silicon display screens free sample

adhesive spacers provide thin liquid-crystal cell gap control <2.5µm with excellent uniformity (±100nm) for glass-on-glass and glass-on-silicon assemblies. The resin is

Zion Market Research published the latest report titled as"Liquid Crystal on Silicon (LCoS) Market By End-User (Military, Medical, Optical 3D Measurement, Aviation, Automotive, and Consumer Electronics), By Technology (Wavelength Selective Switching, Nematics LCoS, and Ferroelectric LCoS), By Product (Head-mounted Display, Projector, and Head-up Display), and By Region - Global and Regional Industry Overview, Market Intelligence, Comprehensive Analysis, Historical Data, and Forecasts 2022 – 2028."into their research database.

Liquid crystal on silicon display is developed with the help of a liquid crystal layer placed in between a thin film transistor and a silicon semiconductor with reflective coatings. These displays are highly utilized in projectors. Liquid crystal display is an innovative technology that makes use of liquid crystals for display purposes. These silicones find a wide number of applications in different end-user sectors like entertainment, medical, defense, and automation. Touch display facilitates a very fine quality output. However, these liquid crystals on silicon have massively revolutionized the current market landscape as plasma and cathode ray tube technology is largely being replaced by the digital light processing liquid crystal on silicon and liquid crystal display technologies. LCoS offers high contrast and resolution ratios. They deliver more accurate results when compared to DLP and LCD.

Get a Free Sample Report with All Related Graphs & Charts (with COVID 19 Impact Analysis):https://www.zionmarketresearch.com/sample/liquid-crystal-on-silicon-market

Liquid crystal on silicon refers to the miniaturized reflective active-matrix liquid crystal display. LCoS was typically designed for projectors, but it is now used for a wide range of applications like optical pulse shaping, near-eye displays, structured illumination, and wavelength selective switching. Some LCD projectors utilize transmissive LCDs that permit light to get through the liquid crystal. The LCoS products offer high quality and more precise results than are not provided by any other technology. Some of the major products based on this technology include microscopy SLM, head-up display, head-mounted display, and many more.

The global liquid crystal on silicon (LCoS) market is likely to spur exponentially in the forthcoming years due to the growing demand for projectors in different areas like education and others. Additionally, the inclusion of fun learning in the education curriculum is likely to further expand the scope of liquid crystals on silicon displays. Educating children with the help of video lectures and examples is on the rise, which in turn is very beneficial for the liquid crystal on silicon display market. The growing inclination of people towards the sport and cultural events globally is further accentuating the demand for projectors in the market. However, the demand for advanced projects like Pico is expected to drive the market. Its high compatibility with a wide range of products is of immense importance to manufacturers. However, the different advantages of liquid crystal on silicon over other computing technologies are also increasing its adoption rate. The supreme technology of silicon, like ruggedness and better equality, are among the leading growth drivers.

The growing deployment of liquid crystal on silicon technology in aviation space is likely to offer lucrative growth opportunities in the global liquid crystal on silicon (LCoS) market in the forthcoming years. Additionally, the government in several regions is investing heavily to strengthen its aviation sector. Therefore, it is expected to generate huge revenue in the forthcoming years.

Key Industry Insights & Finding of the Liquid Crystal on Silicon (LCoS) Market Reports:As per the analysis shared by our research analyst, the Liquid Crystal on Silicon (LCoS) Market is expected to grow annually at a CAGR of around 7.2% (2022-2028).

Through the primary research, it was established that the Liquid Crystal on Silicon (LCoS) Market was valued approximately USD 1.6 billion in 2021 and is projected to reach to roughly USD 2.9 billion by 2028.

On the basis of Asia Pacific accounts for the largest share in the global liquid crystal on silicon (LCoS) market due to the presence of growing economies like China, India, and Japan.

