offer’s the world’s widest variety of LCD’s in fully integrated solutions for OEM supply chain requirements.

Luminance is an important quality characteristic of a TFT-LCD display. Consumers prefer to have a TFT-LCD display with enough luminance. Several control factors in manufacturing a TFT-LCD display may affect the luminance of a TFT-LCD display. Tuning the control factors using a trial and error method incurs significant overhead in time and resources such as the material and the workforce. Therefore, a more efficient method is required for tuning the control factors in manufacturing TFT-LCD displays. To fine-tune the control factors, we need to perform experiments to find the luminance of TFT-LCD displays for different settings of the control factors. An experiment to find the luminance for a specific parameter setting of the control factors requires about 1.5 months for the case company. To reduce the time in fine-tuning the control factors, we should not perform too many experiments in a new method. In this paper, we first used the traditional Taguchi method to find a control factors’ setting to enhance the luminance of TFT-LCD displays. However, because the Taguchi method allows only a few fixed levels for each control factor, it usually cannot find the global optimal setting for the control factors. Therefore, this paper proposes to improve the Taguchi method by incorporating the Taguchi method with the neural network and the genetic algorithm. In the proposed method, we used the data collected from the Taguchi method to train a neural network to predict the luminance of a TFT-LCD display for a given control factors’ setting. Then, we used a genetic algorithm to search for the global optimal control factors’ setting using the predicted luminance of a control factors’ setting as the fitness value of the setting.

The case company is a TFT-LCD display manufacturer in Taiwan. In performing the optical film lamination step in the liquid crystal module assembly process (LCM), the case company observed color streaks, as shown in Figure 1, on some of their TFT-LCD displays. The color streaks reduced the luminance of the TFT-LCD displays. Therefore, to enhance the luminance of TFT-LCD displays, the optical film lamination step needs to be optimized. The optical film lamination step consists of five stages: the raw material inspection, the soft-to-hard lamination, the circuit test, the protection film lamination, and the clean process, as shown in Figure 2. According to a failure analysis performed by the case company, the color streaks on a TFT-LCD display were mainly due to improper setting of control factors in the soft-to-hard lamination stage. Therefore, this paper focuses on optimizing the soft-to-hard lamination stage to improve the luminance of TFT-LCD displays.

For the quality improvement purpose, engineers of the case company selected five positions, as shown in Figure 3, on a TFT-LCD substrate to measure their corresponding values of luminance. The luminance of a TFT-LCD display is the average of the five values of luminance of the selected positions. The case company manufactured about 5000 TFT-LCD displays per day. Therefore, the TFT-LCD displays’ average luminance at a specific date was calculated by averaging the luminance of all the TFT-LCD displays made at that particular date. Figure 4 shows the trend chart for the TFT-LCD displays’ average luminance. The average of the average luminance at all dates in a selected time interval is defined as the baseline, the red line shown in Figure 4. Before fine-tuning the control factors in the sot-to-hard lamination stage, the baseline was 17.03, which was less than the required minimum luminance of 25. Thus, to enhance the TFT-LCD display’s luminance, one needs to find a setting of the control factors such that the baseline is larger than the required minimum luminance of 25. Therefore, we propose in this paper a new method that combines the Taguchi method, a neural network, and a genetic algorithm to fine-tune the setting of control factors in the soft-to-hard lamination stage to enhance the TFT-LCD displays’ luminance.

Many researchers have studied the performance of laminated materials. For example, Lee and Kim [1] investigated the influence of mechanical characteristics on the performance of optical laminating materials in automotive applications by varying the H/vinyl ratio and the hydrogen source ratio. Serhat and Basdogan [2] proposed a multi-objective design methodology to set the parameters’ values in a lamination process to optimize the stiffness of the composite plate with dynamic and load-carrying requirements. Ridhuan et al. [3] studied the effect of interconnecting thickness and yield strength to find maximum peak stress in the longitudinal cross-section of a photovoltaic (PV) laminate during the soldering and lamination processes. For determining the accumulated final residual stresses in a PV laminate, Song et al. [4] simulated the stress evolution of solar cells in manufacturing a conventional silicon wafer-based photovoltaic laminate.

A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is thin relative to the plane of the device.substrate. A common substrate is glass, because the traditional application of TFTs is in liquid-crystal displays (LCDs). This differs from the conventional bulk metal oxide field effect transistor (MOSFET), where the semiconductor material typically is the substrate, such as a silicon wafer.

