a si tft lcd ips quotation

IPS (In-Plane Switching) lcd is still a type of TFT LCD, IPS TFT is also called SFT LCD (supper fine tft ),different to regular tft in TN (Twisted Nematic) mode, theIPS LCD liquid crystal elements inside the tft lcd cell, they are arrayed in plane inside the lcd cell when power off, so the light can not transmit it via theIPS lcdwhen power off, When power on, the liquid crystal elements inside the IPS tft would switch in a small angle, then the light would go through the IPS lcd display, then the display on since light go through the IPS display, the switching angle is related to the input power, the switch angle is related to the input power value of IPS LCD, the more switch angle, the more light would transmit the IPS LCD, we call it negative display mode.

The regular tft lcd, it is a-si TN (Twisted Nematic) tft lcd, its liquid crystal elements are arrayed in vertical type, the light could transmit the regularTFT LCDwhen power off. When power on, the liquid crystal twist in some angle, then it block the light transmit the tft lcd, then make the display elements display on by this way, the liquid crystal twist angle is also related to the input power, the more twist angle, the more light would be blocked by the tft lcd, it is tft lcd working mode.

A TFT lcd display is vivid and colorful than a common monochrome lcd display. TFT refreshes more quickly response than a monochrome LCD display and shows motion more smoothly. TFT displays use more electricity in driving than monochrome LCD screens, so they not only cost more in the first place, but they are also more expensive to drive tft lcd screen.The two most common types of TFT LCDs are IPS and TN displays.

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VIS154KPG04 is a 1.54 inch TFT LCD display panel module model that adopts IPS type square LCD with 240*240 resolution. CTP (Capacity Touch Panel) can be added according to user requirements. Based on the square characteristics and wide Angle of view of this 1.54-inch LCD module, it is especially suitable for smart wear (watch) devices and various instrument display. We can guarantee 3~5 years supply of this LCD screen module throughout the life cycle of your product.

IPS (in-plane switching) is a screen technology for liquid-crystal displays (LCDs). In IPS, a layer of liquid crystals is sandwiched between two glass surfaces. The liquid crystal molecules are aligned parallel to those surfaces in predetermined directions (in-plane). The molecules are reoriented by an applied electric field, whilst remaining essentially parallel to the surfaces to produce an image. It was designed to solve the strong viewing angle dependence and low-quality color reproduction of the twisted nematic field effect (TN) matrix LCDs prevalent in the late 1980s.

The TN method was the only viable technology for active matrix TFT LCDs in the late 1980s and early 1990s. Early panels showed grayscale inversion from up to down,Vertical Alignment (VA)—that could resolve these weaknesses and were applied to large computer monitor panels.

One approach patented in 1974 was to use inter-digitated electrodes on one glass substrate only to produce an electric field essentially parallel to the glass substrates.

After thorough analysis, details of advantageous molecular arrangements were filed in Germany by Guenter Baur et al. and patented in various countries including the US on 9 January 1990.Fraunhofer Society in Freiburg, where the inventors worked, assigned these patents to Merck KGaA, Darmstadt, Germany.

Shortly thereafter, Hitachi of Japan filed patents to improve this technology. A leader in this field was Katsumi Kondo, who worked at the Hitachi Research Center.thin-film transistor array as a matrix and to avoid undesirable stray fields in between pixels.Super IPS). NEC and Hitachi became early manufacturers of active-matrix addressed LCDs based on the IPS technology. This is a milestone for implementing large-screen LCDs having acceptable visual performance for flat-panel computer monitors and television screens. In 1996, Samsung developed the optical patterning technique that enables multi-domain LCD. Multi-domain and in-plane switching subsequently remain the dominant LCD designs through 2006.

IPS technology is widely used in panels for TVs, tablet computers, and smartphones. In particular, most IBM products was marketed as CCFL backlighting, and all Apple Inc. products marketed with the label backlighting since 2010.

Most panels also support true 8-bit-per-channel colour. These improvements came at the cost of a lower response time, initially about 50 ms. IPS panels were also extremely expensive.

IPS has since been superseded by S-IPS (Super-IPS, Hitachi Ltd. in 1998), which has all the benefits of IPS technology with the addition of improved pixel refresh timing.