Companies CoveredHoloeye Systems Inc., Guangzhou Weijie Electronic Technology Co. Ltd., Citizen Finetech Miyota Co. Ltd., Forth Dimension Displays Ltd., Aaxa Technologies, Canon Inc., Shenzhen Coolux Science & Technology Co. Ltd., Sony Corporation, Siliconmicrodisplay Inc., Himax Display Inc., JVC Kenwood Corporation, LG Electronics, Microvision Inc., and pioneer corporation.

Recent Developments:Syndiant Inc. in January 2019 announced optical engine platforms and 1080p & 4K UHD LCOS microdisplays at the 2019 Consumer Electronics Show in Las Vegas, Nevada.

Asia Pacific accounts for the largest share in the global liquid crystal on silicon (LCoS) market due to the presence of growing economies like China, India, and Japan.

Asia Pacific accounts for the largest share in the global liquid crystal on silicon (LCoS) market due to the presence of growing economies like China, India, and Japan. Furthermore, the growing disposable income of people in the region is further likely to complement the growth of the regional market. Consumer"s lifestyle in the region is changing massively. People in the region are highly adopting new technology owing to their rising living standards. Additionally, the growing penetration of electronic goods in the middle-class sector in the region is likely to further expand the scope of the regional market in the forthcoming years.

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A template-free fabrication method for silicon nanostructures, such as silicon micropillar (MP)/nanowire (NW) composite structure is presented. Utilizing an improved metal-assisted electroless etching (MAEE) of silicon in KMnO4/AgNO3/HF solution and silicon composite nanostructure of the long MPs erected in the short NWs arrays were generated on the silicon substrate. The morphology evolution of the MP/NW composite nanostructure and the role of self-growing K2SiF6 particles as the templates during the MAEE process were investigated in detail. Meanwhile, a fabrication mechanism based on the etching of silver nanoparticles (catalyzed) and the masking of K2SiF6 particles is proposed, which gives guidance for fabricating different silicon nanostructures, such as NW and MP arrays. This one-step method provides a simple and cost-effective way to fabricate silicon nanostructures.

Silicon nanostructures, including silicon nanohole, silicon nanowire, and silicon nanopillar, have attracted wide attention due to their potential in various fields of application, such as solar cells [1-3], lithium batteries [4], insulator transistors [5], and gas and chemical sensors [6,7]. In particular, silicon micropillar (MP)/nanowire (NW) composite structure becomes more interesting recently due to its excellent light trapping and efficient carrier collection, which is applied to design and construct high performance radial p-n junction solar cells [8,9]. At present, the effective fabrication method for silicon MP/NW structure is the wet or dry etching of silicon substrate combined with various templates, such as silica dot array [8] and circular-shaped photoresist dots [9,10]. However, the use of these templates increases the fabrication cost and also makes the manufacturing process complicated. Therefore, searching a simple and cost-effective fabrication approach for silicon MP/NW structure is necessary.

Recently, K2SiF6 crystallites have been observed during the different wetting etchings of silicon substrate in the presence of HF and K+ ions, such as chemomechanical polishing [11], stain etching [12], laser-assisted etching [13], and metal-assisted electroless etching (MAEE) [14,15]. These K2SiF6 crystallites are insoluble in dilute HF solution and to some extent can prevent the etchant solution from the contact with silicon surface. Therefore, K2SiF6 crystallites offer a possible mask approach to selectively remove silicon materials. Previous studies focus on the effect of K2SiF6 crystallites on the formation of porous silicon and its photoluminescence property, but utilizing K2SiF6 as a template to fabricate silicon nanostructures has not been studied.

In this work, a template-free fabrication method for silicon MP/NW structure is presented. By utilizing an improved MAEE of silicon in KMnO4/AgNO3/HF solution, silicon MP/NW structure was achieved under the mask of self-growing K2SiF6 particles. This simple one-step fabrication method integrates the masking process and the etching process, avoiding conventional masking procedures, which provide a simple and cost-effective route to fabricate silicon nanostructures.