TFTs can be fabricated with a wide variety of semiconductor materials. Because it is naturally abundant and well understood, amorphous or polycrystalline silicon were (and still are) used as the semiconductor layer. However, because of the low mobility of amorphous siliconcadmium selenide,metal oxides such as indium gallium zinc oxide (IGZO) or zinc oxide,organic semiconductors,carbon nanotubes,metal halide perovskites.

Because TFTs are grown on inert substrates, rather than on wafers, the semiconductor must be deposited in a dedicated process. A variety of techniques are used to deposit semiconductors in TFTs. These include chemical vapor deposition (CVD), atomic layer deposition (ALD), and sputtering. The semiconductor can also be deposited from solution,printing

Some wide band gap semiconductors, most notable metal oxides, are optically transparent.electrodes, such as indium tin oxide (ITO), some TFT devices can be designed to be completely optically transparent.head-up displays (such as on a car windshield).The first solution-processed TTFTs, based on zinc oxide, were reported in 2003 by researchers at Oregon State University.Universidade Nova de Lisboa has produced the world"s first completely transparent TFT at room temperature.

The best known application of thin-film transistors is in TFT LCDs, an implementation of liquid-crystal display technology. Transistors are embedded within the panel itself, reducing crosstalk between pixels and improving image stability.

As of 2008LCD TVs and monitors use this technology. TFT panels are frequently used in digital radiography applications in general radiography. A TFT is used in both direct and indirect capturemedical radiography.

The most beneficial aspect of TFT technology is its use of a separate transistor for each pixel on the display. Because each transistor is small, the amount of charge needed to control it is also small. This allows for very fast re-drawing of the display.

In February 1957, John Wallmark of RCA filed a patent for a thin film MOSFET in which germanium monoxide was used as a gate dielectric. Paul K. Weimer, also of RCA implemented Wallmark"s ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET. It was made with thin films of cadmium selenide and cadmium sulfide. In 1966, T.P. Brody and H.E. Kunig at Westinghouse Electric fabricated indium arsenide (InAs) MOS TFTs in both depletion and enhancement modes.

The idea of a TFT-based liquid-crystal display (LCD) was conceived by Bernard J. Lechner of RCA Laboratories in 1968.dynamic scattering LCD that used standard discrete MOSFETs, as TFT performance was not adequate at the time.T. Peter Brody, J. A. Asars and G. D. Dixon at Westinghouse Research Laboratories developed a CdSe (cadmium selenide) TFT, which they used to demonstrate the first CdSe thin-film-transistor liquid-crystal display (TFT LCD).electroluminescence (EL) in 1973, using CdSe.active-matrix liquid-crystal display (AM LCD) using CdSe in 1974, and then Brody coined the term "active matrix" in 1975.

A breakthrough in TFT research came with the development of the amorphous silicon (a-Si) TFT by P.G. le Comber, W.E. Spear and A. Ghaith at the University of Dundee in 1979. They reported the first functional TFT made from hydrogenated a-Si with a silicon nitride gate dielectric layer.research and development (R&D) of AM LCD panels based on a-Si TFTs in Japan.

By 1982, Pocket TVs based on AM LCD technology were developed in Japan.Fujitsu"s S. Kawai fabricated an a-Si dot-matrix display, and Canon"s Y. Okubo fabricated a-Si twisted nematic (TN) and guest-host LCD panels. In 1983, Toshiba"s K. Suzuki produced a-Si TFT arrays compatible with CMOS integrated circuits (ICs), Canon"s M. Sugata fabricated an a-Si color LCD panel, and a joint Sanyo and Sanritsu team including Mitsuhiro Yamasaki, S. Suhibuchi and Y. Sasaki fabricated a 3-inch a-SI color LCD TV.

The first commercial TFT-based AM LCD product was the 2.1-inch EpsonHitachi research team led by Akio Mimura demonstrated a low-temperature polycrystalline silicon (LTPS) process for fabricating n-channel TFTs on a silicon-on-insulator (SOI), at a relatively low temperature of 200°C.Hosiden research team led by T. Sunata in 1986 used a-Si TFTs to develop a 7-inch color AM LCD panel,Apple Computers.Sharp research team led by engineer T. Nagayasu used hydrogenated a-Si TFTs to demonstrate a 14-inch full-color LCD display,electronics industry that LCD would eventually replace cathode-ray tube (CRT) as the standard television display technology.notebook PCs.IBM Japan introduced a 12.1-inch color SVGA panel for the first commercial color laptop by IBM.