In this case, both linear polarizing filters P and A have their axes of transmission in the same direction. To obtain the 90 degree twisted nematic structure of the LC layer between the two glass plates without an applied electric field (OFF state), the inner surfaces of the glass plates are treated to align the bordering LC molecules at a right angle. This molecular structure is practically the same as in TN LCDs. However, the arrangement of the electrodes e1 and e2 is different. Because they are in the same plane and on a single glass plate, they generate an electric field essentially parallel to this plate. The diagram is not to scale: the LC layer is only a few micrometers thick and so is very small compared with the distance between the electrodes.

The LC molecules have a positive dielectric anisotropy and align themselves with their long axis parallel to an applied electrical field. In the OFF state (shown on the left), entering light L1 becomes linearly polarized by polarizer P. The twisted nematic LC layer rotates the polarization axis of the passing light by 90 degrees, so that ideally no light passes through polarizer A. In the ON state, a sufficient voltage is applied between electrodes and a corresponding electrical field E is generated that realigns the LC molecules as shown on the right of the diagram. Here, light L2 can pass through polarizer A.

In practice, other schemes of implementation exist with a different structure of the LC molecules – for example without any twist in the OFF state. As both electrodes are on the same substrate, they take more space than TN matrix electrodes. This also reduces contrast and brightness.

Unlike TN LCDs, IPS panels do not lighten or show tailing when touched. This is important for touch-screen devices, such as smartphones and tablet computers.

Toward the end of 2010 Samsung Electronics introduced Super PLS (Plane-to-Line Switching) with the intent of providing an alternative to the popular IPS technology which is primarily manufactured by LG Display. It is an "IPS-type" panel technology, and is very similar in performance features, specs and characteristics to LG Display"s offering. Samsung adopted PLS panels instead of AMOLED panels, because in the past AMOLED panels had difficulties in realizing full HD resolution on mobile devices. PLS technology was Samsung"s wide-viewing angle LCD technology, similar to LG Display"s IPS technology.

In 2012 AU Optronics began investment in their own IPS-type technology, dubbed AHVA. This should not be confused with their long standing AMVA technology (which is a VA-type technology). Performance and specs remained very similar to LG Display"s IPS and Samsung"s PLS offerings. The first 144 Hz compatible IPS-type panels were produced in late 2014 (used first in early 2015) by AUO, beating Samsung and LG Display to providing high refresh rate IPS-type panels.

Cross, Jason (18 March 2012). "Digital Displays Explained". TechHive. PC World. p. 4. Archived from the original on 2 April 2015. Retrieved 19 March 2015.

"TFT Technology: Enhancing the viewing angle". Riverdi (TFT Module Manufacturer). Archived from the original on 23 April 2016. Retrieved 5 November 2016. However, [twisted nematic] suffers from the phenomenon called gray scale inversion. This means that the display has one viewing side in which the image colors suddenly change after exceeding the specified viewing angle. (see image Inversion Effect) External link in |quote= (help)

tech2 News Staff (19 May 2011). "LG Announces Super High Resolution AH-IPS Displays". Firstpost.com. Archived from the original on 11 December 2015. Retrieved 10 December 2015.

Baker, Simon (30 April 2011). "Panel Technologies: TN Film, MVA, PVA and IPS Explained". Tftcentral.co.uk. Archived from the original on 29 June 2017. Retrieved 13 January 2012.

Ivankov, Alex (1 September 2016). "Advantages and disadvantages of IPS screen technology". Version Daily. Archived from the original on 26 September 2017. Retrieved 25 September 2017.

"Samsung PLS improves on IPS displays like iPad"s, costs less". electronista.com. Archived from the original on 27 October 2012. Retrieved 30 October 2012.

VIS024TN01 is a 2.4″ TFT LCD display module model that adopts TN type LCD with 240*320 resolution. CTP (Capacity Touch Panel) or RTP(Resistive Touch Panel) can be added according to user requirements.

The 2.4-inch TFT-LCD is probably the most sold LCD panel size in the world in terms of unit shipments. It has a wide range of applications and life cycle.