In these experiments, p-type Si(100) wafers with a resistivity around 7 to 13 Ω·cm were used. The wafer was cut into 1.5 × 1.5 cm2 pieces and used as test samples. Silicon samples were ultrasonically cleaned in acetone, absolute alcohol, and deionized water successively. Then, the cleaned Si samples were dipped into dilute HF solution to remove native oxide. Following the cleaning step, the etching process was performed through immersing the silicon samples into the etchant solution, which contains 5 M HF, 0.02 M AgNO3, and KMnO4 with different concentrations. The reaction time varied from 15 to 90 min. After etching process, Si samples were rinsed with deionized water and then immersed into the concentrated HNO3 to remove the retaining silver and other residue. All treatments were performed at room temperature.

The morphologies of the silicon nanostructures were observed by the scanning electron microscope (SEM) with FEI Quanta 200 F (FEI Company, OR, USA). Crystals covered on the Si samples were analyzed using the energy dispersive X-ray (EDX), and X-ray diffraction (XRD) by Bruker D8 Focus X-ray powder diffractometer (Bruker Corporation, MA, USA) with Cu Kα radiation (λ = 1.5406 Å).

K2SiF6 crystallite, spontaneously generating when the solubility product of K2SiF6 exceeded to 6.3 × 10−7 mol3dm−9, is a byproduct during the forming process of porous silicon [11]. Hadjersi et al. reported that an insoluble solid-phase film (K2SiF6) covered the top of porous silicon layer by the etching of silicon-coated silver film in HF-oxidizing solution [14]. Also, the existence of K2SiF6 layer causes the decrease of the etching rate of silicon [16]. These results demonstrated that K2SiF6 has an ability to form a masking layer during MACE process. Based on these, an improved MACE approach, integrating three processes (including the deposition of catalyzed silver nanoparticles (NPs), the formation of K2SiF6 mask, and the electroless etching of silicon) was utilized to realize one-step fabrication of silicon nanostructures.

Using this thinking, through a systematic process optimization, the silicon MP/NW composite structure was achieved by the simple template-free method. Figure 1 shows the silicon nanostructure obtained with the etching solution containing 4.6 M HF, 0.02 M AgNO3, and 0.05 M KMnO4. Both micropillars and nanowires can be observed on the whole silicon substrate, and every pillar is surrounded by the silicon NWs array closely, implying that the silicon MP/NW composite nanostructure can be realized by the one-step etching process. Meanwhile, we found that, in the silicon MP/NW composite structure, there are a lot of obvious differences between MPs and NWs. Firstly, the distribution of the silicon MPs is discrete and heterogeneous, whereas that of NWs is dense and homogeneous (as shown in Figure 1a). Secondly, the length of MPs and NWs is also quite different, that is, 13.5 μm for MPs and 8.4 μm for NWs (as shown in Figure 1b). Furthermore, the shape of these silicon MPs is approximately circular, and the diameter is in a range from several micrometers to dozens of micrometers, which is much larger than the diameter of 30 to 300 nm for the silicon NWs. Compared to the single type of silicon nanostructures (i.e., the thick cylindrical nanopillars and the order nanowires array) prepared by conventional etching process [17-19], the differences of the characteristics suggest that the formation process of the silicon MP/NW composite structure is complicated significantly.

SEM images of silicon MP/NW structure. (a) Plane-view and (b) cross-sectional SEM images of silicon MP/NW structure obtained from the etching of silicon in the solution containing 4.6 M HF, 0.02 M AgNO3, and 0.05 M KMnO4 for 45 min.

To disclose the formation process of silicon MP/NW composite structure in the HF/AgNO3/KMnO4 solution clearly, the morphology evolution on the surface of etched silicon with reaction time was investigated. At initial stage of the chemical etching reaction (less than 15 min), the silicon MPs and few silicon NWs were observed on silicon substrate, as shown in Figure 2a. Then, as reaction time increase, the length of MPs gradually increases and NWs with a short length closely generate around these MPs, as shown in Figure 2b. Meanwhile, MPs are lightly etched at their top surface and sidewalls. With the further increasing of reaction time, the lengths of the silicon MPs and the silicon NWs continually increase, whereas the silicon MPs were etched significantly on their sidewalls, resulting in the damage of the silicon MPs (as shown in Figure 2c). These results indicate that the formation of the silicon MPs is prior to the formation of the silicon NWs. Therefore, to get the silicon MP/NW composite structure, there should be a suitable range of the reaction time.