TFTs can also be made out of indium gallium zinc oxide (IGZO). TFT-LCDs with IGZO transistors first showed up in 2012, and were first manufactured by Sharp Corporation. IGZO allows for higher refresh rates and lower power consumption.polyimide substrate.

Kawamoto, H. (2012). "The Inventors of TFT Active-Matrix LCD Receive the 2011 IEEE Nishizawa Medal". Journal of Display Technology. 8 (1): 3–4. Bibcode:2012JDisT...8....3K. doi:10.1109/JDT.2011.2177740. ISSN 1551-319X.

Brody, T. Peter; Asars, J. A.; Dixon, G. D. (November 1973). "A 6 × 6 inch 20 lines-per-inch liquid-crystal display panel". 20 (11): 995–1001. Bibcode:1973ITED...20..995B. doi:10.1109/T-ED.1973.17780. ISSN 0018-9383.

Kimura, Mutsumi; Inoue, Satoshi; Shimoda, Tatsuya; Lui, Basil; French, William; Kamohara, Itaru; Migliorato, Piero (2001). "Development of poly-Si TFT models for device simulation: In-plane trap model and thermionic emission model". SID Conference Record of the International Display Research Conference (in Japanese): 423–426. ISSN 1083-1312.

Mimura, Akio; Oohayashi, M.; Ohue, M.; Ohwada, J.; Hosokawa, Y. (1986). "SOI TFT"s with directly contacted ITO". IEEE Electron Device Letters. 7 (2): 134–6. Bibcode:1986IEDL....7..134M. doi:10.1109/EDL.1986.26319. ISSN 0741-3106. S2CID 36089445.

Sunata, T.; Yukawa, T.; Miyake, K.; Matsushita, Y.; Murakami, Y.; Ugai, Y.; Tamamura, J.; Aoki, S. (1986). "A large-area high-resolution active-matrix color LCD addressed by a-Si TFT"s". 33 (8): 1212–1217. Bibcode:1986ITED...33.1212S. doi:10.1109/T-ED.1986.22644. ISSN 0018-9383. S2CID 44190988.

Sunata, T.; Miyake, K.; Yasui, M.; Murakami, Y.; Ugai, Y.; Tamamura, J.; Aoki, S. (1986). "A 640 × 400 pixel active-matrix LCD using a-Si TFT"s". IEEE Transactions on Electron Devices. 33 (8): 1218–21. Bibcode:1986ITED...33.1218S. doi:10.1109/T-ED.1986.22645. ISSN 0018-9383. S2CID 6356531.

Nagayasu, T.; Oketani, T.; Hirobe, T.; Kato, H.; Mizushima, S.; Take, H.; Yano, K.; Hijikigawa, M.; Washizuka, I. (October 1988). "A 14-in.-diagonal full-color a-Si TFT LCD". Conference Record of the 1988 International Display Research Conference: 56–58. doi:10.1109/DISPL.1988.11274. S2CID 20817375.

FPD (Flat Panel Display), LCD (Liquid Crystal Display), and TFT (Thin Film Transistor Display) - Flat panel displays are electronic viewing technologies used to enable people to see content in a range of entertainment, consumer electronics, personal computer, and mobile devices, and many types of medical, transportation and industrial equipment. A liquid-crystal display (LCD) is a flat-panel display or other electronic visual display that uses the light-modulating properties of liquid crystals. Liquid crystals do not emit light directly. LCDs are used in a wide range of applications including computer monitors, televisions, instrument panels, aircraft cockpit displays, and indoor and outdoor signage. Small LCD screens are common in portable consumer devices such as digital cameras, watches, calculators, and mobile telephones, including smartphones. A thin-film-transistor liquid-crystal display (TFT LCD) is a variant of a liquid-crystal display (LCD) that uses thin-film transistor (TFT) technology to improve image qualities such as addressability and contrast. TFT LCDs are used in appliances including television sets, computer monitors, mobile phones, handheld video game systems, personal digital assistants, navigation systems and projectors. TFT LCDs are also used in car instrument clusters because they allow the driver to customize the cluster, as well as being able to provide an analogue-like display with digital elements. The production of these panels utilize a variety of materials for testing, and handling including LCD Lift Pins made from Celazole® PBI, and Vespel® PI.