Based on the substantial and long-term shipments of 2.4 inch TFT LCD panels, we can guarantee a stable supply of this LCD display module throughout the life cycle of your product.

Based on the 2.4 inch LCD’s high stability, low price, and excellent storage and operating temperature range, this type of LCD display module can be widely used in feature phones, smart homes, pos machines, industrial instruments (meters), and small medical equipment and other products.

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Thin-Film Transistor Liquid Crystal Displays use thin-film transistors to control the voltage applied to the liquid crystal layer at a sub-pixel level. The structure of TFT LCDs consists of a TFT “sandwich” and a BLU (Backlight Unit). A typical configuration is shown in the schematic diagram below.

Firstly, between the back and front polarizers, TFT LCD cells are made with two glass substrates – one for color filters, the other for a TFT array – and a liquid crystal layer sandwiched in between.

Secondly, BLU (Backlight Unit) usually consists of three components: BEF (Brightness Enhancement Film), DBEF (Dual Brightness Enhancement Film), and LGP (Light Guide Plate).

For normally black TFT LCDs, if we follow along a piece of light setting off from its backlight source, it will bea)guided uniformly by LGP;b)reflected and enhanced by BEF and DBEF;c)polarized by the back polarizer;d)polarization changed by twisted LC under the voltage applied by TFT arrays;e)“tinted” red/green/blue by corresponding color filter of the subpixel;f)let through the front polarizer by matched polarization; andg)finally, it will reach the surface and appears in viewer’s eyes.

For normally white panels, processd)will be the opposite – known as the polarization rotation effect, light is twisted in a voltage-off stage and can pass through the front polarizer by default, thus displaying white normally. However, when the voltage applied increases, this polarization rotation effect would be gradually diminished. And the light would not be able to pass through the front polarizer anymore without changing its polarization. In this way, certain pixels will appear in different colors.

Normally black LCDs have higher contrast and wider viewing angles without grayscale inversion phenomenon compared to their normally white relatives. And whether TFT LCDs are normally black or white depends on their LC switching mode:

2Chen, HW., Lee, JH., Lin, BY.et al.Liquid crystal display and organic light-emitting diode display: present status and future perspectives.Light Sci Appl7,17168 (2018).https://doi.org/10.1038/lsa.2017.168

Schematic diagram of the (a) TN mode, (b) VA mode, (c) FFS mode, and (d) IPS mode. *LC orientations shown are under applied voltages. C/F stands for the color filter.

As previously mentioned, TN mode functions with the polarization rotation effect. Under traditional TN/VA display mode, the liquid crystal molecules are vertically arranged, with a relatively narrow visual angle. When an external force is exerted on the screen, the liquid crystal molecular structure will sink in a herringbone pattern to slowly recover – a pattern called vertical alignment. Therefore, an evident “water ripple” usually appears when the display surface is touched and impacts the user experience. In comparison, the VA mode provides higher contrast. And MVA (multi-domain vertical alignment) is an upgraded version of VA with improved viewing angles.

Under IPS mode, the LC directors are horizontally (homogeneously) aligned, which makes them free from ripple effects when made into touch panels. The drawback is lower transmittance, especially for LCs in a “dead zone”close to electrodes.

In an FFS cell, LC molecules rotate in both vertical and horizontal dimensions, enabling excellent viewing angles, high transmittance, low driving voltage/power consumptions, and high contrast ratio.

3 Yang DK, Wu ST.Fundamentals of Liquid Crystal Devices. 2nd edition. New York, USA: John Wiley & Sons. 2014.4 BOE ADSDS Ultra Hard screen Technology, Restoring Real and Beautiful Life. 2020 BOE Technology Group Co., Ltd.  Retrieved December 01, 2020, fromhttps://www.boe.com/en/cxkj/boecx/boecxxqy/dynamic/pecbbd751.html

If you want to buy a new monitor, you might wonder what kind of display technologies I should choose. In today’s market, there are two main types of computer monitors: TFT LCD monitors & IPS monitors.

The word TFT means Thin Film Transistor. It is the technology that is used in LCD displays.  We have additional resources if you would like to learn more about what is a TFT Display. This type of LCDs is also categorically referred to as an active-matrix LCD.