Cross-sectional SEM images. Silicon samples are etched in the solution containing 4.6 M HF, 0.02 M AgNO3, and 0.05 M KMnO4 for different reaction times. (a) 15 min; (b) 45 min; (c) 90 min.

The simultaneous emergence of the silicon MPs and the silicon NWs on silicon substrate here must be associated with the etching in the case of using the mask. In this work, K2SiF6 crystalline formed during the etching process should be the most possible template, so its existence and role in the formation process of silicon MP/NW structure were investigated systematically. Figure 3 displays the morphology and the chemical composition of the gray layer covering on the surface of silicon samples without removing residue on the silicon surface by HNO3 just after the etching process. From Figure 3a, it can be seen that the top surface of the silicon substrate is covered by a layer of loose silver dendrites, which plays an important role on the formation of NW array [20]. After the removal of silver dendrites by the rinse of deionized water, a number of spherical-shaped particles were clearly observed on silicon substrate, as shown in Figure 3b. The analysis of EDX spectrum displays that the main components of these particles are potassium (K), silicon (Si), fluorine (F), and silver (Ag) (Figure 3c). Furthermore, as shown in Figure 3d, the diffraction peaks from XRD spectra are in agreement with the characteristic peaks of K2SiF6 reported by Hadjersi [15] and Loehlin et al. [21] (Figure 3d). These results confirm that these particles are composite of K2SiF6. Notably, we can see that these K2SiF6 particles are about dozens of micrometers in diameter, which is in accordance with the diameter of the silicon MPs. It implies that K2SiF6 particles spontaneously form the templates during the etching process, further leading to the formation of the silicon MPs.

Surface morphology. The silicon sample etched in the solution containing 4.6 M HF, 0.02 M AgNO3, and 0.05 M KMnO4 for 45 min (a) before cleaning by deionized water and (b) after cleaning by deionized water. (c) EDX spectrum and (d) XRD spectra corresponding to (b), respectively.

Based on the above analyses, a formation mechanism of the silicon MP/NW composite nanostructure through the one-step etching in HF/AgNO3/KMnO4 solution was proposed. First of all, when the silicon wafer was immersed into the HF/AgNO3/KMnO4 solution, many Ag NPs deposit on silicon substrate via the electroless deposition process (as described in Figure 4A), forming a number of nanoscale electrochemical cells at Ag NPs/Si areas [18]. These Ag NPs act as reaction cathodes, while the silicon areas underneath Ag NPs act as reaction anodes. At reaction cathodes, besides the reductive deposition of silver, MnO4− reacts with H+ ions and generates a large number of holes, which inject into the silicon with a mediate of Ag NPs. The reaction equation is described as follows:

Meanwhile, at reaction anodes, silicon areas injected by holes are oxidized and further dissolved in HF solution, causing the formation of SiF4, which can be easily hydrolyzed to SiF62−. The reaction equation is written as follows:

At initial stage of etching, since the standard reduction potential of MnO4− (1.51 eV) is larger than that of Ag (0.78 eV) [22], injected holes are provided mainly from S2. As the reactions (S2 and S3) continuously proceed, the concentration of SiF62− increases gradually. When the concentration of SiF62− is accumulated sufficiently, K2SiF6 can heterogeneously nucleate at the silicon surface and grow up to K2SiF6 particles, covering dense silver NPs (as described in Figure 4B). So, K2SiF6 particles shelter parts of Ag NPs and further prevent the etchant solution from the contact with Ag NPs. It is difficult for hole injection from Ag NPs to silicon areas covered by K2SiF6 particles. At the same time, at the areas of silicon surface without K2SiF6 particles, silicon is still subjected to the etching assisted by the catalysis of Ag NPs. Therefore, the silicon under K2SiF6 particles was retained, while the silicon not covered with K2SiF6 particles was etched away, leading to micropillar structure on the silicon substrate. As the reaction continuously performs, the concentration of MnO4− in the solution is reducing; injected holes are provided mainly by S1. On the surface of silicon without K2SiF6 particles covered, nanowire array form closely around micropillars and simultaneously accompanied the deposition of silver dendrites (as described in Figure 4C), which is clearly illustrated by the formation model of SiNW array in HF/AgNO3 solution [2,23]. Finally, the silicon MP/NW composite structure was obtained after the cleaning by HNO3, as described in Figure 4D.

According to experimental results and mechanism analysis, it can be seen that utilizing K2SiF6 particles as a template to fabricate the silicon MP/NW composite structure is a feasible method. If the size and the amount of K2SiF6 particles formed on silicon substrate could be controlled, this simple fabrication method for the silicon nanostructures will have greater practical application value. Thus, many process parameters such as KMnO4 concentration, the type of silicon wafer, and reaction temperature were adjusted to modulate the homogeneous distribution of K2SiF6 particles and to prepare different silicon nanostructures. For example, ordered silicon nanowire arrays were achieved at low concentration of KMnO4 (i.e., 0.005 M), as shown in Figure 5a. Moreover, uniform silicon pillar array was also achieved when silicon wafer with small resistivity (i.e., 3 to 5 Ω·cm) was etched in the same solution, as shown in Figure 5b. Thus, this simple fabrication process will be an effective approach to fabricate a variety of silicon nanostructures.

Cross-sectional SEM images of silicon samples. (a) Etched in the solution containing 4.6 M HF, 0.02 M AgNO3, and 0.005 M KMnO4 for 45 min. (b) Cross-sectional SEM images of n-Si(100) with the resistivity of 3 cmto 5 Ω·cm etched in the solution containing 4.6 M HF, 0.02 M AgNO3, and 0.05 M KMnO4 for 45 min.

A simple fabrication method integrating the masking process of K2SiF6 particles and the silver-assisted electroless etching process is presented to fabricate silicon nanostructures. Using this method, silicon MP/NW composite structure was successfully fabricated, and their lengths can be controlled by adjusting reaction parameters. By the observation of EDX and XRD, it is demonstrated that the electroless etching under the mask of K2SiF6 particles causes the formation of silicon MP/NW structure. Further, a formation mechanism of the silicon MP/NW composite structure in KMnO4/AgNO3/HF solution was proposed. Based on these, different silicon nanostructures such as nanowire and pillar arrays can also be achieved by adjusting the size and distribution of K2SiF6 particles.

FB, a Ph.D. candidate, is under the supervisory of Prof. ML. He obtained his masters degree at the Wuhan University of Technology in 2010. At present, his research interests are as follows: silicon-based solar cells, fabrication of large-areas graphene, and light trapping silicon surface structure. ML is a professor in Renewable Energy and Clean Energy. He is the director of New Energy Materials and PV Technology Center, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources. He worked in the University of Cambridge as a research fellow from 2004 to 2006. His expertise is in the fields of design and fabrication of energy materials, functional micro-nanostructures, and energy conversion devices.

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Liquid crystal on silicon (LCoS or LCOS) is a miniaturized reflective active-matrix liquid-crystal display or "microdisplay" using a liquid crystal layer on top of a silicon backplane. It is also referred to as a spatial light modulator. LCoS was initially developed for projection televisions but is now used for wavelength selective switching, structured illumination, near-eye displays and optical pulse shaping. By way of comparison, some LCD projectors use transmissive LCD, allowing light to pass through the liquid crystal.