These LCDs can hold back some pixels while using other pixels so the LCD screen will be using a very minimum amount of energy to function (to modify the liquid crystal molecules between two electrodes). TFT LCDs have capacitors and transistors. These two elements play a key part in ensuring that the TFT display monitor functions by using a very small amount of energy while still generating vibrant, consistent images.

Industry nomenclature: TFT LCD panels or TFT screens can also be referred to as TN (Twisted Nematic) Type TFT displays or TN panels, or TN screen technology.

IPS (in-plane-switching) technology is like an improvement on the traditional TFT LCD display module in the sense that it has the same basic structure, but has more enhanced features and more widespread usability.

These LCD screens offer vibrant color, high contrast, and clear images at wide viewing angles. At a premium price. This technology is often used in high definition screens such as in gaming or entertainment.

Both TFT display and IPS display are active-matrix displays, neither can’t emit light on their own like OLED displays and have to be used with a back-light of white bright light to generate the picture. Newer panels utilize LED backlight (light-emitting diodes) to generate their light hence utilizing less power and requiring less depth by design. Neither TFT display nor IPS display can produce color, there is a layer of RGB (red, green, blue) color filter in each LCD pixels to produce the color consumers see. If you use a magnifier to inspect your monitor, you will see RGB color in each pixel. With an on/off switch and different level of brightness RGB, we can get many colors.

Wider viewing angles are not always welcome or needed. Image you work on the airplane. The person sitting next to you always looking at your screen, it can be very uncomfortable. There are more expensive technologies to narrow the viewing angle on purpose to protect the privacy.

Winner. IPS TFT screens have around 0.3 milliseconds response time while TN TFT screens responds around 10 milliseconds which makes the latter unsuitable for gaming

Winner. the images that IPS displays create are much more pristine and original than that of the TFT screen. IPS displays do this by making the pixels function in a parallel way. Because of such placing, the pixels can reflect light in a better way, and because of that, you get a better image within the display.

As the display screen made with IPS technology is mostly wide-set, it ensures that the aspect ratio of the screen would be wider. This ensures better visibility and a more realistic viewing experience with a stable effect.

Winner. While the TFT LCD has around 15% more power consumption vs IPS LCD, IPS has a lower transmittance which forces IPS displays to consume more power via backlights. TFT LCD helps battery life.

Normally, high-end products, such as Apple Mac computer monitors and Samsung mobile phones, generally use IPS panels. Some high-end TV and mobile phones even use AMOLED (Active Matrix Organic Light Emitting Diodes) displays. This cutting edge technology provides even better color reproduction, clear image quality, better color gamut, less power consumption when compared to LCD technology.

What you need to choose is AMOLED for your TV and mobile phones instead of PMOLED. If you have budget leftover, you can also add touch screen functionality as most of the touch nowadays uses PCAP (Projective Capacitive) touch panel.

This kind of touch technology was first introduced by Steve Jobs in the first-generation iPhone. Of course, a TFT LCD display can always meet the basic needs at the most efficient price. An IPS display can make your monitor standing out.

Display model TT800RGN02A is a color-active matrix thin-film transistor(TFT)liquid crystal display(LCD)that uses amorphous silicon TFT as a switching device. This TFT LCD has a 8 inch diagonally measured active display area with (800 horizontal by 1280 vertical pixels)resolution.

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Ensuring that the color and brightness of each picture match in a tile matrix can be time consuming and requires additional calibration hardware; Each RisingStar Outdoor"s highlight screen is individually color calibrated to the D65 (6500K) CIE color standard; This not only produces a true, natural white, but the color of all screens will be uniform.

LCD screens are widely used in industrial control displays, car custom screens, tankers, etc. All of these devices are special depend on the high bright.

Figures 3a–d show optical and SEM (scanning electron microscopy) images of the fabricated CL and CLSE pixel structures. Each structure has the same pixel size (80 μm × 240 μm) and minimum pattern size (5 μm). As shown in Fig. 3d, the white line patterns are the ITO interdigitated pixel and common electrodes. They are well connected to the source electrode and gate line via through holes, and the common electrodes at both ends cover the underlying data lines to prevent electrical noise from being applied to the LC layer. As will be shown later, this noise shield electrode (SE) is what makes the black matrix above the data line unnecessary

Optical and SEM (scanning electron microscopy) images of fabricated (a, b) CL and (c, d) CLSE pixel structures. The five white line patterns in (d) are the ITO interdigitated pixel and common electrodes. (e) Images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel. (f) The three-black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM) and (g) optical images of pixels without BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines).