In an LCoS display, a CMOS chip controls the voltage on square reflective aluminium electrodes buried just below the chip surface, each controlling one pixel. For example, a chip with XGA resolution will have 1024x768 plates, each with an independently addressable voltage. Typical cells are about 1–3 centimeters square and about 2 mm thick, with pixel pitch as small as 2.79 μm.

At the 2004 CES, Intel announced plans for the large scale production of inexpensive LCoS chips for use in flat panel displays. These plans were cancelled in October 2004. Sony has made it to market (December 2005) with the Sony-VPL-VW100 or "Ruby" projector, using SXRD, 3 LCoS chips each with a native resolution of 1920×1080, with a stated contrast ratio of 15,000:1 using a dynamic iris.

Whilst LCoS technology was initially touted as a technology to enable large-screen, high-definition, rear-projection televisions with very high picture quality at relatively low cost, the development of large-screen LCD and plasma flat panel displays obsoleted rear projection televisions. As of October 2013, LCoS-based rear-projection televisions are no longer produced.

Commercial implementations of LCoS technology include Sony"s Silicon X-tal Reflective Display (SXRD) and JVC"s Digital Direct Drive Image Light Amplifier (D-ILA/). Every company which produces and markets LCoS rear-projection televisions uses three-panel LCoS technology,

Developers and manufacturers who have left the LCoS imaging market include: Intel, Philips, MicroDisplay Corporation (the only company to successfully bring to market a single-panel LCoS televisionSyntax-Brillian.

There are two broad categories of LCoS displays: three-panel and single-panel. In three-panel designs, there is one display chip per color, and the images are combined optically. In single-panel designs, one display chip shows the red, green, and blue components in succession with the observer"s eyes relied upon to combine the color stream. As each color is presented, a color wheel (or an RGB LED array) illuminates the display with only red, green or blue light. If the frequency of the color fields is lower than about 540 Hz

Both Toshiba"s and Intel"s single-panel LCOS display program were discontinued in 2004 before any units reached final-stage prototype.Philips and one by Microdisplay Corporation. Forth Dimension Displays continues to offer a Ferroelectric LCoS display technology (known as Time Domain Imaging) available in QXGA, SXGA and WXGA resolutions which today is used for high resolution near-eye applications such as Training & Simulation, structured light pattern projection for AOI. Citizen Finedevice (CFD) also continues to manufacturer single panel RGB displays using FLCoS technology (Ferroelectric Liquid Crystals). They manufacture displays in multiple resolutions and sizes that are currently used in pico-projectors, electronic viewfinders for high end digital cameras, and head-mounted displays.

Whilst initially developed for large-screen projectors, LCoS displays have found a consumer niche in the area of pico-projectors, where their small size and low power consumption are well-matched to the constraints of such devices.

LCoS devices are also used in near-eye applications such as electronic viewfinders for digital cameras, film cameras, and head-mounted displays (HMDs). These devices are made using ferroelectric liquid crystals (so the technology is named FLCoS) which are inherently faster than other types of liquid crystals to produce high quality images.

At CES 2018, Hong Kong Applied Science and Technology Research Institute Company Limited (ASTRI) and OmniVision showcased a reference design for a wireless augmented reality headset that could achieve 60 degree field of view (FoV). It combined a single-chip 1080p LCOS display and image sensor from OmniVision with ASTRI"s optics and electronics. The headset is said to be smaller and lighter than others because of its single-chip design with integrated driver and memory buffer.

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According to Apple rumormonger Mark Gurman, Apple is working on not one, not two, but several new monitors. After a years-long drought in the Apple displays department, this kind of revelation gets the imagination going. One of these will be an update to the current high-end 32-inch Pro Display XDR, but other than that, we can only speculate. So, speculate we shall!

"It"s possible that Apple may incorporate some of the technologies it has developed for its iPhone and other devices into its new external monitors with Apple Silicon. For example, the company could potentially include support for AirPlay, which allows users to wirelessly stream audio and video content from their Apple devices to an AirPlay-compatible display." professional photographer and photography blogger Bikram Pachhai told Lifewire via email.

One detail that Gurman has gleaned about these new displays is that they will "include Apple Silicon." The current Apple Studio Display already does this, using the A13 Bionic chip usually found in the iPhone 11 and some 2019-era iPads. In the case of the Studio Display, the chip is used to power the camera, enabling Center Stage (the feature that pans the camera as you move), Spatial Audio, and Hey Siri.

"The A13 is there to support the ancillary items that third-party displays do not offer (Center Stage, Spatial Audio, "Hey Siri"), and I imagine Apple sees all of it as a "value add,"" said Apple fan and user C Wallace in a MacRumors forum thread. "As such, I am not surprised Apple is said to be doing the same with the next set of displays they are developing,"

How about building in an Apple TV? That also runs on an old A-series iPhone chip and having a display that can also act as a standalone TV makes total sense.

Speaking of which, how about adding AirPlay? The Studio Display already has six speakers for what Apple calls "cinematic sound," so why not let us stream video from our devices over wi-fi? You can already hook up an iPad to the Studio Display with a USB-C cable, but it would be much easier if it could just show up as an AirPlay destination for video and music streaming.

Gurman mentioned a sequel to the Pro Display XDR, Apple"s $5K display that comes without a stand. It"s an amazing 32-inch 6K monitor, but in some ways, it is behind the newer Studio Display. The high-end model doesn"t have speakers, a microphone, or a camera, for example, and the newer Studio Display is brighter when not viewing HDR movies and photos.

A new Pro Display XDR could be improved with mini-LED backlights like in the current 14- and 16-inch MacBook Pros, along with those models" Pro Motion tech, which can vary the screen"s refresh rate to save power or run at an ultra-smooth 120Hz.

Finally, how about touch screens? Apple makes amazing multitouch displays for the iPhone and iPad. Why not make a touch-sensitive display? And while we’re fantasizing, how about a huge touch-screen display set at a low angle like a drawing desk? The Mac might not be suited to touch input, but hook up an iPad Pro, and you could run a photo-editing app or a drawing and pinging app like Procreate on that vast canvas. Add in Apple Pencil support, and Apple would probably sell a few of them.

Complex shapes of silicone rubber consisting of different properties such as conductive and non-conductive segments, or color coding. Specifically custom designed to eliminate multiple extruded components by combining different elements into one unitized design.

In a VAN device, the dielectric anisotropy of the LC is negative. The incident linear polarization is set at 45° with respect to the orientation of the LC materials, and the analyzer is oriented at 90° with respect to the polarizer. The preferred direction of LC molecules is aligned perpendicular to the surface of the alignment layer and results in no rotation of the polarization. With crossed polarizers, a wide wavelength range of the light is completely blocked, resulting in a dark ‘black level’ and therefore high contrast ratio (Figure 5). Thus, the VAN is widely used in displays. However, this is no advantage in phase-only LCOS devices because the contrast ratio can be achieved depending on the phase modulation of the incident light. Furthermore, the magnitude of dielectric anisotropy is usually smaller for the negative ones than that of the positive ones. Therefore, a phase-only LCOS device using a VAN configuration will have a slow response time and a high threshold voltage.

OCB (pi-cell) might be a candidate for phase-only LCOS devices in the future due to its faster response; however, currently, there are several issues, such as the high pre-tilt angle requirement, unwanted twist state during switching and high-temperature surface treatment. Furthermore, in a pi-cell, the voltage for overcoming the threshold must be much larger than the critical voltage such that the LC can be deformed from the splay state to the bend state, which necessitates a much higher effective threshold in a pi-cell than in an anti-parallel alignment rubbed device. This requirement is a problem when using smaller pixels and the relatively low maximum voltages that are available from current silicon backplanes. However, for pi-cells, the voltage can be reduced by increasing the dielectric anisotropy or using a low anchoring energy or high pre-tilt alignment.