Figure 3e shows images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel fabricated in our laboratory, (f) the three black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM), and (g) optical images of panel areas without the BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines). As can be seen in the image from the normal direction, the brightness and contrast of the display area with the top BM and middle BM patterns are almost the same, but the contrast of the display area without the BM is relatively lower because of the lower darkness level of the LC off pixels indicating “HITACHI”. As shown in Fig. 3g, this is due to light leaking through the aperture between the data line and adjacent common lines. Therefore, in the CL structure, the BM on the drain line is necessary to obtain a high contrast ratio by shielding light leakage. This is the same as in the conventional structure. On the contrary, there is no light leakage along the gate line through the gaps between the gate line and edges of the pixel/common electrodes, as is clearly shown in Fig. 3g. This is a unique advantage of the CL structure because the conventional structure must shield these gaps with the BM to prevent light leakage. The suppression of light leakage along the gate line in the CL structure is due to the driving scheme (see Fig. 2b,a for a comparison with the conventional structure). During the holding period (tOFF) in the conventional structure, regardless of the pixel voltage, Vp (including Vp = 0), nonzero Vgp and Vgc are always applied to keep the TFT off, and these voltages are applied to the LC layer, inducing light leakage as reported in

Figure 4a shows the gate voltage (Vg) dependence of the panel brightness, while the inset shows that of the TFT current (transfer characteristics). The gray curves are for the conventional IPS TFT-LCD with the TFT before enhancement, the common line, and the matrix BM (MBM) shown at the top of Fig. 3f. The blue curves are for the proposed CL structure with the enhanced TFT and the stripe BM (SBM) shown in the middle of Fig. 3f. In this case, enhanced TFT characteristics were obtained by using an MNOS TFT without back-channel oxidation that was enhanced by the BTS process. In both structures, the threshold voltages for panel brightness, defined by extrapolating the straight part of the brightness curves, reflect those of the TFT transfer curves defined as Vg at a drain current of 10−12 A, and they are well matched to be 4 V and 9 V, respectively. The maximum brightness for the CL structure is 137% higher than that for the conventional structure, which is due to the increase in the aperture ratio from 38 to 52% that results from the elimination of the common line and the BM covering the gate line.

(a) Dependence of panel brightness and TFT current on gate voltage for the conventional pixel structure of 38% aperture ratio (AR) with matrix black matrix (MBM) over both drain and gate lines and proposed CL pixel structure of 52% AR with strip black matrix (SBM) over only the drain lines. Transfer characteristics before and after bias temperature stress (BTS) treatment are shown in the inset. (b) Charging and (c) holding characteristics of enhanced TFT of the CL structure with gate as a common line. Vg and Vd in the TFT ON state are 30 V and +/−7 V, respectively.

To estimate the charging and holding characteristics of the MNOS-enhanced TFT in the panel, the gate TFT ON and OFF time dependences of the panel brightness were measured (Fig. 4b,c). The charging characteristics in Fig. 4b are plotted as a function of tON at tOFF = 16.6 ms, Vg = 30 V, and Vd = ± 7 V. The holding characteristics in Fig. 4c are plotted as a function of tOFF at tON = 34 μs. 95.1% charging at tON = 34 μs and 95.3% holding at tOFF = 16.6 ms indicate that the enhanced TFT has sufficient charging and holding performance to drive a standard VGA (640 × 480 pixels) panel (the number of scanning lines is estimated as tOFF/tON = 16.6/0.034 = 488).

To confirm the driving conditions for the CL structure without the BM along the gate line (with the SBM), the tOFF dependence of the contrast ratio (CR) in the CL panel was further investigated as shown in Fig. 5a, where CR is plotted as a function of tOFF for the CL panels with the matrix BM (MBM) and the strip BM (SBM). The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. The SBM and MBM panels keep CR higher than 240 with tOFF > 16.6 ms, the frame period of a display panel without flicker being noticeable to the human eye. both panels decrease CR when tOFF is less than 16.6 ms; the CR of the SBM panel decreases faster than the CR of the MBM panel. As shown in the inset, the decrease in CR was due to the increase in dark-state brightness with decreasing tOFF as light leakage increases along the gate line. This light leakage is induced by the voltage Vgp = Vgc = VgON = 30 V applied only for 34 μs during the TFT ON (charging) state, which is 1/488th the duration, tOFF = 16.6 ms, of the TFT OFF (holding) state with Vgp = Vgc = VgOFF = 0 V, but the ratio increases with decreasing tOFF and becomes effective enough to switch on LC layer and induce light leakage. However, it should be stressed again that the CL panel with the normal holding (TFT OFF) time of 16.6 ms does not suffer from the light leakage along the gate line, so the aperture ratio can be increased by removing the BM along the gate line.

(a) Contrast ratio (CR) for CL panels with matrix BM (MBM) and stripe BM (SBM) plotted as a function of tOFF. The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. Vd (= VLC) dependence of (b) brightness and (c) contrast ratio of the CLSE panel. Insets of (b): optical images indicating the elimination of the BM from the CLSE structure (upper left) and the MBM in the conventional structure (lower right). Insets of (c): CLSE panel composed of different areas with three different pixel structures and aperture ratios (ARs), i.e., CLSE structure without BM (60%), CL structure with SBM (52%), and conventional structure with MBM (38%).

Figure 5b,c shows the Vd (= VLC) dependence of the brightness and contrast ratio of the CLSE panel without a BM along the drain line and along the gate line. As shown in the optical images in the insets of Fig. 5c, the CLSE panel has different areas with three different pixel structures and aperture ratios (ARs), i.e., the CLSE structure without the BM (60%), the CL structure with the SBM (52%), and the conventional structure with the MBM (38%). The optical images in the inset of Fig. 5b clearly indicate the elimination of the BM from the CLSE structure and the MBM in the conventional structure. The ratios of the bright area in the CLSE and conventional pixels shown in the red dotted square appear higher than the aperture ratios because the pixel and common electrodes are invisible due to the brightness. The brightness and contrast ratio in each area increase with increasing Vd; the ratios for the CLSE structure without the BM are approximately 160% those of the conventional structure with the MBM, reflecting the difference in aperture ratio.

Figure 6 indicates the effect of bias temperature stress (BTS) on the TFT characteristics. As the stressing time, tS, of the positive gate stress voltage, Vst =  + 77 V, increases from 0 to 3600 s, the transfer (Id-Vg) curve shifts in the positive direction (Fig. 6a). Vth is defined as Vg at which Id = 10−12 A and ΔVth is defined as the Vth shift from the initial value via BTS. As shown in Fig. 6b, ΔVth increases logarithmically with increasing tS: ΔVth = 2.17 + 4.93 × log (tS). The mechanism behind the gate-stress-induced Vth shift is electron tunnel injection from the a-Si:H semiconductor into the SiOx gate insulator. For confirmation, ΔVth of MNOS TFTs with different SiOx thicknesses is plotted as a function of the electric field applied to the SiOx layer in Fig. 6c. Here, the thickness of the SiOx was varied (5, 10, 20, 50 nm), while the SiN thickness was fixed at 200 nm. The electric field applied to SiOx, Eox, was calculated using the following equation,

Effect of bias temperature stress (BTS) on TFT characteristics. (a) The transfer (Id–Vg) curve shifts in the positive direction with positive gate bias stress of Vst =  + 77 V over the duration of 0–3600 s. (b) ΔVth, defined as the Vth shift from the initial value via BTS, increases logarithmically with increasing tS, following ΔVth = 2.17 + 4.93 × log (tS). (c) ΔVth of MNOS TFTs with different SiOx thicknesses from 5 to 50 nm as a function of the electric field applied to the SiOx layer.

where εo = 3.5 and do are the electrical permittivity and thicknesses of SiOx and εn = 7 and dn = 200 nm are those of SiN. ΔVth linearly increases at a threshold electric field at 4.6 MV/cm on the same straight line regardless of the thickness of SiOx. From these results, we concluded that the Vst-induced Vth shift mechanism is Fowler–Nordheim type tunneling injection

Figure 7a shows the effect of back-channel oxidation (BCO) and passivation (PAS) on the Id-Vg characteristics of the MNOS TFT. The Id-Vg curve with Vth = 5.1 V is further enhanced to Vth = 10.9 V after BCO, although there is a slight degradation of the slope of the current increase in the sub-threshold region. The slope recovers after PAS without any change to the enhanced characteristics

(a) Effect of back-channel oxidation (BCO) and passivation (PAS) on Id–Vg characteristics of MNOS TFT. (b) Vth and Vth standard deviation, σVth, after BTS and after BCO without BTS treatments and (c) SiOX thickness as a function of position along gate-line, x.

The advantage of BCO over BTS is the uniformity of the enhanced characteristics; Fig. 7b shows the distribution of the enhanced Vth as a function of position along gate-line, x, for the MNOS TFTs connected with a 90-mm-long gate line in the TFT substrate after BTS and BCO treatments. The average value of Vth and the standard deviation, σVth, for pristine TFTs before BTS or BCO, are 5.1 V and 0.35 V, respectively. After BCO, Vth is uniformly enhanced, with an average Vth = 11 V and σVth = 0.4 V without increasing σVth. On the other hand, after BTS, Vth is nonuniformly enhanced with an average Vth = 9.3 V and σVth of 1.4 V. In particular, Vth increases linearly as a function of position along gate-line, x. As the gate SiOx thickness linearly decreases, from (54 nm) to (47 nm) with increasing x as shown in Fig. 7c, the increase in ΔVth after BTS with x is due to increase in the electric field applied to SiOx as shown in Fig. 6c and Eq. 1.

It has been shown that the Vth of the MNOS TFT is independent of the gate SiOx thickness when the thickness is more than 5 nm8a, Vth of the MNOS TFT with the BCO treatment becomes almost independent of the BCO SiOx thickness. As shown in the inset, the thickness of BCO SiOx composed of oxidized a-Si:H linearly increases with BCO processing time, and the Vth increase almost saturates at a BCO SiOx thickness greater than 5 nm. Therefore, the enhanced MNOS TFT after BCO has a uniformly high Vth that is robust to thickness fluctuations of the gate and BCO SiOx layers. BCO also has an advantage over BTS in terms of the stability of Vth as shown in Fig. 8b, which plots the annealing time dependence of Vth for BCO and BTS. In this experiment, the stoichiometry (x) of the gate SiOx was 1.78 for BTS and 1.78 and 1.9 for BCO. The annealing temperature in the N2 atmosphere was 200 °C. In the case of BTS, Vth decreased to the pristine value after approximately 5 h of annealing, while Vth decreased more slowly in the case of BCO. In particular, the annealing time required for Vth to fall to 7 V was 7.5 times longer than that of BTS. Increasing the stoichiometry (x) of the gate SiOx dramatically improved the BCO-enhanced Vth to as much as 11 V, which was stably maintained after 24 h of annealing at 200 °C.

(a) Dependence of Vth on thickness of back-channel oxidized (BCO) SiOX. The inset shows the SiOx thickness dependence on the BCO process time for RF powers of 200 W and 500 W. (b) Stability of Vth as a function of annealing time for three different TFTs with gate SiOx stoichiometry, x = 1.78 and bias temperature stress (BTS), x = 1.78 and BCO, and x = 1.9 and BCO. The temperature of annealing in the N2 atmosphere was 200 °C. (c) Band diagram of back-channel oxidized MNOS TFT. The red arrows show the electric dipoles at the SiOX/a-Si:H and a-Si:H/BCO SiOX interfaces.

A schematic band model for the MNOS TFT with the BCO treatment and the sectional structure of the interface between the a-Si:H and gate and BCO SiOx are shown in Fig. 8c. The uniformly high Vth that is independent of SiOx thickness is due to the dipoles generated at the channel and back-channel interfaces between a-Si:H and SiOx8 of reference

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